ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

1985 ◽  
Vol 56 ◽  
Author(s):  
Y. Shinoda ◽  
Y. Ohmachi
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Etching ◽  
Domain Structures ◽  
Homoepitaxial Layers

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

2011 ◽  
Vol 32 (9) ◽  
pp. 896-901 ◽  
Author(s):  
陈耀 CHEN Yao ◽  
王文新 WANG Wen-xin ◽  
黎艳 LI Yan ◽  
江洋 JIANG Yang ◽  
徐培强 XU Pei-qiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Metalorganic Chemical
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