The Valence Electronic Structure of N-Doped P-Sexiphenyl

1999 ◽  
Vol 561 ◽  
Author(s):  
U. Theissl ◽  
E.J.W. List ◽  
N. Koch ◽  
A. Vollmer ◽  
S. Schrader ◽  
...  

ABSTRACTThin films of p-sexiphenyl (6P) were doped with increasing amounts of potassium in situ, and the change in the valence electronic structure of 6P upon the alkali metal deposition was followed with ultraviolet photoelectron spectroscopy. We observe the evolution of new intragap emissions, which are attributed to the formation of bipolarons, even for very low doping concentrations. The low binding energy intra-gap emission exhibits a pronounced asymmetric lineshape, in contrast to the findings when cesium is used as dopant. In order to investigate whether this lineshape is due to different emissive electronic species in the bulk and on the surface of the 6P film the take-off angle for the photoelectrons was varied. As no change in the lineshape is found when going from normal to near-grazing emission we can exclude that charged 6P molecules in the bulk and on the surface yield different valence electronic spectra. Therefore, the characteristic lineshape of the low binding energy emission is proposed to be related to the interaction of the doped organic molecule with the different counterions.

2012 ◽  
Vol 24 (7) ◽  
pp. 901-905 ◽  
Author(s):  
Steffen Duhm ◽  
Qian Xin ◽  
Shunsuke Hosoumi ◽  
Hirohiko Fukagawa ◽  
Kazushi Sato ◽  
...  

1999 ◽  
Vol 593 ◽  
Author(s):  
M. Töwe ◽  
P. Reinke ◽  
P. Oelhafen

ABSTRACTAmorphous hydrogen-free carbon films (sp2-dominated a-C) were deposited under ultrahigh vacuum conditions between room temperature and 800°C. These films served as matrices for the in-situ incorporation of alkali-metal atoms (Li, Na). In-situ sample characterization was performed by photoelectron spectroscopy with both x-ray and ultraviolet excitation (XPS, UPS). While the clean metal-containing samples were prepared with metal contents of about 10 at%, a strong oxidation driven accumulation of metal atoms on the film surface exceeding 50 at% was observed upon exposure to molecular oxygen. Work-function measurements by UPS reflected the changes within the electronic structure of the material. Metal incorporation considerably decreased the work-function, but only after oxidation we observed work-functions below the values given for pure alkali metals.


2021 ◽  
pp. 150898
Author(s):  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Shigenori Ueda ◽  
Tohru Higuchi ◽  
Kazuya Terabe

1984 ◽  
Vol 32 ◽  
Author(s):  
Carlo G. Pantano ◽  
C. A. Houser ◽  
R. K. Brow

ABSTRACTThe application of surface analysis techniques to the characterization of sol/gel surfaces and thin films is described. Secondary-ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS) and sputter-induced photon spectroscopy (SIPS) are used to measure the composition of multicomponent silicate films, the relative water content of alumina films, the nitrogen content of ammonia treated silica films, and the depth profiles for films on black chrome. The determination of chemical structure using XPS and SIMS is also discussed. Finally, a brief introduction to temperature-programmed desorption (TPD) and its potential for studying surface chemical reactions, in situ, is presented.


1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.


Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.


2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.


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