In situ Hard X-ray Photoelectron Spectroscopy on the Origin of Irreversibility in Electrochromic LixWO3 Thin Films

2021 ◽  
pp. 150898
Author(s):  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Shigenori Ueda ◽  
Tohru Higuchi ◽  
Kazuya Terabe
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray

In situ effect of heat treatment on X-ray photoelectron spectroscopy of Cd2SnO4 thin films

1993 ◽  
Vol 139 (2) ◽  
pp. K101-K103
Author(s):  
W. L. Wang ◽  
K. J. Liao ◽  
B. Zhang ◽  
D. L. Peng
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Photoelectron Spectroscopy ◽  
X Ray

New approach in the monitoring and characterization of titanium nitride thin films

1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ex Situ ◽  
New Approach ◽  
X Ray ◽  
Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

scholarly journals The in situ synthesis of PbS nanocrystals from lead(II) n -octylxanthate within a 1,3-diisopropenylbenzene–bisphenol A dimethacrylate sulfur copolymer

2017 ◽  
Vol 4 (8) ◽  
pp. 170383 ◽  
Author(s):  
P. D. McNaughter ◽  
J. C. Bear ◽  
A. G. Mayes ◽  
I. P. Parkin ◽  
P. O'Brien
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Polymer Thin Film ◽  
X Ray ◽  
Pbs Nanocrystals ◽  
Nanocrystal Synthesis ◽  
New Generation

The synthesis of lead sulfide nanocrystals within a solution processable sulfur ‘inverse vulcanization’ polymer thin film matrix was achieved from the in situ thermal decomposition of lead(II) n -octylxanthate, [Pb(S 2 COOct) 2 ]. The growth of nanocrystals within polymer thin films from single-source precursors offers a faster route to networks of nanocrystals within polymers when compared with ex situ routes. The ‘inverse vulcanization’ sulfur polymer described herein contains a hybrid linker system which demonstrates high solubility in organic solvents, allowing solution processing of the sulfur-based polymer, ideal for the formation of thin films. The process of nanocrystal synthesis within sulfur films was optimized by observing nanocrystal formation by X-ray photoelectron spectroscopy and X-ray diffraction. Examination of the film morphology by scanning electron microscopy showed that beyond a certain precursor concentration the nanocrystals formed were not only within the film but also on the surface suggesting a loading limit within the polymer. We envisage this material could be used as the basis of a new generation of materials where solution processed sulfur polymers act as an alternative to traditional polymers.

Stress Relaxation in Sandwiched Si3N4/Al/Si3N4 Thin Films

2010 ◽  
Vol 89-91 ◽  
pp. 91-96
Author(s):  
G.R. Chang ◽  
Fei Ma ◽  
B. Ma ◽  
Ke Wei Xu
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Photoelectron Spectroscopy ◽  
Annealing Process ◽  
Sharp Rise ◽  
X Ray ◽  
Curvature Measurement ◽  
In Situ Investigation ◽  
Scanning Electron

An in-situ investigation was performed on the stress relaxation of sandwiched Si3N4/Al/Si3N4 thin films by using multi-beam optical stress sensor (MOSS), a developed technique for substrate curvature measurement. Furthermore, the microstructures of the thin films were characterized by several analyzing techniques, such as X-ray Photoelectron Spectroscopy (XPS), Field Emission Scanning Electron Microscope (FE-SEM) and X-ray energy dispersive spectroscopy (EDS). The results indicated sharp rise and drop of the residual stress due to the cracks of Si3N4 surface layer or the separation of Al particles during annealing process. An appropriate model was suggested to interpret this phenomenon.

Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

2010 ◽  
Vol 518 (18) ◽  
pp. 5173-5176 ◽  
Author(s):  
J.N. Beukers ◽  
J.E. Kleibeuker ◽  
G. Koster ◽  
D.H.A. Blank ◽  
G. Rijnders ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray

Ion versus neutral irradiation of thin films of amorphous SiO2: an in situ X-ray photoelectron spectroscopy study

1996 ◽  
Vol 116 (1-4) ◽  
pp. 342-346 ◽  
Author(s):  
Alberto Torrisi ◽  
Antonino Licciardello ◽  
Valentina Ancarani ◽  
Massimiliano Cantiano ◽  
Orazio Puglisi
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
Amorphous Sio2 ◽  
X Ray

Fabrication and in situ X-ray photoelectron spectroscopy of granular metal thin films

1991 ◽  
Vol 206 (1-2) ◽  
pp. 264-268 ◽  
Author(s):  
S.I. Shah ◽  
B.A. Doele ◽  
I. Weerasekera ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Metal Thin Films ◽  
X Ray

‘In-situ’ Solution Processed Room Temperature Ferromagnetic MgO Thin Films Printed by Inkjet Technique

2011 ◽  
Vol 1292 ◽  
Author(s):  
Yan Wu ◽  
Yiqiang Zhan ◽  
Mats Fahlman ◽  
Mei Fang ◽  
K. V. Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Solution Processed ◽  
X Ray ◽  
Si Substrates ◽  
Ph Values

ABSTRACTWe report on ‘in-situ’ solution processed homogeneous (200) oriented MgO ~85nm thin films deposited on Si substrates by inkjet printing. These films are found to show ferromagnetic order beyond room temperature with a saturation magnetization MS as high as ~0.63 emu/g. X-ray photoelectron spectroscopy investigations show the absence of any possible contamination effects, while the Mg 2p, and O 1s spectra indicate that the role of defect structure at the Mg site is important in the observed magnetism. By controlling the pH values of the precursors the concentration of the defects can be varied and hence tune the magnetization at room temperature. The origin of magnetism in these MgO thin films appears to arise from the cation vacancies.

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