Thermal stability of Ni monosilicide formed with Ti capping layer

2004 ◽  
Author(s):  
Soo-Jin Park ◽  
Keun-Woo Lee ◽  
Jung-Joo You ◽  
Ju-Youn Kim ◽  
Kyoo-Sik Bae
Keyword(s):  
Thermal Stability ◽  
Capping Layer ◽  
Thermal Stability Of ◽  
Ti Capping Layer

The influence of Ti and TiN on the thermal stability of CoSi2.

2001 ◽  
Vol 670 ◽  
Author(s):  
C. Detavernier ◽  
Guo-Ping Ru ◽  
R.L. Van Meirhaeghe ◽  
K. Maex
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Surface Roughness ◽  
Thermal Stress ◽  
Grain Boundary ◽  
Multilayer Structures ◽  
Strong Increase ◽  
Capping Layer ◽  
Thermal Stability Of ◽  
Ti Capping Layer

ABSTRACTIn this work, AFM and sheet resistance measurements are used to characterize the thermal stability of thin CoSi2 films. We were particularly interested in the influence of different multilayer structures on the topography and surface roughness. Four different multilayer structures (Co/Si, TiN/Co/Si, Ti/Co/Si and Co/Ti/Si) were investigated. Thermal degradation of CoSi2 formed from a standard Co/Si structure is found to have an activation energy of about 4.2 eV, independent of layer thickness (in agreement with previous results by Alberti et al.). A TiN capping layer is shown to improve the thermal stability. However, if the TiN layer is too thick (e.g. 50 nm), a new failure mode is observed: although the TiN prevents grain boundary grooving of the silicide, the thermal stress induced by the TiN causes the CoSi2 layer to crack. For a Ti capping layer, a strong increase of the thermal stability of the CoSi2 layer is observed, even if the Ti capping layer is removed by a selective etching step after the first RTP annealing. The presence of a very thin Ti-O-N containing layer on the CoSi2surface seems to strongly decrease surface diffusion and in this way reduce the tendency for grain boundary grooving.

Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn
Keyword(s):  
Thermal Stability ◽  
Epitaxial Growth ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Film ◽  
Si Substrate ◽  
Capping Layer ◽  
Potential Applicability ◽  
Thermal Stability Of

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

Mechanisms for the enhancement of the thermal stability of organic thin films by aluminum oxide capping layers

2006 ◽  
Vol 21 (2) ◽  
pp. 455-464 ◽  
Author(s):  
S. Sellner ◽  
A. Gerlach ◽  
F. Schreiber ◽  
M. Kelsch ◽  
N. Kasper ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Aluminum Oxide ◽  
Elevated Temperatures ◽  
Organic Thin Films ◽  
Organic Films ◽  
Capping Layer ◽  
Ambient Gases ◽  
Complementary Techniques ◽  
Thermal Stability Of

We present a detailed study of the thermal stability of organic thin films of diindenoperylene encapsulated by sputtered aluminum oxide layers. We studied the influence of capping layer thickness, stoichiometry, and heating rate on the thermal stability of capped films and their eventual breakdown. Under optimized encapsulation conditions (thick and stoichiometric capping layer), the organic films desorb only at temperatures 200 °C above the desorption of the uncapped film. Moreover, the capped organic films retain their crystalline order at these elevated temperatures, whereas they would normally (i.e., uncapped) be in the gas phase. This study therefore also shows a way of studying organic materials under temperature conditions normally inaccessible. Considering results from complementary techniques, we discuss possible scenarios for the eventual breakdown. The results have implications for the performance and long-term stability of organic devices for which stability against elevated temperatures as well as against exposure to ambient gases is crucial.

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

2012 ◽  
Vol 52 (3) ◽  
pp. 357-363 ◽  
Author(s):  
Jae-Seong Park ◽  
Joon-Woo Jeon ◽  
Chang-Hyung Lee ◽  
Chang-Hoon Choi ◽  
Sungho Jin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Capping Layer ◽  
Thermal Stability Of

Thermal Stability of the TiSi2 Film Under the Dielectric Capping Layer

1993 ◽  
Vol 317 ◽  
Author(s):  
Y.W. Kim ◽  
N.I. Lee ◽  
S.T. Ahn
Keyword(s):  
Thermal Stability ◽  
Dielectric Film ◽  
Film Stress ◽  
High Temperature Annealing ◽  
Titanium Disilicide ◽  
Capping Layer ◽  
Diffusional Flow ◽  
The Difference ◽  
Anneal Temperature ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of titanium disilicide (TiSi2) film under dielectric capping layers was studied. Dielectric capping layers prevent changes in sheet resistance and the film stress of the TiSi2 film during annealing at 900°C. The enhancement of thermal stability of the TiSi2 film was dependent on the nature of dielectric; thermal stability of the TiSi2 film was enhanced more effectively by the plasma-enhanced silicon nitride (PE-SiN) capping layer rather than the undoped silicate glass (USG; S1O2) capping layer. The dependence of thermal stability of the TiSi2 film with the nature of dielectrics was due to the difference in stress of dielectrics at anneal temperature. At 900°C, stress of the USG film was nearly twice of that of the PE-SiN film. Agglomeration of the TiSi2 film under the dielectric capping layer at high temperature annealing can be explained by a diffusional flow of atoms called Nabarro-Herring Microcreep. As the size of Ti-polycide lines becomes smaller, the nature of the dielectric film on the TiSi2 film will be more important for achieving thermal stability.

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