HRTEM Study of the Interfacial Reactions of High-Temperature Sputtered Ti Thin Films on Preamorphized (001)Si

1999 ◽  
Vol 564 ◽  
Author(s):  
S. M Chang ◽  
H. Y Yang ◽  
H. Y Huang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Function Analysis ◽  
Interfacial Reactions ◽  
Simultaneous Presence ◽  
Auto Correlation ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Auto Correlation Function

AbstractInterfacial reactions of high-temperature sputtered Ti thin films on preamorphized (001)Si have been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. Simultaneous presence of multiphases was found to occur in the amorphous TiSix layer at the Ti/Si interface. The enhanced transformation of C54-TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the a-TiSix layer than that in samples deposited at room temperature.

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

2003 ◽  
Vol 212-213 ◽  
pp. 339-343 ◽  
Author(s):  
T.F. Chiang ◽  
W.W. Wu ◽  
S.L. Cheng ◽  
H.H. Lin ◽  
S.W. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Correlation Function ◽  
Function Analysis ◽  
Auto Correlation ◽  
Auto Correlation Function

The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates

1999 ◽  
Vol 564 ◽  
Author(s):  
S. L. Cheng ◽  
S. M. Chang ◽  
H. Y. Huang ◽  
Y. C. Peng ◽  
L. J. Chen ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Silicon Substrate ◽  
Function Analysis ◽  
Titanium Silicide ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Auto Correlation ◽  
Nucleation Sites ◽  
Auto Correlation Function ◽  
Ti Films

AbstractThe influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49- TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

Interfacial Reactions and Thermal Stability of Ultrahigh Vacuum Deposited Multilayered Mo/Si Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
J.M. Liang ◽  
L.J. Chen
Keyword(s):  
Thermal Stability ◽  
Function Analysis ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Silicide Phase ◽  
Transmission Electron ◽  
Bilayer Period ◽  
Auto Correlation Function ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTInterfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and auto–correlation function analysis. For samples with nominal atomic ratios Mo:Si = 1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si = 1:2 samples after annealing at 650 °C for 1 h.Multiphases were observed to form simultaneously in samples annealed at 400–500 °C. After 650 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si = 1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si = 3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period and annealing conditions. The results are interpreted in terms of the delicate balance between intermixing of constituent atoms and silicide formation.

Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
T.T. Lee ◽  
L.L. Chen
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTInterfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

scholarly journals Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

2007 ◽  
Vol 22 (1) ◽  
pp. 76-88
Author(s):  
Dashan Wang ◽  
James J. Tunney ◽  
Xiaomei Du ◽  
Michael L. Post ◽  
Raynald Gauvin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Interfacial Reactions ◽  
Silicon Substrates ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Microscopy Characterization ◽  
Silicon Diffusion

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

Local Structure and Er3+ Emission from Pseudo-Amorphous GaN:Er Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
S. B. Aldabergenova ◽  
M. Albrecht ◽  
A. A. Andreev ◽  
C. Inglefield ◽  
J. Viner ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Matrix ◽  
Broad Band ◽  
Resonant Absorption ◽  
Absorption Bands ◽  
Host Matrix ◽  
Transmission Electron ◽  
Infra Red ◽  
Band Edge Luminescence

AbstractWe report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15/2 transitions is greatly enhanced after annealing at 750°C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er3+ ions.The total photoluminescence spectrum consists of welldefined Er3+ luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

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