Local Structure and Er3+ Emission from Pseudo-Amorphous GaN:Er Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
S. B. Aldabergenova ◽  
M. Albrecht ◽  
A. A. Andreev ◽  
C. Inglefield ◽  
J. Viner ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Matrix ◽  
Broad Band ◽  
Resonant Absorption ◽  
Absorption Bands ◽  
Host Matrix ◽  
Transmission Electron ◽  
Infra Red ◽  
Band Edge Luminescence

AbstractWe report on strong Er3+ luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er3+ luminescence at 1.535 μm corresponding to 4I13/2 → 4I15/2 transitions is greatly enhanced after annealing at 750°C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er3+ ions.The total photoluminescence spectrum consists of welldefined Er3+ luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering

2007 ◽  
Vol 561-565 ◽  
pp. 1161-1164
Author(s):  
Xiao Na Li ◽  
Bing Hu ◽  
Chuang Dong ◽  
Xin Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Structural Evolution ◽  
Radio Frequency Magnetron Sputtering ◽  
Transmission Electron ◽  
Direct Band ◽  
The Stability ◽  
Sputtering System

Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

scholarly journals Surface Modified Ni Nanoparticles Produced by the Electrical Explosion of Wire

2015 ◽  
Vol 233-234 ◽  
pp. 513-516 ◽  
Author(s):  
A.P. Safronov ◽  
Galina V. Kurlyandskaya ◽  
S.M. Bhagat ◽  
I.V. Beketov ◽  
A.M. Murzakaev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrical Explosion ◽  
Resonant Absorption ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Average Size ◽  
Surface Modified ◽  
Made In

Spherical nickel nanoparticles were prepared by the electrical explosion of wire. The as-prepared nanoparticles were modified immediately after fabrication at room temperature in order to provide tunable surface properties with focus on the development of composites filled with nanoparticles. Following liquid modificators were used: hexane, toluene and the solution of polystyrene in toluene. In one case the surface modification by carbon was made in gas phase as a result of hydrocarbon injection. The average size of the nanoparticles was about 50 nm and unit cell parameters were close to 0.351 nm. Detailed characterization was done by X-ray diffraction, transmission electron microscopy, and magnetization measurements. Sphericity was also checked using microwave resonant absorption.

Luminescence from SiOx Nanoclusters

1994 ◽  
Vol 358 ◽  
Author(s):  
Paul wickboldt ◽  
Hyeonsik M. Cheong ◽  
Dawen Pang ◽  
Joseph H. Chen ◽  
William paul
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cluster Size ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Broad Band ◽  
Infrared Transmission ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Transmission Electron

ABSTRACTSiOx nanoclusters (7 nm to 17 nm) are produced by evaporation of SiO (or Si) in Ar (+O2) atmospheres. Room temperature photoluminescence (PL) measurements in vacuum reveal a broad band centered at 1.65 eV. Upon exposure to gas this PL band is extinguished in a matter of seconds, and another band centered at 2.12 eV appears. This effect occurs regardless of the gas used (He, Ar, N2, O2, H2O vapor or air) and is entirely reversible upon evacuation.Transmission electron microscopy (TEM), Raman, infrared transmission, and X-ray photoluminescence spectroscopy (XPS) measurements are used to characterize the clusters. They are noncrystalline, and the oxidation state is a suboxide rather than SiO2 The PL spectra are independent of cluster size. The PL does not occur without sufficient oxidation and does not require the presence of bonded hydrogen. We are led to speculate that the radiative recombination occurs in electron states derived from a suboxide.

scholarly journals Формирование интерметаллида Cu-=SUB=-6-=/SUB=-Sn-=SUB=-5-=/SUB=- в тонких пленках Cu/Sn

2021 ◽  
Vol 63 (12) ◽  
pp. 2205
Author(s):  
Л.Е. Быкова ◽  
С.М. Жарков ◽  
В.Г. Мягков ◽  
Ю.Ю. Балашов ◽  
Г.С. Патрин
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Room Temperature ◽  
Hexagonal Phase ◽  
Film Sample ◽  
Cu6sn5 Phase ◽  
Bilayer Films ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Diffraction Patterns

The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55nm)/Cu(30nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300 °C and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

Processing of rare earth doped GaN with ion beams

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
T. Wojtowicz ◽  
P. Ruterana ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Defects ◽  
Site Location ◽  
Transmission Electron ◽  
Infra Red ◽  
Optical Activation ◽  
Rare Earth Doped

ABSTRACTGaN epilayers grown by MOCVD were implanted with different fluences of thulium at room temperature and at 500 °C in order to find the optimum implantation conditions. Rutherford backscattering spectrometry in the channeling mode was used to monitor the damage evolution in the Ga-sublattice and to establish the lattice site location of the thulium ions. The nature of structural defects was studied with transmission electron microscopy and the optical properties of the samples with room temperature cathodoluminescence. The introduced damage could be significantly reduced by implantation at high temperature for fluences up to 5×1015 Tm/cm2. Annealing was necessary for optical activation of the implanted samples, in all cases. After annealing, sharp rare earth related emissions were observed in the blue and in the near infra-red spectral region.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

scholarly journals Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

2010 ◽  
Vol 638-642 ◽  
pp. 2938-2943 ◽  
Author(s):  
A.V. Mogilatenko ◽  
Frank Allenstein ◽  
M.A. Schubert ◽  
Meiken Falke ◽  
G. Beddies ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Subsequent Annealing ◽  
Formation Temperature ◽  
Transmission Electron

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.

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