The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates

1999 ◽  
Vol 564 ◽  
Author(s):  
S. L. Cheng ◽  
S. M. Chang ◽  
H. Y. Huang ◽  
Y. C. Peng ◽  
L. J. Chen ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Silicon Substrate ◽  
Function Analysis ◽  
Titanium Silicide ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Auto Correlation ◽  
Nucleation Sites ◽  
Auto Correlation Function ◽  
Ti Films

AbstractThe influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49- TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

HRTEM Study of the Interfacial Reactions of High-Temperature Sputtered Ti Thin Films on Preamorphized (001)Si

1999 ◽  
Vol 564 ◽  
Author(s):  
S. M Chang ◽  
H. Y Yang ◽  
H. Y Huang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Function Analysis ◽  
Interfacial Reactions ◽  
Simultaneous Presence ◽  
Auto Correlation ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Auto Correlation Function

AbstractInterfacial reactions of high-temperature sputtered Ti thin films on preamorphized (001)Si have been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. Simultaneous presence of multiphases was found to occur in the amorphous TiSix layer at the Ti/Si interface. The enhanced transformation of C54-TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the a-TiSix layer than that in samples deposited at room temperature.

KIC 5359678: A detached eclipsing binary with starspots

2021 ◽  
Author(s):  
Jiaxin Wang ◽  
Jianning Fu ◽  
Hubiao Niu ◽  
Yang Pan ◽  
Chunqian Li ◽  
...  
Keyword(s):  
Main Sequence ◽  
Function Analysis ◽  
Light Curves ◽  
Main Sequence Stars ◽  
Period Range ◽  
Eclipsing Binary ◽  
A Value ◽  
Auto Correlation ◽  
Auto Correlation Function ◽  
The Masses

Abstract We study the detached eclipsing binary, KIC 5359678, with starspot modulation using the high-quality Kepler photometry and LAMOST spectroscopy. The PHOEBE model, optimal for this binary, reveals that this system is a circular detached binary, composed of two F-type main-sequence stars. The masses and radii of the primary and the secondary are M1 = 1.31 ± 0.05M⊙, R1 = 1.52 ± 0.04R⊙, M2 = 1.12 ± 0.04M⊙, and R2 = 1.05 ± 0.06R⊙, respectively. The age of this binary is estimated to be about 2Gyr, a value much longer than the synchronization timescale of 17.8 Myr. The residuals of light curves show quasi-sinusoidal signals, which could be induced by starspots. We apply auto-correlation function analysis on the out-of-eclipse residuals and find that the spot with rotational period close to the orbital period, while, the decay timescale of starspots is longer than that on the single stars with the same temperature, period range, and rms scatter. A two-starspot model is adopted to fit the signals with two-dip pattern, whose result shows that the longitude decreases with time.

Auto-correlation function analysis of phase formation in iron ion-implanted amorphous silicon layers

2004 ◽  
Vol 461 (1) ◽  
pp. 126-130 ◽  
Author(s):  
T.H Yang ◽  
Y.L Chueh ◽  
H.C Chen ◽  
L.J Chen ◽  
L.J Chou
Keyword(s):  
Correlation Function ◽  
Amorphous Silicon ◽  
Phase Formation ◽  
Function Analysis ◽  
Iron Ion ◽  
Auto Correlation ◽  
Auto Correlation Function ◽  
Ion Implanted

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

2003 ◽  
Vol 212-213 ◽  
pp. 339-343 ◽  
Author(s):  
T.F. Chiang ◽  
W.W. Wu ◽  
S.L. Cheng ◽  
H.H. Lin ◽  
S.W. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Correlation Function ◽  
Function Analysis ◽  
Auto Correlation ◽  
Auto Correlation Function

Auto-correlation function analysis of amorphous interlayers in Ti/Si systems

2001 ◽  
Vol 4 (1-3) ◽  
pp. 237-240
Author(s):  
L.J. Chen ◽  
S.L. Cheng ◽  
S.M. Chang ◽  
H.Y. Huang
Keyword(s):  
Correlation Function ◽  
Function Analysis ◽  
Auto Correlation ◽  
Auto Correlation Function

Solid State Amorphization in Silicide—Forming Systems

1993 ◽  
Vol 320 ◽  
Author(s):  
L.J. Chen ◽  
W.Y. Hsieh ◽  
J.H. Lin ◽  
T.L. Lee ◽  
J.F. Chen ◽  
...  
Keyword(s):  
Refractory Metal ◽  
Solid Phase ◽  
Function Analysis ◽  
Platinum Group Metal ◽  
Auto Correlation ◽  
Initial Stage ◽  
Auto Correlation Function ◽  
The Stability ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTSolid phase amorphization has been found to occur in all refractory metal and a number of rare—earth and platinum group metal thin film on silicon systems. For Ti/Si, Zr/Si, Hf/Si, V/Si, Nb/Si and Ta/Si systems, the growth of amorphous interlayer (a—interlayer) was found to follow a linear law in the initial stage. Si atom was found to be the dominant diffusing species in the solid phase amorphization in Ti/Si, Zr/Si and Hf/Si systems. For the Y/Si system, the stability of amorphous interlayer depends critically on the composition of the amorphous films.Auto–correlation function analysis was utilized to determine the structure of the amorphous interlayers. HRTEM in conjunction with the fast Fourier transform were applied to determine the first nucleated crystalline phase. Simultaneous presence of multiphases was observed to occur in a number of refractory metal/Si systems. Interesting electrical properties of amorphous interlayers were found for Ti/Si, Zr/Si and Hf/Si systems.

Detection of Titanium Silicide Formation and Phase Transformation by Picosecond Ultrasonics

1992 ◽  
Vol 260 ◽  
Author(s):  
H. -N. Lin ◽  
R. J. Stoner ◽  
H. J. Maris ◽  
J. M. E. Harper ◽  
C. Cabral ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Longitudinal Sound Velocity ◽  
Ultrasonic Echo ◽  
Before And After ◽  
Non Destructive ◽  
Ti Films ◽  
Picosecond Ultrasonics

ABSTRACTPicosecond ultrasonics is employed to study the titanium silicide formation sequence for evaporated Ti films on silicon substrates annealed at temperatures between 300 and 800 °C. The measurements show significant differences in the ultrasonic echo pattern before and after the structural phases C49 and C54 are formed, thus indicating that picosecond ultrasonics is a sensitive non-destructive probe of silicide formation. The longitudinal sound velocity has been found to be (8.3 ± 0.2) × 105 cm/sec for C49 TiSi2, and about 5% lower for the C54 phase.

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