On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

Dopant Atoms ◽

Insight Into

ABSTRACTWe present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.

Damage calibration concept and novel B cluster reaction model for B transient enhanced diffusion over thermal process range from 600°C (839 h) to 1100°C (5 s) with various ion implantation doses and energies

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650433 ◽

2002 ◽

Cited By ~ 5

Author(s):

K. Suzuki ◽

T. Miyashita ◽

Y. Tada ◽

A. Hoefler ◽

N. Strecker ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Process ◽

Reaction Model ◽

Enhanced Diffusion ◽

Cluster Reaction

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

Applied Physics Letters ◽

10.1063/1.114752 ◽

1995 ◽

Vol 67 (15) ◽

pp. 2158-2160 ◽

Cited By ~ 6

Author(s):

J. Ravi ◽

Yu. Erokhin ◽

G. A. Rozgonyi ◽

C. W. White

Keyword(s):

Ion Implantation ◽

Enhanced Diffusion ◽

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

Journal of Applied Physics ◽

10.1063/1.371651 ◽

1999 ◽

Vol 86 (11) ◽

pp. 6039-6042 ◽

Cited By ~ 28

Author(s):

I. O. Usov ◽

A. A. Suvorova ◽

V. V. Sokolov ◽

Y. A. Kudryavtsev ◽

A. V. Suvorov

Keyword(s):

High Temperature ◽

Ion Implantation ◽

Enhanced Diffusion ◽

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

MRS Proceedings ◽

10.1557/proc-610-b4.2 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 3

Author(s):

L. S. Robertson ◽

P. N. Warnes ◽

K. S. Jones ◽

S. K. Earles ◽

M. E. Law ◽

...

Keyword(s):

Ion Implantation ◽

Secondary Ion Mass Spectrometry ◽

Chemical Species ◽

Amorphous Layer ◽

Experimental Conditions ◽

Enhanced Diffusion ◽

Transmission Electron ◽

Species Effect ◽

Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

MRS Proceedings ◽

10.1557/proc-610-b6.6 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 1

Author(s):

P. H. Keys ◽

R. Brindos ◽

V. Krishnamoorthy ◽

M. Puga-Lambers ◽

K. S. Jones ◽

...

Keyword(s):

Ion Implantation ◽

Secondary Ion Mass Spectrometry ◽

Extended Defects ◽

Enhanced Diffusion ◽

Transmission Electron ◽

Initial Nucleation ◽

Primary Damage ◽

Dopant Atoms ◽

Phosphorus Doped ◽

Secondary Ion

AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

Transient enhanced diffusion from decaborane molecular ion implantation

Applied Physics Letters ◽

10.1063/1.122353 ◽

1998 ◽

Vol 73 (14) ◽

pp. 2015-2017 ◽

Cited By ~ 23

Author(s):

Aditya Agarwal ◽

H.-J. Gossmann ◽

D. C. Jacobson ◽

D. J. Eaglesham ◽

M. Sosnowski ◽

...

Keyword(s):

Ion Implantation ◽

Molecular Ion ◽

Enhanced Diffusion ◽

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

Materials Chemistry and Physics ◽

10.1016/s0254-0584(98)00108-4 ◽

1998 ◽

Vol 54 (1-3) ◽

pp. 80-83 ◽

Cited By ~ 35

Author(s):

Norihiro Shimada ◽

Takaaki Aoki ◽

Jiro Matsuo ◽

Isao Yamada ◽

Kenichi Goto ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy ◽

Enhanced Diffusion ◽

Cluster Ion ◽

Energy Cluster

Species and dose dependence of ion implantation damage induced transient enhanced diffusion

Journal of Applied Physics ◽

10.1063/1.361162 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2352-2363 ◽

Cited By ~ 66

Author(s):

H. S. Chao ◽

S. W. Crowder ◽

P. B. Griffin ◽

J. D. Plummer

Keyword(s):

Ion Implantation ◽

Dose Dependence ◽

Enhanced Diffusion ◽

Implantation Damage ◽

Ion implantation of silicon wafers for defect-reduced doped layer formation with low dopant atom diffusion

Journal of Materials Research ◽

10.1557/jmr.1994.2987 ◽

1994 ◽

Vol 9 (11) ◽

pp. 2987-2992

Author(s):

Naoto Shigenaka ◽

Shigeki Ono ◽

Tsuneyuki Hashimoto ◽

Motomasa Fuse ◽

Nobuo Owada

Keyword(s):

Ion Implantation ◽

Amorphous Phase ◽

Amorphous Layer ◽

Defect Layer ◽

Silicon Wafers ◽

Dopant Atom ◽

Layer Formation ◽

Atom Diffusion ◽

Enhanced Diffusion ◽

Dopant Atoms

A new process for ion implantation into silicon wafers was proposed. This process has an additional implantation step to form an amorphous phase. At first self-ions are implanted into a cooled wafer (< −30 °C) to form the amorphous phase, and subsequently dopant atoms are implanted to form a doped layer within the amorphous layer. After annealing above 650 °C, the silicon wafer is completely recrystallized, and no defects with sizes detectable by TEM are present near the doped layer. There is indeed a defect layer in the wafer; however, it lies along the amorphous/crystal interface that is behind the doped layer. The concentration profile of the dopant atoms is not changed during epitaxial recrystallization, and further dopant atom diffusion during annealing is limited to about 0.05 μm, because defect-enhanced diffusion does not occur. The double implantation method is considered to be effective for doped layer formation in the VLSI fabrication process.