Phosphorus / Silicon Interstitial Annealing After Ion Implantation

AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

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Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

MRS Proceedings ◽

10.1557/proc-262-701 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 1

Author(s):

J.W. Honeycutt ◽

J. Ravi ◽

G. A. Rozgonyi

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Complete Removal ◽

Dislocation Loops ◽

Enhanced Diffusion ◽

Depth Profiles ◽

Enhanced Dissolution ◽

Implantation Damage ◽

Transmission Electron ◽

Defect Behavior ◽

Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

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Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

MRS Proceedings ◽

10.1557/proc-527-227 ◽

1998 ◽

Vol 527 ◽

Author(s):

R. J. Hanrahan ◽

S. P. Withrow ◽

M. Puga-Lambers

Keyword(s):

Mass Spectrometry ◽

Ion Implantation ◽

Single Crystal ◽

Secondary Ion Mass Spectrometry ◽

Tracer Diffusion ◽

Dynamic Strain ◽

Enhanced Diffusion ◽

Ion Mass Spectrometry ◽

Impurity Elements ◽

Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

MRS Proceedings ◽

10.1557/proc-537-g9.9 ◽

1998 ◽

Vol 537 ◽

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

J. Jasinski ◽

J. Kozubowski ◽

A. Barcz ◽

...

Keyword(s):

Electron Microscopy ◽

Heat Treatment ◽

Secondary Ion Mass Spectrometry ◽

Structural Transformations ◽

Thermally Activated ◽

Ohmic Behavior ◽

Transmission Electron ◽

Dopant Atoms ◽

Ohmic Contact Formation ◽

Secondary Ion

AbstractStructural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

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Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

MRS Proceedings ◽

10.1557/proc-610-b4.2 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 3

Author(s):

L. S. Robertson ◽

P. N. Warnes ◽

K. S. Jones ◽

S. K. Earles ◽

M. E. Law ◽

...

Keyword(s):

Ion Implantation ◽

Secondary Ion Mass Spectrometry ◽

Chemical Species ◽

Amorphous Layer ◽

Experimental Conditions ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion ◽

Transmission Electron ◽

Species Effect ◽

Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

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Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

MRS Proceedings ◽

10.1557/proc-504-141 ◽

1997 ◽

Vol 504 ◽

Cited By ~ 2

Author(s):

Igor O. Usov ◽

A. A. Suvorova ◽

V. V. Sokolov ◽

Y. A. Kudryavtsev ◽

A. V. Suvorov

Keyword(s):

Mass Spectrometry ◽

Diffusion Coefficient ◽

High Temperature ◽

Ion Implantation ◽

Room Temperature ◽

Secondary Ion Mass Spectrometry ◽

Diffusion Mechanism ◽

Enhanced Diffusion ◽

Sic Wafer ◽

Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003549 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 864-869

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

J. Jasinski ◽

J. Kozubowski ◽

A. Barcz ◽

...

Keyword(s):

Electron Microscopy ◽

Heat Treatment ◽

Secondary Ion Mass Spectrometry ◽

Structural Transformations ◽

Thermally Activated ◽

Ohmic Behavior ◽

Transmission Electron ◽

Dopant Atoms ◽

Ohmic Contact Formation ◽

Secondary Ion

Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

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Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P+ Implanted Si

MRS Proceedings ◽

10.1557/proc-568-175 ◽

1999 ◽

Vol 568 ◽

Cited By ~ 2

Author(s):

J. Li ◽

P. Keys ◽

J. Chen ◽

M. E. Law ◽

K. S. Jones ◽

...

Keyword(s):

Enhanced Diffusion ◽

Interstitial Concentration ◽

Transient Enhanced Diffusion ◽

Transmission Electron ◽

Defect Evolution ◽

Diffusion Phenomena ◽

Dopant Atoms ◽

Relationship Of ◽

The Relationship ◽

Secondary Ion

ABSTRACTContinuous scaling of device dimensions requires better understanding of non-equilibrium diffusion phenomena such as transient enhanced diffusion (TED). To this end, it is important to understand the relationship of the defect evolution with TED. Defect evolution in P+ implanted Si has been investigated by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) has been used to study phosphorus TED. These studies show that another type of defect, i.e. dot defects are present in P+implanted Si (100 keV, 1.OX104/cm2). The evolution of defects in P+ implants is compared with that in Si+ implants. P+ implants give rise to small dot defects mixed with {311} defects while Si+ implants give rise to only {311} defects. The dot defects and {311} defects in P+ implants dissolve faster than the {311} defects from Si+ implants. The interstitial concentration trapped in the dot defects and the {311} defects from P+ implants is slight lower than that from Si+ implants. Dot defects seem to have only a small role in phosphorus TED. Interaction of silicon interstitials emitted from the dissolution of {311} defects with phosphorus dopant atoms is believed to be the dominant driving force for the TED. There may also be a contribution from dissolution of non-visible phosphorus interstitial clusters (PIC's). Correlation of defect evolution and TED has been addressed.

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Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.114.285 ◽

2006 ◽

Vol 114 ◽

pp. 285-290

Author(s):

Andrzej Misiuk ◽

Barbara Surma ◽

Jadwiga Bak-Misiuk ◽

Vito Raineri

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Crystalline Silicon ◽

Extended Defects ◽

X Ray ◽

Transmission Electron ◽

Effect Of Treatment ◽

Amorphous Si ◽

Induced Defects ◽

Ray Methods ◽

Secondary Ion

The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2, energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.

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Wear Resistance Improvement of Cemented Tungsten Carbide Deep-Hole Drills after Ion Implantation

Materials ◽

10.3390/ma14020239 ◽

2021 ◽

Vol 14 (2) ◽

pp. 239

Author(s):

Dmitrij Morozow ◽

Marek Barlak ◽

Zbigniew Werner ◽

Marcin Pisarek ◽

Piotr Konarski ◽

...

Keyword(s):

Ion Implantation ◽

Tungsten Carbide ◽

Photoelectron Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Carbon Layer ◽

Hole Drilling ◽

Deep Hole ◽

Tungsten Nitrides ◽

Lubrication Effect ◽

Secondary Ion

The paper is dedicated to the lifetime prolongation of the tools designed for deep-hole drilling. Among available methods, an ion implantation process was used to improve the durability of tungsten carbide (WC)-Co guide pads. Nitrogen fluencies of 3 × 1017 cm−2, 4 × 1017 cm−2 and 5 × 1017 cm−2 were applied, and scanning electron microscope (SEM) observations, energy dispersive spectroscopy (EDS) analyses, X-ray photoelectron spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements were performed for both nonimplanted and implanted tools. The durability tests of nonimplanted and the modified tools were performed in industrial conditions. The durability of implanted guide pads was above 2.5 times more than nonimplanted ones in the best case, presumably due to the presence of a carbon-rich layer and extremely hard tungsten nitrides. The achieved effect may be attributed to the dissociation of tungsten carbide phase and to the lubrication effect. The latter was due to the presence of pure carbon layer with a thickness of a few dozen nanometers. Notably, this layer was formed at a temperature of 200 °C, much smaller than in previously reported research, which makes the findings even more valuable from economic and environmental perspectives.

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