Li Ion diffusion measurements in crystalline and amorphous V2O5 thin-film battery cathodes

1999 ◽  
Vol 575 ◽  
Author(s):  
Jeanne M. McGraw ◽  
Christian S. Bahn ◽  
Philip A. Parilla ◽  
John D. Perkins ◽  
Dennis W. Readey ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Single Phase ◽  
General Trend ◽  
Pulsed Laser ◽  
Chemical Diffusion ◽  
Laser Deposition ◽  
Ion Diffusion ◽  
Thin Film Battery ◽  
Li Ion ◽  
Titration Technique

ABSTRACTThin films of crystalline and amorphous V2O5 were deposited by pulsed laser deposition (PLD) and the chemical diffusion coefficients, , were measured by the potentiostatic intermittent titration technique (PITT). In crystalline V2O5 films, the maximum and minimum were found to be 1.7 × 10−2 cm2/s and 5.8 × 10−15 cm2/s respectively, with a general trend for to rise in single-phase regions. The changes in correlated well to the known phases in LiV2O5. In amorphous V2O5 films, exhibited a smooth, continuous decrease as the Li concentration increased.

Lithium Ion Diffusion Measurements in High Quality LiCoO2 thin Film Battery Cathodes

1999 ◽  
Vol 575 ◽  
Author(s):  
Christian S. Bahn ◽  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Phillip A. Parilla ◽  
David S. Ginley
Keyword(s):  
Lithium Ion ◽  
Chemical Diffusion ◽  
Substrate Material ◽  
Laser Deposition ◽  
Ion Diffusion ◽  
High Quality ◽  
Thin Film Battery ◽  
Wide Range ◽  
Lithium Ion Diffusion ◽  
Titration Technique

ABSTRACTHighly crystalline, textured thin films of LiCoxAl1-xO2 (x=0, 0.5) have been grown by pulsed laser deposition. Films of both stoichiometries were dense and uniaxially textured with Li, Co (or Co, A1) layers parallel to the substrate. It was found that crystal quality depended strongly on oxygen partial pressure, substrate temperature, and substrate material. The deposition of LiCo0.5Al0.5O2 is also highly dependent upon laser fluence, requiring at least 12.8 J/cm2 for high quality films. Chemical diffusion measurements were performed over a wide range of lithium contents using the potentiostatic intermittent titration technique. Maximum and minimum effective for LiCoO2 were 4.0 × 10−11 and 1.2 × 10−2 cm2/s, respectively, and for LiCo0.5A10.5O2, 2.2 × 10−12 and 8.0 × 10−17 cm2/s, respectively.

Li-ion diffusion kinetics in LiMn2O4 thin films prepared by pulsed laser deposition

2008 ◽  
Vol 54 (2) ◽  
pp. 376-381 ◽  
Author(s):  
J. Xie ◽  
K. Kohno ◽  
T. Matsumura ◽  
N. Imanishi ◽  
A. Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Diffusion Kinetics ◽  
Ion Diffusion ◽  
Limn2o4 Thin Films ◽  
Li Ion

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Li-ion diffusion behavior in Sn, SnO and SnO2 thin films studied by galvanostatic intermittent titration technique

2010 ◽  
Vol 181 (35-36) ◽  
pp. 1611-1615 ◽  
Author(s):  
J. Xie ◽  
N. Imanishi ◽  
A. Hirano ◽  
Y. Takeda ◽  
O. Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Diffusion ◽  
Diffusion Behavior ◽  
Galvanostatic Intermittent Titration Technique ◽  
Li Ion ◽  
Sno2 Thin Films ◽  
Titration Technique

A Basic Thin Film Study of Spinel Limn204As a Possible Cathode Material for Lithium Secondary Cells

1995 ◽  
Vol 393 ◽  
Author(s):  
Takashi Miura ◽  
Tomiya Kishi
Keyword(s):  
Single Phase ◽  
Chemical Diffusion ◽  
Phase Region ◽  
Chemical Diffusion Coefficient ◽  
Galvanostatic Charge ◽  
Active Materials ◽  
Film Study ◽  
Galvanostatic Intermittent Titration Technique ◽  
Titration Technique ◽  
Charge Discharge

ABSTRACTIn a series of fundamental studies on the cathode active materials for a lithium secondary cell using geometrically well-defined sample electrodes, thin films of spinel LiMn204on a platinum plate were investigated in this work in an LiCl04/propylene carbonate solution. These pyrolytically prepared films exihibit reversible extraction/insertion behavior for lithium under galvanostatic charge/discharge cycling between 4.3-3.5 V. The chemical diffusion coefficient of lithium in LixMn204determined by the galvanostatic intermittent titration technique (GITT) was in the order of 10−7-10−10cm2- s−1within a spinel single-phase region of 0.6<x<1.0 and increased with increasingx.

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