Faceting of Single-Crystal SrTiO3 During Wet Chemical Etching

1999 ◽  
Vol 587 ◽  
Author(s):  
G. C. Spalding ◽  
W. L. Murphy ◽  
T. M. Davidsmeier ◽  
J. E. Elenewski

AbstractWe use an Atomic Force Microscope (AFM) to study changes in the surface of single-crystal SrTiO3 etched in HF-based solutions. Attention in this work has been focused upon observations of pyramidal pitting – both because of an interest in avoiding etch pits during substrate preparation prior to heteroepitaxial growth, and because of an interest in micromachining this highly polarizable material. We note that (110) SrTiO3 is surprisingly robust against the formation of pits, while pitting is significant on {100} surfaces. Particular etch rates have been measured, and we discuss anisotropies in the rates of dissolution. These data are combined to extract a macroscopic model describing processes relevant to the most extreme pitting, which we show to be associated with surface defects.

2014 ◽  
Vol 24 (6) ◽  
pp. 237-241
Author(s):  
Cheol Woo Park ◽  
Jae Hwa Park ◽  
Yoon Pyo Hong ◽  
Dong Keun Oh ◽  
Bong Geun Choi ◽  
...  

2005 ◽  
Vol 486 (1-2) ◽  
pp. 42-45 ◽  
Author(s):  
Kenji Takahashi ◽  
Hiroshi Funakubo ◽  
Naoki Ohashi ◽  
Hajime Haneda

2005 ◽  
Vol 86 (6) ◽  
pp. 063111 ◽  
Author(s):  
G. Fasching ◽  
K. Unterrainer ◽  
W. Brezna ◽  
J. Smoliner ◽  
G. Strasser

2000 ◽  
Vol 639 ◽  
Author(s):  
T. C Wen ◽  
S.C. Lee ◽  
H. S. Chuang ◽  
C. H. Chiou ◽  
W. I Lee

ABSTRACTThis work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet chemical etching. A mixture of H2SO4 and H3PO4 was used as a dislocation etchant, and SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM images present the flat, smooth surface without any pits or hillocks. After the chemical etching, hexagonal shaped etch pits were observed at the edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the “window” region and the coalescent line of two growing fronts. In contrast, the overgrowth region was nearly free of etch pits. Moreover, we observed that different sizes of etch pits dominated in “window” region and coalescent region. This implied different types dislocations dominated in these regions.


2018 ◽  
Vol 282 ◽  
pp. 284-287
Author(s):  
Harold Philipsen ◽  
Sander Teck ◽  
Nils Mouwen ◽  
Wouter Monnens ◽  
Quoc Toan Le

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.


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