Atomic force microscopic study of structures of cleaved surfaces of CaSO4 after wet chemical etching

AbstractWe use an Atomic Force Microscope (AFM) to study changes in the surface of single-crystal SrTiO3 etched in HF-based solutions. Attention in this work has been focused upon observations of pyramidal pitting – both because of an interest in avoiding etch pits during substrate preparation prior to heteroepitaxial growth, and because of an interest in micromachining this highly polarizable material. We note that (110) SrTiO3 is surprisingly robust against the formation of pits, while pitting is significant on {100} surfaces. Particular etch rates have been measured, and we discuss anisotropies in the rates of dissolution. These data are combined to extract a macroscopic model describing processes relevant to the most extreme pitting, which we show to be associated with surface defects.

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Submicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching

Nanotechnology ◽

10.1088/0957-4484/8/2/005 ◽

1997 ◽

Vol 8 (2) ◽

pp. 76-81 ◽

Cited By ~ 12

Author(s):

S F Y Li ◽

H T Ng ◽

P C Zhang ◽

P K H Ho ◽

L Zhou ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Silicon Substrate ◽

Chemical Etching ◽

Force Microscopy ◽

Atomic Force ◽

Wet Chemical ◽

Wet Chemical Etching

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Tracing deeply buried InAs∕GaAs quantum dots using atomic force microscopy and wet chemical etching

Applied Physics Letters ◽

10.1063/1.1862332 ◽

2005 ◽

Vol 86 (6) ◽

pp. 063111 ◽

Cited By ~ 5

Author(s):

G. Fasching ◽

K. Unterrainer ◽

W. Brezna ◽

J. Smoliner ◽

G. Strasser

Keyword(s):

Quantum Dots ◽

Atomic Force Microscopy ◽

Chemical Etching ◽

Force Microscopy ◽

Atomic Force ◽

Wet Chemical ◽

Wet Chemical Etching

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Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.282.284 ◽

2018 ◽

Vol 282 ◽

pp. 284-287

Author(s):

Harold Philipsen ◽

Sander Teck ◽

Nils Mouwen ◽

Wouter Monnens ◽

Quoc Toan Le

Keyword(s):

Surface Roughness ◽

Atomic Force Microscopy ◽

Chemical Etching ◽

Rutherford Backscattering ◽

Force Microscopy ◽

Acidic Solutions ◽

Atomic Force ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Low K

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.

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Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.6679 ◽

1996 ◽

Vol 35 (Part 1, No. 12B) ◽

pp. 6679-6682 ◽

Cited By ~ 3

Author(s):

Kiyoshi Araki ◽

Kiyoshi Morimoto ◽

Kiyoyuki Morita ◽

Masaaki Niwa ◽

Yoshihiko Hirai

Keyword(s):

Atomic Force Microscope ◽

Chemical Etching ◽

Fabrication Method ◽

Atomic Force ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Enhanced Oxidation ◽

Si Nanostructures

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Decapsulation Techniques for Cu Wire Bonding Package

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0217 ◽

2009 ◽

Author(s):

Dongmei Meng ◽

Joe Rupley ◽

Chris McMahon

Keyword(s):

Laser Ablation ◽

Thin Layer ◽

Chemical Etching ◽

Wire Bonding ◽

Methods And Techniques ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Reliability Issue ◽

Etch Time ◽

Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

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