The Source of Transient Enhanced Diffusion in Sub-keV Implanted Boron in Crystalline Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
E. Napolitani ◽  
A. Carnera ◽  
V. Privitera ◽  
E. Schroer ◽  
G. Mannino ◽  
...  
Keyword(s):  
Surface Layer ◽  
Annealing Temperature ◽  
Crystalline Silicon ◽  
Point Of View ◽  
Low Energy ◽  
Implantation Energy ◽  
Enhanced Diffusion ◽  
Decay Constants ◽  
Transient Enhanced Diffusion ◽  
Activation Annealing

AbstractThe transient enhanced diffusion (TED) during activation annealing of ultra low energy implanted boron (0.5 keV & 1 keV, 1×1013/cm2 & 1×1014/cm2) in silicon is investigated in detail. Annealing in the temperature range from 450°C to 750°C is either performed directly after implantation or after the removal of a surface layer before annealing. The kinetics revealed two regimes of enhanced diffusion ruled by different decay constants and different activation energies. The dependence of these two processes on implantation energy and annealing temperature is described and explained from the microscopical point of view. The annealings performed after surface layer removal, revealed that the defects responsible for the faster diffusion are located deeper than the defects responsible for the slower process.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

2004 ◽  
Vol 810 ◽  
Author(s):  
Huda A. W. A. El Mubarek ◽  
Yun Wang ◽  
Janet M. Bonar ◽  
Peter Hemment ◽  
Peter Ashburn
Keyword(s):  
Thermal Diffusion ◽  
Sige Layer ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Rich Region ◽  
Implantation Energy ◽  
Enhanced Diffusion ◽  
Partial Relaxation ◽  
Transient Enhanced Diffusion ◽  
Marker Layer

ABSTRACTThis paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

ULTRATHIN Al FILM ON THE W(100) SURFACE

2009 ◽  
Vol 23 (06) ◽  
pp. 835-847 ◽  
Author(s):  
D. S. CHOI ◽  
D. H. KIM
Keyword(s):  
Surface Layer ◽  
Annealing Temperature ◽  
Low Energy ◽  
Ion Scattering ◽  
Left Hand ◽  
Low Energy Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
The Right ◽  
Al Adsorption ◽  
Zigzag Structure

We have investigated Al adsorption on the W (100) surface using LEED and low energy Ion Scattering Spectroscopy (ISS). We observe a p(2 × 1) double domain LEED image for the 1.0 ML Al/W (100) surface at annealing temperature 850°C. We also measured the Al adsorption site at the Al/W (100) — p(2 × 1) surface using ISS. It is found that Al atoms adsorbed at 0.7±0.1 Å aside from the center of the bridge sites with a zigzag structure — one atom adsorbs at the right-hand side and next atom at the left-hand side along the [100] direction. The height of the adsorbed Al atoms is determined to be 1.75±0.15 Å above the W surface layer.

Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon

1995 ◽  
Vol 67 (14) ◽  
pp. 2025-2027 ◽  
Author(s):  
L. H. Zhang ◽  
K. S. Jones ◽  
P. H. Chi ◽  
D. S. Simons
Keyword(s):  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

1998 ◽  
Vol 84 (11) ◽  
pp. 5997-6002 ◽  
Author(s):  
V. Krishnamoorthy ◽  
K. Moller ◽  
K. S. Jones ◽  
D. Venables ◽  
J. Jackson ◽  
...  
Keyword(s):  
Low Energy ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Defect Microstructure

Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation

1999 ◽  
Vol 568 ◽  
Author(s):  
E. Napolitani ◽  
A. Carnera ◽  
V. Privitera ◽  
A. La Magna ◽  
E. Schroer ◽  
...  
Keyword(s):  
Transport Properties ◽  
Point Defects ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Electrical Activation ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Atomic Transport ◽  
Wide Range

ABSTRACTWe investigated the atomic transport properties and electrical activation of boron in crystalline epitaxial silicon after ultra-low energy ion implantation (0.25–1 keV) and rapid thermal annealing (750–1100 °C). A wide range of implant doses was investigated (3×1012-1×105/cm2). A fast Transient Enhanced Diffusion (TED) pulse is observed involving the tail of the implanted Boron, the profile displacement being dependent on the implant dose. The excess of interstitials able to promote enhanced diffusion of implanted boron occurs, provided the implant dose is high enough to generate a significant total number of point defects. The Boron diffusion following the fast initial TED pulse can be described by the equilibrium diffusion equations.The electrical activation of ultra-shallow implants is hard to achieve, due to the high concentration of dopant and point defects confined in a very shallow layer that significantly contributes to the formation of clusters and complex defects. Provided a correct combination of annealing temperatures and times for these ultra-shallow implants is chosen, however, a sheet resistance 500 Δ/square with a junction depth below 0.1μm can be obtained, which has a noteworthy technological relevance for the future generations of semiconductor devices.

Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

2000 ◽  
Vol 3 (4) ◽  
pp. 285-290 ◽  
Author(s):  
S Whelan ◽  
D.G Armour ◽  
J.A Van den Berg ◽  
R.D Goldberg ◽  
S Zhang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion
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