Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 by Chemical Vapor Deposition

2000 ◽  
Vol 640 ◽  
Author(s):  
Shigehiro Nishino ◽  
Yasuichi Masuda ◽  
Satoru Ohshima ◽  
Chacko Jacob
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Surface Treatment ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Impurity Incorporation ◽  
Cvd Growth

ABSTRACTWe have grown epitaxial layer introducing buffer layer using N2 doping on 6H-SiC (1120) and (1100) substrate. The improvement of morphology could be obtained for (1120) and (1100) epilayers. Morphologies of (1120) epilayers were independent on off-orientations, Morphologies of (1100) epilayers were very sensitive to the off-orientations. The quality of epilayer, and impurity incorporation for a-plane were very influenced by the surface treatment before CVD growth compared to (0001) epilayers.

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 251-254 ◽  
Author(s):  
Kazuki Meguro ◽  
Tsugutada Narita ◽  
Kaon Noto ◽  
Hideki Nakazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films

We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films.

Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

AbstractControl of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

1989 ◽  
Vol 148 ◽  
Author(s):  
T. T. Cheng ◽  
P. Pirouz ◽  
J. A. Powell
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Experimental Results ◽  
Surface Nucleation ◽  
Cvd Growth

ABSTRACTThe concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.

Anodic Surface Treatment on Carbon Fibers - The Effect on Microstructure of Pyrocarbon Matrix during Chemical Vapor Deposition

2011 ◽  
Vol 399-401 ◽  
pp. 363-367
Author(s):  
Jie Chen ◽  
Shu Yu ◽  
Xiang Xiong
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Surface Treatment ◽  
Functional Groups ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Proper Time ◽  
Chemical Vapor ◽  
Ammonium Bicarbonate ◽  
Electrolyte Effects

Before chemical vapor deposition, PAN-based carbon fibers were modified by anodic surface treatment for different time, using 5% ammonium bicarbonate as electrolyte. Effects of the surface treatment on surface mophology, chemical functional groups of carbon fibers were investigated. The microstructure of pyrocarbon were analysed as well. The results show that the anodic surface treatment by 5% ammonium bicarbonate for proper time can improve the surface morphology and adjust the surface functinal groups of carbon fibers, which can promote the deposition of ordered pyrocarbon during chemical vapor deposition.

Surface morphology of AlN buffer layer and its effect on GaN growthby metalorganic chemical vapor deposition

2004 ◽  
Vol 85 (9) ◽  
pp. 1499-1501 ◽  
Author(s):  
D. G. Zhao ◽  
J. J. Zhu ◽  
Z. S. Liu ◽  
S. M. Zhang ◽  
Hui Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Aln Buffer ◽  
Metalorganic Chemical

High Quality AlGaAs Regrowth on Oxide-Free AlxGa1-xAs (x=0.26) by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 405 ◽  
Author(s):  
Kun-Jing Lee ◽  
Z. C. Huang ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Exciton Peak ◽  
Impurity Incorporation ◽  
Oxide Formation ◽  
Metalorganic Chemical

AbstractThe Al0.13Ga0.87As epilayers were regrown by metalorganic chemical vapor deposition (MOCVD) on different AI0.26Ga0.74As substrate layers. It was found that the quality of regrown A10.13Ga0.87As layers were significantly improved when a Se-doped Al0 26Ga0.74As substrate was used. Electrochemical C-V profile showed that no oxide formation and impurity incorporation at the regwon interface. Low-temperature (14.9 K) photoluminescence showed that the full width of half maximum (FWHM) of the bound exciton peak is as low as 4.51 meV. We attributed this improvement to the Se-passivation effect at the surface of Se-doped A10.26Ga0.74As substrate-layers. Results show that Se will delay the formation of native oxide to achieve the better quality of regrown AlGaAs layers.

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