The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

1989 ◽  
Vol 148 ◽  
Author(s):  
T. T. Cheng ◽  
P. Pirouz ◽  
J. A. Powell
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Experimental Results ◽  
Surface Nucleation ◽  
Cvd Growth

ABSTRACTThe concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 by Chemical Vapor Deposition

2000 ◽  
Vol 640 ◽  
Author(s):  
Shigehiro Nishino ◽  
Yasuichi Masuda ◽  
Satoru Ohshima ◽  
Chacko Jacob
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Surface Treatment ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Impurity Incorporation ◽  
Cvd Growth

ABSTRACTWe have grown epitaxial layer introducing buffer layer using N2 doping on 6H-SiC (1120) and (1100) substrate. The improvement of morphology could be obtained for (1120) and (1100) epilayers. Morphologies of (1120) epilayers were independent on off-orientations, Morphologies of (1100) epilayers were very sensitive to the off-orientations. The quality of epilayer, and impurity incorporation for a-plane were very influenced by the surface treatment before CVD growth compared to (0001) epilayers.

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 647-650
Author(s):  
J. MIMILA-ARROYO ◽  
J. DIAZ REYES
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Theoretical Models ◽  
Experimental Results ◽  
Reversible Chemical Reaction ◽  
Cvd Growth ◽  
Growing Conditions ◽  
Kinetics Of

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretical models are sophisticated and not accurate enough to correctly explain the experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction between the transporting gas and the III element at the source and the same reaction, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surfaces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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