Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System

2000 ◽  
Vol 640 ◽  
Author(s):  
S. T. Pantelides ◽  
R. Buczko ◽  
M. Di Ventra ◽  
S. Wang ◽  
S.-G. Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Oxidation Process ◽  
Atomic Scale ◽  
Contrast Imaging ◽  
Interface Defects ◽  
Device Applications ◽  
Z Contrast ◽  
And Control ◽  
Electron Energy Loss ◽  
Ultimate Purpose

ABSTRACTThis paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiCSiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Atomic Scale Analysis of a YSZ Bicrystal Grain Boundary

2001 ◽  
Vol 7 (S2) ◽  
pp. 400-401
Author(s):  
Y. Lei ◽  
Y. Ito ◽  
N. D. Browning
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Bulk Material ◽  
Atomic Scale ◽  
Structure Property ◽  
Contrast Imaging ◽  
Structure Property Relationships ◽  
Commercial Applications ◽  
Z Contrast ◽  
Electron Energy Loss

Yttria-stabilized zirconia (YSZ) has been the subject of many experimental and theoretical studies, due to the commercial applications of zirconia-based ceramics in solid state oxide fuel cells. Since the grain boundaries usually dominate the overall macroscopic performance of the bulk material, it is essential to develop a fundamental understanding of their structure-property relationships. Previous research has been performed on the atomic structure of grain boundaries in YSZ, but no precise atomic scale compositional and chemistry characterization has been carried out. Here we report a detailed analytical study of an [001] symmetric 24° bicrystal tilt grain boundary in YSZ prepared with ∼10 mol % Y2O3 by Shinkosha Co., Ltd by the combination of Z-contrast imaging and electron energy loss spectroscopy (EELS).The experimental analysis of the YSZ sample was carried out on a 200kV Schottky field emission JEOL 201 OF STEM/TEM4.

Analysis of Nanometer Sized Pyrogenic Particles by Scanning Transmission Electron Microscopy

1995 ◽  
Vol 53 ◽  
pp. 218-219
Author(s):  
DJ Wallis ◽  
ND Browning ◽  
CM Megaridis
Keyword(s):  
Operating Conditions ◽  
Atomic Scale ◽  
Contrast Imaging ◽  
Chemical Mechanisms ◽  
Transmission Electron ◽  
Angle Scattering ◽  
Scanning Transmission ◽  
Z Contrast ◽  
Physical And Chemical ◽  
Electron Energy Loss

Iron is a ubiquitous element on the earth's surface, and is thus involved in most naturally occurring fires. Iron organometalic compounds have also been known to suppress carbonaceous soot emissions under certain operating conditions of practical combustors. In order to unravel the physical and chemical mechanisms of influence, of iron on the emission of carbonaceous pyrogenic particles, finescale characterization techniques need to be implemented.The combined techniques of Z-contrast imaging and electron energy loss spectroscopy (EELS) in a VG HB-501 dedicated STEM are ideally suited to study such a system. The sensitivity of the Z-contrast imaging technique to high-Z materials makes it ideal for location of the iron particles within the much lower atomic number matrix. As only the high-angle scattering is used in the image formation, EELS can be performed simultaneously from a position defined in the image. This accurate positioning of the probe by the Z-contrast image permits both compositional and bonding information to be obtained with a spatial resolution approaching the atomic scale.

scholarly journals Atomic Scale Structure and Chemistry of Interfaces by Z-Contrast Imaging and Electron Energy Loss Spectroscopy in the Stem

1993 ◽  
Vol 319 ◽  
Author(s):  
M.M. Mcgibbon ◽  
N.D. Browning ◽  
M.F. Chisholm ◽  
S.J. Pennycook ◽  
V. Ravikumar ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Structural Information ◽  
Atomic Scale ◽  
Boundary Structure ◽  
Structure Property ◽  
Contrast Imaging ◽  
Z Contrast ◽  
Electron Energy Loss

AbstractThe macroscopic properties of many materials are controlled by the structure and chemistry at grain boundaries. A basic understanding of the structure-property relationship requires a technique which probes both composition and chemical bonding on an atomic scale. The high-resolution Z-contrast imaging technique in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition can be interpreted intuitively. This direct image allows the electron probe to be positioned over individual atomic columns for parallel detection electron energy loss spectroscopy (EELS) at a spatial resolution approaching 0.22nm. In this paper we have combined the structural information available in the Z-contrast images with the bonding information obtained from the fine structure within the EELS edges to determine the grain boundary structure in a SrTiO3 bicrystal.

scholarly journals Atomic Scale Structure and Chemistry of Interfaces by Z-Contrast Imaging and Electron Energy Loss Spectroscopy in the Stem

1994 ◽  
Vol 341 ◽  
Author(s):  
M. M. McGibbon ◽  
N. D. Browning ◽  
M. F. Chisholm ◽  
A. J. McGibbon ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Atomic Structure ◽  
Electron Energy Loss Spectroscopy ◽  
Atomic Scale ◽  
Chemical Information ◽  
Contrast Imaging ◽  
Z Contrast ◽  
Electron Energy Loss

AbstractThe macroscopic properties of many materials are controlled by the structure and chemistry at grain boundaries. A basic understanding of the structure-property relationship requires a technique which probes both composition and chemical bonding on an atomic scale. High-resolution Z-contrast imaging in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition across an interface can be interpreted directly without the need for preconceived atomic structure models (1). Since the Z-contrast image is formed by electrons scattered through high angles, parallel detection electron energy loss spectroscopy (PEELS) can be used simultaneously to provide complementary chemical information on an atomic scale (2). The fine structure in the PEEL spectra can be used to investigate the local electronic structure and the nature of the bonding across the interface (3). In this paper we use the complimentary techniques of high resolution Zcontrast imaging and PEELS to investigate the atomic structure and chemistry of a 25° symmetric tilt boundary in a bicrystal of the electroceramic SrTiO3.

Investigating Ca Segregated to a Grain Boundaries in MgO Using Multiple Scattering Analysis of Electron Energy Loss Spectra

1998 ◽  
Vol 4 (S2) ◽  
pp. 776-777
Author(s):  
J. P. Buban ◽  
J. Zaborac ◽  
H. Moltaji ◽  
G. Duscher ◽  
N. D. Browning
Keyword(s):  
Energy Loss ◽  
Grain Boundaries ◽  
Electron Energy ◽  
Structural Model ◽  
Boundary Structure ◽  
Structure Property ◽  
Contrast Imaging ◽  
Scale Properties ◽  
Z Contrast ◽  
Electron Energy Loss

Although grain boundaries typically account for only a small fraction of a material, they can have far reaching effects on the overall bulk scale properties. These effects are usually simply linked to the boundary having a different atomic arrangement to the bulk. A necessary first step in understanding the structure-property relationships is therefore a detailed determination of the boundary structure.One means of obtaining detailed information on the structure of grain boundaries is through correlated Z-contrast imaging and electron energy loss spectroscopy (EELS). The Z-contrast image generates a map of the grain boundary which can be used to position the probe in defined locations for spectroscopy. In the case of oxides, a structural model of the metal atom positions can be determined directly from the image. Furthermore, using a simple bond-valence sum minimization routine, the oxygen atoms can be placed so that the structure contains atoms that have valences consistent with their expected formal valence state.

Atomic-Scale Studies of Complex Oxide Interfaces Using Aberration-Corrected Z-contrast Imaging and EELS

2006 ◽  
Vol 12 (S02) ◽  
pp. 112-113
Author(s):  
RF Klie ◽  
MA Schofield ◽  
M Varela ◽  
SJ Pennycook ◽  
A Bleloch ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Atomic Scale ◽  
Contrast Imaging ◽  
Oxide Interfaces ◽  
Z Contrast ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Analysis of the Atomic Scale Defect Chemistry in Oxygen Deficient Materials by STEM

1999 ◽  
Vol 589 ◽  
Author(s):  
Y. Ito ◽  
S. Stemmer ◽  
R. F. Klie ◽  
N. D. Browning ◽  
A. Sane ◽  
...  
Keyword(s):  
Preliminary Investigation ◽  
High Mobility ◽  
Scanning Transmission Electron Microscope ◽  
Defect Chemistry ◽  
Atomic Scale ◽  
Contrast Imaging ◽  
Separation Membranes ◽  
Oxidation Reduction ◽  
Scanning Transmission ◽  
Z Contrast

AbstractThe high mobility of anion vacancies in oxygen deficient perovskite type materials makes these ceramics potential candidates for oxygen separation membranes. As a preliminary investigation of the defect chemistry in these oxides, we show here the analysis of SrCoO3−σ using atomic resolution Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope. In particular, after being subjected to oxidation/reduction cycles at high temperatures we find the formation of ordered microdomains with the brownmillerite structure.

Quantification of Compositional Modulations in Self-Assembled Multisheet (Cd, Zn, Mn)Se Quantum Dot Structures

2001 ◽  
Vol 7 (S2) ◽  
pp. 202-203
Author(s):  
T. Topuria ◽  
P. Möck ◽  
N.D. Browning ◽  
L.V. Titova ◽  
M. Dobrowolska ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Imaging Technique ◽  
Optoelectronic Device ◽  
Scanning Transmission Electron Microscope ◽  
Contrast Imaging ◽  
Cdse Qds ◽  
Scanning Transmission ◽  
Device Applications ◽  
Incoherent Imaging ◽  
Z Contrast

CdSe/ZnSe based semiconductor quantum dot (Q D) structures are a promising candidate for optoelectronic device applications. However, key to the luminescence properties is the cation distribution and ordering on the atomic level within the CdSe QDs/agglomerates. Here the Z contrast imaging technique in the scanning transmission electron microscope (STEM) is employed to study multisheet (Cd,Zn,Mn)Se QD structures. Since Z-contrast is an incoherent imaging technique, problems associated with strain contrast in conventional TEM are avoided an accurate size and composition determinations can be made.For this work we used a JEOL JEM 201 OF field emission STEM/TEM. The sample was grown by molecular beam epitaxy in order to achieve vertical self-ordering of Cd rich quasi-2D platelet This sample comprises 8 sequences of 10 ML (2.83 nm)Zn0.9Mn0.1Se cladding layer and 0.3 ML (0.09 nm) CdSe sheet, a further 10 ML of Zn0.9Mn0.1Se, and a 50 nm ZnSe capping layer.

The Si/SiO2 Interface: Atomic Structures, Composition, Strain And Energetics

1999 ◽  
Vol 5 (S2) ◽  
pp. 122-123 ◽  
Author(s):  
S. J. Pennycook ◽  
G. Duscher ◽  
R. Buczko ◽  
S. T. Pantelides
Keyword(s):  
First Principles ◽  
Interface Roughness ◽  
Atomic Scale ◽  
Thickness Variation ◽  
Atomic Structures ◽  
Bright Contrast ◽  
Z Contrast ◽  
Impurity Sites ◽  
Contrast Image ◽  
Detector Angle

A number of recent studies of grain boundaries and heterophase interfaces have demonstrated the power of combining Z-contrast STEM imaging, EELS and first-principles theoretical modeling to give an essentially complete atomic scale description of structure, bonding and energetics. Impurity sites and valence can be determined experimentally and configurations determined through calculations.Here we present an investigation of the Si/SiO2 interface. The Z-contrast image in Fig. la, taken with the VG Microscopes HB603U STEM, shows that the atomic structure of Si is maintained up to the last layers visible. The decrease in intensity near the interface could originate from interfacial roughness of around one unit cell (∼0.5 nm), or may represent dechanneling in the slightly buckled columns induced by the oxide. Fig. lb, taken from a sample with ∼1 nm interface roughness, shows a band of bright contrast near the interface. This is not due to impurities or thickness variation since it disappears on increasing the detector angle from 25 mrad to 45 mrad (Fig. lc), and is therefore due to induced strain.

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