High-Temperature Superconducting Tapes Deposited by the Non-Vacuum, Low-Cost Combustion Chemical Vapor Deposition Technique

2000 ◽  
Vol 659 ◽  
Author(s):  
Marvis K. White ◽  
Ian H. Campbell ◽  
Adam C. King ◽  
Steve L. Krebs ◽  
Dave S. Mattox ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Low Cost ◽  
High Temperature Superconductors ◽  
Continuous Production ◽  
Chemical Vapor ◽  
Capital Requirements ◽  
Current Status ◽  
Vapor Deposition Technique

ABSTRACTThe enormous technological potential of high-temperature superconductors (HTS) was realized immediately following their discovery in 1986, yet these materials largely remain laboratory curiosities as scientists struggle to scale from coupons to long lengths of practical coated conductor. Although both vacuum and non-vacuum processes are being investigated for commercial production, low-throughput vacuum techniques were the first to succeed in producing the buffer and superconducting layers necessary for superconducting tape with high critical currents. However, vacuum processes are not only expensive but impractical when addressing the needs for rapid production of kilometer lengths of wire. The innovative Combustion Chemical Vapor Deposition (CCVD) method used with the Rolling Assisted Biaxially Textured Substrates (RABiTS™) technology has shown significant promise in fabricating the multi-layer structures necessary for successful HTS tape while overcoming many of the shortcomings of traditional vacuum techniques. The key advantage of the CCVD technology is its ability to deposit high quality thin films in the open atmosphere using inexpensive precursor chemicals in solution. As a result, continuous, production-line manufacturing is possible with significantly reduced capital requirements and operating costs when compared to competing vacuum-based technologies. The current status of development for production of long lengths of high-temperature superconductors using CCVD will be discussed.

scholarly journals The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

2001 ◽  
Vol 689 ◽  
Author(s):  
Shara S. Shoup ◽  
Marvis K. White ◽  
Steve L. Krebs ◽  
Natalie Darnell ◽  
Adam C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Critical Current Density ◽  
Buffer Layer ◽  
Critical Current ◽  
Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
High Critical Current Density ◽  
High Quality

ABSTRACTThe innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.

Progress in Catalytic Preparation of Carbon/Carbon Composites

2013 ◽  
Vol 634-638 ◽  
pp. 2004-2008
Author(s):  
Bing Ju Li ◽  
Jun Li ◽  
Lei Shi ◽  
Zhou Jian Tan ◽  
Ji Qiao Liao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Catalytic Properties ◽  
Low Cost ◽  
Chemical Vapor ◽  
Carbon Composites ◽  
Catalytic Chemical Vapor Deposition ◽  
Vapor Deposition Technique ◽  
Development Tendency ◽  
Published Research

This paper reviewed published research into catalytic fabrication techniques and recent progresses of carbon/carbon (C/C) composites. It’s described the catalytic chemical vapor deposition theory and reviewed the catalytic properties of different metal catalysts. Merits and demerits of the traditional chemical vapor deposition, improved chemical vapor deposition and other new rapid densification techniques were analyzed. The new densification techniques are to shorten the preparation cycle, but most of them are limited in the laboratory with application problems. Finally, the prospect on the application and development tendency of improved catalytic chemical vapor deposition technique is put forward in the rapid low cost fabrication of C/C composites in the future.

Characterization of boron nitride thin films synthesized by plasma-assisted chemical vapor deposition technique

1996 ◽  
Vol 54 ◽  
pp. 638-639
Author(s):  
J. Liu ◽  
S. H. Lin ◽  
B. J. Feldman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

Boron nitride (BN) is a well-known non-oxide ceramic that has interesting and useful properties for potential industrial applications. The attractive properties of BN include its high-temperature shock stability, high electrical resistivity, anisotropic thermal conductivity and desirable mechanical properties. The potential uses of BN films include oxidation-resistant and anti-corrosive coatings, sensors, optical devices, and high temperature electronics. Thin films of BN have been obtained by a variety of growth techniques including sputtering, ion plating, evaporation, and chemical vapor deposition and associated techniques. To optimize the growth parameters and the performance of BN films, advanced electron microscopy techniques have been employed to study the structural evolution of BN films synthesized by plasma assisted chemical vapor deposition technique (PACVD).The BN films were grown in a capacitively coupled rf plasma reactor with a feedstock of diborane (B2H6), ammonia (NH3), and hydrogen (H2). The growth parameters were the same as previously reported. Chemical analyses of the grown BN films showed that they had significantly more boron (44 at.%) than nitrogen (33 at.%) and contained a large amount of hydrogen (23 at.%).

A Review of Three Major Factors Controlling Carbon Nanotubes Synthesis from the Floating Catalyst Chemical Vapor Deposition

Nano LIFE ◽  
2019 ◽  
Vol 09 (04) ◽  
pp. 1930002 ◽  
Author(s):  
Daniel Rui Chen ◽  
Megha Chitranshi ◽  
Mark Schulz ◽  
Vesselin Shanov
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Mass Production ◽  
Arc Discharge ◽  
Low Cost ◽  
Chemical Vapor ◽  
Major Factors ◽  
Catalyst Chemical Vapor Deposition

After the discovery of carbon nanotubes (CNTs) by Sumio Iijima in 1991, several methods have been developed to synthesize them. High-temperature techniques, such as laser ablation and arc discharge, are now replaced by a low-temperature technique like chemical vapor deposition (CVD). Floating catalyst chemical vapor deposition (FCCVD) method is extensively researched due to its ease of fabrication, mass production at low cost and high purity output. The motive of this paper is to discuss the influence of three major factors on the growth of CNTs using the FCCVD method, which can help us better understand the process of FCCVD as well as the potential challenges faced by this method.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

scholarly journals Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1105
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Muhammad Fahad Ehsan ◽  
Asad Mumtaz ◽  
Manzar Sohail ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Sulfide ◽  
Variable Temperature ◽  
Complex Impedance ◽  
Equivalent Circuit Model ◽  
Chemical Vapor ◽  
Relaxation Processes ◽  
Impedance Plot ◽  
Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

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