Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application

2001 ◽  
Vol 668 ◽  
Author(s):  
T. Wada ◽  
S. Nishiwaki ◽  
Y. Hashimoto ◽  
T. Negami
Keyword(s):  
Solar Cell ◽  
High Temperatures ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Glass Structure ◽  
Open Circuit ◽  
Annealing Process ◽  
Soda Lime Glass ◽  
Post Annealing ◽  
Stage Process

ABSTRACTCu(In,Ga)Se2 thin films were prepared by physical vapor deposition. The CIGS films were deposited by three kinds of method. The 1st was “2-stage process” in which (In,Ga)2Se3 precursor layer was deposited on Mo coated soda-lime glass at the 1st stage, and then exposed to Cu and Se fluxes to form CIGS films at the 2nd stage. The 2nd method was an ordinary “3-stage process”. The 3rd method was “2-stage deposition and post-annealing process” in which CIGS films were deposited at low substrate temperatures and then the obtained CIGS precursor films were annealed in Se flux at high temperatures. A solar cell using a CIGS film prepared at 400 °C by the “2-stage process” showed an efficiency of 11.8 % and that using a CIGS film deposited at 350 °C by the “3-stage process” showed an efficiency of 12.4 %. The CIGS films deposited by the “2-stage deposition and post-annealing process” have similar microstructures to the device quality CIGS films deposited by the “3-stage process” at high temperatures. The solar cell with an MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5 % (Voc=0.634 V, Jsc=36.4 mA/cm2, FF=0.756). The thin CIGS films with a smooth and flat surface can be fabricated by the “2-stage deposition and post-annealing process”. The solar cell using a 0.7μm CIGS absorber layer showed an efficiency of over 12 % and a large open circuit voltage of 0.677 V.

HIT Solar Cell With V2Ox Window Layer

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3147-3156 ◽  
Author(s):  
Erenn Ore ◽  
Gehan Amaratunga ◽  
Stefaan De Wolf
Keyword(s):  
Solar Cell ◽  
Physical Vapor Deposition ◽  
Crystalline Silicon ◽  
Layer Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
Limiting Factors ◽  
Vapor Deposition Technique

ABSTRACTIn the conventional crystalline silicon heterojunction solar cell with the intrinsic thin layer structure (the HIT solar cell), a p-doped thin film silicon or its alloy (pDTF-Si/A) is used as the hole collecting window layer. However, the parasitic absorbance in the pDTF-Si/A window layer, and the toxic, explosive diborane gas used for p-doping are limiting factors for achieving HIT cells with reduced processing costs and / or higher efficiencies. In this work, pDTF-Si/A is replaced by V2Ox, which is deposited by a simple physical vapor deposition technique. Due to the wide band gap of V2Ox, the HIT solar cell with the V2Ox window layer generates a higher short-circuit current density than the reference conventional HIT cell under 1 sun, and achieves an open-circuit voltage of 0.7 V. Furthermore, the charge carrier lifetime and pseudo-efficiency values of the HIT solar cell with the V2Ox window layer indicate that this cell has the potential to outperform the conventional HIT cell in terms of the power conversation efficiency under the standard test conditions.

scholarly journals Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Grace Rajan ◽  
Krishna Aryal ◽  
Shankar Karki ◽  
Puruswottam Aryal ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Open Circuit ◽  
Ex Situ ◽  
Photovoltaic Application ◽  
Current Voltage ◽  
Stage Process ◽  
Cigs Solar Cells ◽  
The Cost

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

Efficient Thin Polymer Solar Cells with Post-Annealing

2007 ◽  
Vol 1031 ◽  
Author(s):  
Shun-Wei Liu ◽  
Chih-Chien Lee ◽  
Ping-Tsung Huang ◽  
Chin-Ti Chen ◽  
Juen-Kai Wang
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Annealing Process ◽  
Solar Cell Performance ◽  
Post Annealing ◽  
Thin Polymer ◽  
Before And After ◽  
Process Annealing

AbstractThe authors report the study of the dependence of the device performance of polymer solar cells based on single 50-nm heterojunction poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methylester (P3HT/PCBM) layer on annealing process. Annealing before and after cathode deposition were performed for comparison. In the case of post-annealing at 150¢XC for 60 min., the device attains a conversion efficiency of 4.9%, a fill factor of 53 %, and an open-circuit voltage of 0.67 V. These values are comparable with the highest values reported previously. The annealing process is expected to modify the network morphology of the P3HT/PCBM layer. This study demonstrates that it is possible to attain good solar cell performance with the combination of single thin active layer and post-annealing treatment. This may open up an opportunity to fabricate tandem polymer solar cells.

scholarly journals Modification of Surface of Basalt Fabric on Protecting Against High Temperatures by the Method of Magnetron Sputtering

2019 ◽  
Vol 19 (1) ◽  
pp. 36-43 ◽  
Author(s):  
Pamela Miśkiewicz ◽  
Iwona Frydrych ◽  
Wojciech Pawlak ◽  
Agnieszka Cichocka
Keyword(s):  
Thermal Properties ◽  
Magnetron Sputtering ◽  
Heat Resistance ◽  
High Temperatures ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Specific Substrate ◽  
Chromium Layer ◽  
Contact Heat ◽  
Fabric Surface

Abstract Basalt fibers and fabrics made of these are characterized by excellent thermal and mechanical properties. Therefore, basalt fabrics, due to a good resistance to high temperatures, are frequently applied in the personal protection equipment (PPE). In order to improve their thermal properties and, above all, the contact heat resistance, the process of physical vapor deposition was proposed. The process of Physical Vapor Deposition (PVD) involves producing a coating on a specific substrate as a result of physical deposition of molecules, ions or atoms of the selected chemical compounds. The method selected for the test is the magnetron sputtering. It involves depositing a uniform film of chromium on the surface of the basalt fabric. In order to improve the thermal properties – especially the contact heat resistance, two values of thickness of the chromium layer deposited on the basalt fabric surface were adopted for the test. Covering 1 μm and 5 μm with the chromium layer did not fulfil the expectations and the research will be continued.

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