Structural and Optical Properties of Highly Efficient 2- μm Thick CdS/CdTe Thin Film Solar Cells

2001 ◽  
Vol 668 ◽  
Author(s):  
K. Nakamura ◽  
M. Gotoh ◽  
T. Fujihara ◽  
T. Toyama ◽  
H. Okamoto

ABSTRACTThe structural and optical properties of CdS/CdTe(S) interface region of 2-μm thick CdS/CdTe solar cells have been studied in conjunction with photovoltaic performances of the solar cells. The properties are found to be crucially influenced by the annealing temperature and oxygen concentration of the CdCl2 treatment. An increase in VOC and F.F. found in the solar cells with the CdCl2 treatment at < 360°C is interpreted as due to suppression of interdiffusion of sulfur and tellurium at the CdS/CdTe(S) interface. On the other hand, the electromodulated photoluminescence with UV light excitation (UVE-EMPL) study reveals that the increasing VOC due to increasing oxygen concentration to 5% is likely to be caused by an increase in the built-in electric field in n+-CdTe1−xSx just adjacent to the CdS/CdTe(S) interface. As a result of the modification of the process parameters, we have achieved the conversion efficiency of 13.6% (VOC: 0.817V, JSC: 23.0 mA/cm2, F.F.: 0.725) using 2.3-μm thick PV active layer without anti-reflection coating.

2019 ◽  
Vol 2 (2) ◽  
pp. 1419-1427 ◽  
Author(s):  
Budhika G. Mendis ◽  
Quentin M. Ramasse ◽  
Thomas P. Shalvey ◽  
Jonathan D. Major ◽  
Ken Durose

2016 ◽  
Vol 852 ◽  
pp. 799-804
Author(s):  
Meng Jiang ◽  
Zuo Lei Liu ◽  
Zhi Lei ◽  
Qiong Yi Gu ◽  
Jian Guo Zhu

The large area CdTe thin film samples were used for chloride annealing. The CuCl2/NH4Cl solution was attached on the CdTe surface. After annealing treatment, the CdTe solar cells were prepared. The structure of the thin films and the properties of the CdTe solar cells were tested for studying the effect of the ratio of Cu/Cl, solution concentration and the annealing temperature. At last the performance of CuCl2/NH4Cl annealing cells, ZnTe back contact cells and C:Te,Cu back contact cells were compared. Without back contact layers the efficiency of the CdTe solar cells reached 11.13% with chloride annealing.


2010 ◽  
Vol 1268 ◽  
Author(s):  
Mao-Hua Du

AbstractForming a chemically stable low-resistance back contact for CdTe thin film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back contact material, Sb2Te3, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb2Te3 back contacts.


2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Alaa Ayad Al-mebir ◽  
Paul Harrison ◽  
Ali Kadhim ◽  
Guanggen Zeng ◽  
Judy Wu

Anin situthermal annealing process (iTAP) has been introduced before the commonex situcadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.


2019 ◽  
Vol 92 ◽  
pp. 319-329 ◽  
Author(s):  
L.I. Nykyruy ◽  
R.S. Yavorskyi ◽  
Z.R. Zapukhlyak ◽  
G. Wisz ◽  
P. Potera

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