Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System

2001 ◽  
Vol 672 ◽  
Author(s):  
Sang Y. Kang ◽  
Cheol S. Hwang ◽  
Hyeong J. Kim
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Injection System ◽  
Organic Chemical ◽  
Si Substrates ◽  
Liquid Injection ◽  
Liquid Source ◽  
Metal Organic ◽  
Direct Liquid Injection

ABSTRACTRu thin films were deposited on SiO2/Si and (Ba,Sr)TiO3 [BST]/Pt/TiO2/SiO2/Si substrates using Ru(C2H5C5H4)2 [Ru(EtCp)2] by metal-organic chemical vapor deposition (MOCVD). To determine the effects of the solvent, C4H8O [tetrahydrofuran: THF], it was injected into the reaction chamber by the Direct Liquid Injection (DLI) system while Ru(EtCp)2 was input through the bubbler system. Also, Ru thin films were deposited using a liquid source, Ru(EtCp)2 dissolved in THF, delivered by the DLI system. The surface of the Ru thin films deposited on the BST substrate using only Ru(EtCp)2 through the bubbler system was very rough and milky, but the addition of THF made the surface of the films smooth and clean. In addition, Ru films deposited at 325°C using Ru(EtCp)2 dissolved in THF through the DLI system have a dense and smooth microstructure with resistivity as low as 15µωcm.

Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

2002 ◽  
Vol 748 ◽  
Author(s):  
R. Ganster ◽  
S. Hoffmann-Eifert ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Pulse Mode ◽  
Injection System ◽  
Organic Chemical ◽  
Single Element ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Liquid Precursors ◽  
Metal Organic

ABSTRACTWe report on the growth of Ba(Ti1-xZrx)O3 thin films on Pt(111) / TiO2 / SiO2 / Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet® vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti0.63Zr0.37)O3 films were successfully grown on platinum coated silicon substrates at temperatures around 630°C.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

1995 ◽  
Vol 10 (9) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y.Q. Li ◽  
J. Zhang ◽  
S. Pombrik ◽  
S. DiMascio ◽  
W. Stevens ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Organic Solution ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

scholarly journals Alumina layer using low-cost direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on AISI 1018 steel

2020 ◽  
Vol 18 (3) ◽  
Author(s):  
Javier Serrano Pérez ◽  
Fernando Juárez López ◽  
Edgar Serrano Pérez
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Liquid Injection ◽  
Metal Organic ◽  
Chamber Temperature ◽  
Direct Liquid Injection ◽  
Organic Chemical Vapor Deposition ◽  
Mocvd Technique

Amorphous alumina layers were deposited on low carbon steel (AISI 1018) substrates by the direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) technique. For the DLI- MOCVD technique, two temperatures were used: a vaporization chamber temperature of 180 °C and a reaction chamber temperature of 370 °C. Liquid precursor aluminum tri-sec-butoxide was introduced in form of atomized liquid, each pulse of 1 Hz frequency and 3 ms opening time, the solution was pressurized at 40 psi under inert Argon atmosphere. 200 sccm of Argon were used as continuous carrier gas during all the deposition process. Microscopy and XRD techniques were used to characterize the deposited material. The thickness of the alumina coatings was of 100 μm, approximately.

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