The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4141-4145 ◽  
Author(s):  
Huang-Chin Chen ◽  
Umesh Palnitkar ◽  
Huan Niu ◽  
Hsiu-Fung Cheng ◽  
I-Nan Lin
Keyword(s):  
Ion Implantation ◽  
Field Emission ◽  
Structural Damage ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Emission Measurement ◽  
Before And After ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 1013–1014 ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.

Electron Emission Properties of Si Field Emitter Arrays Coated With Nanocrystalline Diamond From Fullerene Precursors

1997 ◽  
Vol 498 ◽  
Author(s):  
T. G. McCauley ◽  
T. D. Corrigan ◽  
A. R. Krauss ◽  
O. Auciello ◽  
D. Zhou ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Threshold Field ◽  
Field Emitter ◽  
Effective Work ◽  
Field Emitter Arrays ◽  
Electron Field

ABSTRACTIn this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

Optoelectronic characterization of morphology-controlled zinc oxide nanowires

2011 ◽  
Vol 1315 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Fang-I Lai ◽  
Chun-Chieh Wang ◽  
Woei-Tyng Lin
Keyword(s):  
Field Emission ◽  
Visible Region ◽  
Chemical Vapor ◽  
Growth Time ◽  
Emission Measurement ◽  
Oxide Nanowires ◽  
Average Reflectance ◽  
Vertically Aligned ◽  
Metal Catalyzed

ABSTRACTIn this paper, we report the characterization of vertically aligned ZnO nanowire (NW) arrays synthesized by metal-catalyzed chemical vapor deposition. The growth mechanism of ZnO NWs may be related to vapor-solid-nucleation. Morphological, structural, optical and field emission characteristics can be modified by varying the growth time. For growth time reaches 120 min, the length and the diameter of ZnO NWs are 1.5 μm and 350 nm, and they also show preferential growth orientation along the c-axis. Moreover, strong alignment and uniform distribution of ZnO NWs can effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region as well. Field emission measurement indicated that the growth time play an important role in density- and morphology-controlled ZnO NWs, and thus ZnO NWs are expected to be used in versatile optoelectronic devices.

Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

2021 ◽  
Vol 55 (1) ◽  
pp. 66-75
Author(s):  
A. L. Vikharev ◽  
S. A. Bogdanov ◽  
N. M. Ovechkin ◽  
O. A. Ivanov ◽  
D. B. Radishev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

Study of the Adhesion and Biocompatibility of Nanocrystalline Diamond (NCD) Films on 3C-SiC Substrates

2009 ◽  
Vol 1203 ◽  
Author(s):  
Humberto Gomez ◽  
Christopher L. Frewin ◽  
Ashok Kumar ◽  
Stephen Saddow ◽  
Christopher Locke
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Grain Structure ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Fixed Cell

AbstractThe unique material characteristics of silicon carbide (SiC) and nanocrystalline diamond (NCD) present solutions to many problems in conventional MEMS applications and especially for biologically compatible devices. Both materials have a wide bandgap along with excellent optical, thermal and mechanical properties. Initial experiments were performed for NCD films grown on 3C-SiC using a microwave plasma chemical vapor deposition (MPCVD) reactor. It was observed from the atomic force microscopy (AFM) analysis that the NCD films on 3C-SiC possess a more uniform grain structure, with sizes ranging from approximately 5 – 10 nm, whereas on the Si surface, the NCD has large, non-unioform inclusions of grains ≈1 μm in size. The in vitro biocompatibility performance of NCD/3C-SiC was measured utilizing 2 immortalized neural cell lines: H4 human neuroglioma (ATCC #HTB-148) and PC12 rat pheochromocytoma (ATCC #CRL-1721). MTT (3-(4,5-Dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) assay was used to measure viability of the cells for 96 hours and live/ fixed cell. AFM was performed to determine the general cell morphology. The H4 cell line shows a good biocompatibility level with hydrogen treated NCD as compared with the cell treated polystyrene control well, while the PC12 cells show decreased viability on the NCD surfaces.

The Field Emission of Globe-Like Diamond Microcrystalline Aggregate Films

2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Current Density ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Turn On

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.

scholarly journals Doped Nanocrystalline Diamond Films as Reflective Layers for Fiber-Optic Sensors of Refractive Index of Liquids

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2124 ◽  
Author(s):  
Monika Kosowska ◽  
Daria Majchrowicz ◽  
Kamatchi J. Sankaran ◽  
Mateusz Ficek ◽  
Ken Haenen ◽  
...  
Keyword(s):  
Refractive Index ◽  
Fiber Optic ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Fiber Optic Sensors ◽  
Nanocrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped ◽  
Interferometric Sensor

This paper reports the application of doped nanocrystalline diamond (NCD) films—nitrogen-doped NCD and boron-doped NCD—as reflective surfaces in an interferometric sensor of refractive index dedicated to the measurements of liquids. The sensor is constructed as a Fabry–Pérot interferometer, working in the reflective mode. The diamond films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition system. The measurements of refractive indices of liquids were carried out in the range of 1.3 to 1.6. The results of initial investigations show that doped NCD films can be successfully used in fiber-optic sensors of refractive index providing linear work characteristics. Their application can prolong the lifespan of the measurement head and open the way to measure biomedical samples and aggressive chemicals.

Investigation of the Field Emission Stability of Sphere-Like Diamond Microcrystalline-Aggregates Films

2014 ◽  
Vol 1035 ◽  
pp. 3-6
Author(s):  
Jin Hai Gao ◽  
Zhen Li ◽  
Wu Qing Zhang
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Diffraction Spectrum ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Field Emission Properties

The sphere-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti metal layer was used as substrates. The fabricated diamond microcrystalline aggregates were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the sphere-like diamond microcrystalline-aggregates films exhibited good electron emission properties. The turn-on field was only 0.55V/μm, and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. After several cycling operations, the field emission tended to stable characteristics of current versus voltage. The stability evolvement and mechanism are investigated relating to microstructure of the sphere-like diamond microcrystalline-aggregates films.

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

Sign in / Sign up

Export Citation Format

Share Document