Optically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells

2001 ◽  
Vol 685 ◽  
Author(s):  
Wei Chen ◽  
Bhushan Sopori ◽  
Kim Jones ◽  
Robert Reedy ◽  
N. M. Ravindra ◽  
...  
Keyword(s):  
Grain Orientation ◽  
Deposition Temperature ◽  
Crystallization Front ◽  
Low Cost ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractOptically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC – in particular, whether the metal can be confined to the interface while grain enhancement occurs.

Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates

2007 ◽  
Vol 26-28 ◽  
pp. 623-628 ◽  
Author(s):  
Dong Nyung Lee
Keyword(s):  
Annealing Temperature ◽  
Chemical Vapor ◽  
Film Plane ◽  
Directed Crystallization ◽  
Random Orientation ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.

Metal-induced crystallization of hydrogenated amorphous Si films

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 953-955 ◽  
Author(s):  
C.C. Tsai ◽  
R.J. Nemanich ◽  
M.J. Thompson ◽  
B.L. Stafford
Keyword(s):  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

scholarly journals Low Temperature Nickel Induced Crystallization of Amorphous Silicon Nanorods on Silicon and Glass Substrates

2020 ◽  
Vol 2 (2) ◽  
pp. 164-169
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Nanorod Arrays ◽  
Simple Method ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
3D Integrated Circuits ◽  
Induced Crystallization

In this work, crystallization of amorphous silicon (a-Si) nanorods was done by metal induced crystallization (MIC) method at low temperature (500oC) suitable for circuit applications and low cost, disposable biosensors. The crystallization of a-Si nanorods was investigated by Raman and TEM methods. These data showed oriented crystallized Si nanorods have been obtained by metal induced crystallization (MIC) method on different substrates, which can be suitable for 3D integrated circuits, optical and electrochemical applications. This simple method can be used to produce silicon nanorod arrays with high quality suitable for nanoelectronic and optoelectronic applications.

Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

2013 ◽  
Vol 652-654 ◽  
pp. 1765-1768
Author(s):  
Xiao Lei Qu ◽  
Jing Jin ◽  
Wei Min Shi ◽  
Yu Feng Qiu ◽  
Lu Huang ◽  
...  
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Spin Coating ◽  
Annealing Process ◽  
Crystalline Fraction ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.

scholarly journals Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Kaoru Toko ◽  
Mitsuki Nakata ◽  
Atsushi Okada ◽  
Masato Sasase ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Crystal Orientation ◽  
High Efficiency ◽  
Low Cost ◽  
Functional Materials ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Influence Of Substrate ◽  
Si Films ◽  
Induced Crystallization

Producing large-grained polycrystalline Si (poly-Si) film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C) Al-induced crystallization (AIC). The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100) was preferred for Al-doped-ZnO (AZO) and indium-tin-oxide (ITO); (111) was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

High temperature metal-induced crystallization of r.f. sputtered amorphous Si thin films

1976 ◽  
Vol 37 (3) ◽  
pp. 429-440 ◽  
Author(s):  
J.E. Greene ◽  
L. Mei
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization

scholarly journals Metal-Induced Crystallization Mechanism of Amorphous Si0.OGe0.4 Thin Film

Materia Japan ◽  
2004 ◽  
Vol 43 (12) ◽  
pp. 1010-1010
Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano
Keyword(s):  
Thin Film ◽  
Crystallization Mechanism ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization
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