Characterization of (Ba,Sr)RuO3 Films Deposited by Metal-organic Chemical Vapor Deposition

AbstractThin film electrodes of the perovskite oxide (Ba,Sr)RuO3 (BSR) were deposited on 4 inch ptype Si wafers by metal organic chemical vapor deposition (MOCVD) for the practical (Ba,Sr)TiO3 (BST) capacitor application using a new single cocktail source. The source materials used for the MOCVD BSR process were Ba(METHD)2, Sr(METHD)2 and Ru(METHD)3 and these were dissolved in n-butyl acetate. The source-feeding rate was precisely controlled by liquid mass flow controllers (LMFC). As-deposited BSR films possessed a (110)-oriented structure, with good uniformity and adherence on bare Si wafer. The phase formation was strongly affected by the oxygen flow rate and the input source rate. As the oxygen flow rate increased, the Ru/(Ba+Sr) composition ratio in the film decreased, while the Ba/(Ba+Sr) ratio was almost independent of the oxygen flow rate. The dielectric constants of BST capacitors fabricated using these electrodes was greater than 500.

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Multifunctional oxide nanostructures by metal-organic chemical vapor deposition (MOCVD)

Pure and Applied Chemistry ◽

10.1351/pac-con-08-08-10 ◽

2009 ◽

Vol 81 (8) ◽

pp. 1523-1534 ◽

Cited By ~ 7

Author(s):

François Weiss ◽

Marc Audier ◽

Ausrine Bartasyte ◽

Daniel Bellet ◽

Cécile Girardot ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Scale ◽

Perovskite Oxide ◽

Organic Chemical ◽

Oxide Materials ◽

Oxide Nanostructures ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

The development of thin films, in the context of ongoing reduction in the size of electronic systems, poses challenging questions for the materials sciences of multifunctional nanostructures. These include the limits of size reduction, integration of heterogeneous functions, and system characterization or process control at an atomic scale. We present here different studies devoted to perovskite oxide materials (or materials with derived structure), where in specific directions of the crystal structure the atomic organization decreases down to a few nanometers, thus building nanostructures. In these materials, very original physical phenomena are observed in multilayers or superlattices, nanowires (NWs) or nanodots, mainly because strain, surfaces, and interfaces play here a predominant role and can tune the physical properties. Metal-organic chemical vapor deposition (MOCVD) routes have been used for the synthesis of oxide materials. We first introduce the basic rules governing the choice of metal-organic precursors for the MOCVD reaction. Next we discuss the principles of the pulsed injection MOCVD system. A laser-assisted MOCVD system, designed to the direct growth of 2D and 3D photonic structures, will also be described. Selected case studies will finally be presented, illustrating the powerful development of different oxide nanostructures based on dielectric, ferroelectric, or superconducting oxides, manganites, and nickelates, as well as first results related to the growth of ZnO NWs.

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EFFECT OF CAPPING LAYER ON InxGa1-xN QUANTUM DOTS GROWN USING NNAD METHOD BY MOCVD

International Journal of Nanoscience ◽

10.1142/s0219581x09005876 ◽

2009 ◽

Vol 08 (01n02) ◽

pp. 197-201

Author(s):

HEON SONG ◽

R. NAVAMATHAVAN ◽

SEONG-MUK JEONG ◽

SEON-HO LEE ◽

JIN-SU KIM ◽

...

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Flow Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Capping Layer ◽

Nitridation Time ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

In x Ga 1-x N quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the In x Ga 1-x N QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100–200 nm by flow rate. And In x Ga 1-x N QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of In x Ga 1-x N QDs was discussed.

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