Nature of Charged Metastable Defects in Network Rebonding Model
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AbstractWe recently developed an atomistic model of metastability of a-Si:H, where defect creation is driven by the breaking of weak silicon bonds. The kinetics of degradation in this model is simulated with coupled rate equations that show t1/3 kinetics of defect creation and saturation behavior similar to experiment. Saturated defect densities of neutral dangling bonds are accompanied by a much smaller density of negatively charged floating bonds and positively charged dangling bonds (D+). We propose a two-step annealing mechanism where the positively charged D+ dangling bonds are annealed at low temperature and the D0 at higher temperature -which accounts for hysteresis in mobility lifetime products.
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1980 ◽
Vol 45
(12)
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pp. 3402-3407
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Keyword(s):
1990 ◽
Vol 55
(7)
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pp. 1678-1685
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2005 ◽
Vol 36
(2)
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pp. 195-199
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1954 ◽
Vol 43
(9)
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pp. 530-535
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