Recombination Lifetime in Microcrystalline Silicon Absorbers of Highly Efficient Thin-Film Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
Torsten Brammer ◽  
Helmut Stiebig

AbstractAbsorber layers of microcrystalline silicon thin-film solar cells deposited by plasma-enhanced chemical vapor deposition are characterized regarding the recombination lifetime. The characterization is based on a comparison of experimentally determined solar cell characteristics with results from numerical device simulations. Evaluation of the dark reverse saturation current indicates a strong dependence of τ on the hydrogen dilution during the deposition. Close to the transition region to amorphous growth where the highest solar cell efficiencies are observed τ is maximum within the crystalline deposition regime and equals 30 ns.

2011 ◽  
Vol 1327 ◽  
Author(s):  
Dong Won Kang ◽  
Jong Seok Woo ◽  
Sung Hwan Choi ◽  
Seung Yoon Lee ◽  
Heon Min. Lee ◽  
...  

ABSTRACTWe have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.


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