Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix

2002 ◽  
Vol 717 ◽  
Author(s):  
George E. Cirlin ◽  
Nikolai D. Zakharov ◽  
Peter Werner ◽  
Alexander G. Makarov ◽  
Andrei F. Tsatsul'nikov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Growth Parameter ◽  
Multilayer Structures ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractSi/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy. Their structural and optical properties are investigated in detail. Appropriate growth parameter of the stacked island structures lead to significant increasing of the luminescence efficiency even at room temperature.

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

2017 ◽  
Vol 51 (2) ◽  
pp. 267-271 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
Yu. S. Polubavkina ◽  
V. N. Nevedomskiy ◽  
E. V. Nikitina ◽  
A. A. Lazarenko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

scholarly journals Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Structural And Optical Properties

scholarly journals Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2110
Author(s):  
Olga Yu. Koval ◽  
Vladimir V. Fedorov ◽  
Alexey D. Bolshakov ◽  
Sergey V. Fedina ◽  
Fedor M. Kochetkov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Nanowire Array ◽  
Growth Mechanisms ◽  
Structural And Optical Properties ◽  
Rubber Membrane ◽  
Transmission Electron ◽  
The Difference ◽  
Photoluminescence Studies

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document