scholarly journals Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2110
Author(s):  
Olga Yu. Koval ◽  
Vladimir V. Fedorov ◽  
Alexey D. Bolshakov ◽  
Sergey V. Fedina ◽  
Fedor M. Kochetkov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Nanowire Array ◽  
Growth Mechanisms ◽  
Structural And Optical Properties ◽  
Rubber Membrane ◽  
Transmission Electron ◽  
The Difference ◽  
Photoluminescence Studies

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

scholarly journals Argon irradiation effects on the structural and optical properties of reactively sputtered CrN films

2015 ◽  
Vol 47 (2) ◽  
pp. 187-194 ◽  
Author(s):  
M. Novakovic ◽  
M. Popovic ◽  
N. Bibic
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Optical Parameters ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The present study deals with CrN films irradiated at room temperature (RT) with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive sputtering on Si (100) wafers, at nitrogen partial pressure of 5?10-4 mbar, to a total thickness of 280 nm. The substrates were held at 150?C during deposition. After deposition the CrN layers were irradiated with 200 keV Ar+ ions to the fluences of 5?1015 - 2?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and X-ray diffraction (XRD). Spectroscopic ellipsometry measurements were carried out in order to study optical properties of the samples. The irradiations caused the microstructrual changes in CrN layers, but no amorphization even at the highest argon fluence of 2?1016 ions/cm2. Observed changes in microstructure were correlated with the variation in optical parameters. It was found that both refractive index and extinction coefficient are strongly dependent on the defect concentration in CrN layers.

Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix

2002 ◽  
Vol 717 ◽  
Author(s):  
George E. Cirlin ◽  
Nikolai D. Zakharov ◽  
Peter Werner ◽  
Alexander G. Makarov ◽  
Andrei F. Tsatsul'nikov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Growth Parameter ◽  
Multilayer Structures ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractSi/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy. Their structural and optical properties are investigated in detail. Appropriate growth parameter of the stacked island structures lead to significant increasing of the luminescence efficiency even at room temperature.

Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

2012 ◽  
Vol 620 ◽  
pp. 368-372 ◽  
Author(s):  
Saleh H. Abud ◽  
Hassan Zainuriah ◽  
Fong Kwong Yam ◽  
Alaa J. Ghazai
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural and optical properties of grown film have been characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). Indium-mole fraction has been computed to be 0.27 using XRD data and Vegards law with high grain size and low tensile strain. Room-temperature photoluminescence revealed an intense peak at 534 nm (2.3 eV) related to our sample In0.27Ga0.73N.

Influence of doping on crystal growth, structure and optical properties of nanocrystalline CaTiO3: a case study using small-angle neutron scattering

2015 ◽  
Vol 48 (3) ◽  
pp. 836-843 ◽  
Author(s):  
Oindrila Mondal ◽  
Manisha Pal ◽  
Ripandeep Singh ◽  
Debasis Sen ◽  
Subhasish Mazumder ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Crystal Growth ◽  
Small Angle Neutron Scattering ◽  
Ionic Radius ◽  
Ionic Radii ◽  
Growth Structure ◽  
Transmission Electron ◽  
The Difference

The effect of dopant size (ionic radius) on the crystal growth, structure and optical properties of nanocrystalline calcium titanate, CaTiO3(CTO), have been studied using small-angle neutron scattering. X-ray diffraction, along with high-resolution transmission electron microscopy, confirms the growth of pure nanocrystalline CTO. Rietveld analysis reveals that the difference of ionic radii between dopant and host ions induces strain within the lattice, which significantly affects the lattice parameters. The induced strain, due to the difference of ionic radii, causes the shrinkage of the optical band gap, which is manifested by the redshift of the absorbance band. Mesoscopic structural analysis using scattering techniques demonstrates that the ionic radius of the dopant influences the agglomeration behaviour and particle size. A high-resolution transmission electron microscopy study reconfirms the formation of pure highly crystalline CTO nanoparticles.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Structural and Optical Properties of In-Plane Ordered Metallo-Phthalocyanine Thin Films Formed on Sapphire by Organic Molecular Beam Deposition

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3884-3888 ◽  
Author(s):  
Takayoshi Hayashi ◽  
Tohru Maruno ◽  
Akira Yamashita ◽  
Stefan Fölsch ◽  
Hirohisa Kanbara ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Molecular Beam Deposition ◽  
Beam Deposition
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