Structure-Property Relationships in W Doped (Ba,Sr)TiO3 Thin Films Deposited by Pulsed Laser Deposition on (001) MgO

2002 ◽  
Vol 720 ◽  
Author(s):  
N. Navi ◽  
J.S. Horwitz ◽  
H.-D. Wu ◽  
S.B. Qadri
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Lattice Parameters ◽  
Laser Deposition ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Deposition Pressure ◽  
Structure Property Relationships ◽  
Plane Lattice ◽  
Out Of Plane

AbstractBaxSr(1-x)TiO3 films (BST) with x=0.5, 0.6, 0.7, containing 1% W, were grown by pulsed laser deposition on MgO (001) substrates in an oxygen pressure from 3 to 500 mTorr, at a substrate temperature of 720 C. The crystal structure of the film, as determined from x-ray diffraction, was fit to a tetragonal distortion of a cubic lattice having two in-plane lattice parameters. The in and out-of-plane lattice parameters c, a, á, and lattice distortion (a/c and á/c) were calculated from the positions of the measured BST reflections ((004), (024) and (224)). The dielectric properties of the film at 2 GHz were measured using gap capacitors deposited on top of the dielectric film, at room temperature. For all compositions, as a function of the oxygen deposition pressure, a peak in the change in the dielectric constant, as a function of an applied electric field (0 – 80 kV/cm), was observed for films deposited in 50 mTorr of oxygen. Unlike the pure BST, the dielectric Q was insensitive to the oxygen deposition pressure. The largest Kfactor (K=(ε(0)-ε(V)/ε(0) x Q(0)) for films deposited from Ba0.6Sr0.4TiO3 target were observed in a film that had a minimum in-plane strain, where a~á.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

scholarly journals Structure and Magnetization of Strontium Hexaferrite (SrFe12O19) Films Prepared by Pulsed Laser Deposition

2021 ◽  
Vol 8 ◽  
Author(s):  
M. Khojaste khoo ◽  
P. Kameli
Keyword(s):  
Pulsed Laser Deposition ◽  
Quantum Interference ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Strontium Hexaferrite ◽  
X Ray Diffraction ◽  
Oriented Growth ◽  
X Ray ◽  
Out Of Plane

M-type strontium hexaferrite (SrM) thin films show excellent magnetic properties and uniaxial magnetic anisotropy. We systematically investigated the magnetism of SrM films prepared by pulsed-laser deposition on different substrates [Al2O3 (11¯02), SrTiO3 (100), ZnO (0001), and LiNbO3 (0001)] at vacuum (10−4 Pa) and a substrate temperature of 800°C. Prepared films were annealed in air at a temperature of 1,000°C for 2 hours. This investigation determined the effect of annealing and different substrates on the morphology, strain, and hysteresis loops of the films. The prepared films were characterized using x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, and superconducting quantum interference device (SQUID) magnetometry. X-ray diffraction analyses confirmed c-oriented growth along the out-of-plane direction in most films. We found that annealing causes enhanced crystallization in films and a significant increase in coercivity. The highest coercivity of ∼11 KOe was measured for the film deposited on the Al2O3 (11¯02) substrate.

Hydrostatic and Biaxial Strain in BaxSr1-xTiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
C. M. Carlson ◽  
P. A. Parilla ◽  
T. V. Rivkin ◽  
J. D. Perkins ◽  
D. S. Ginley
Keyword(s):  
Pulsed Laser Deposition ◽  
Residual Strain ◽  
Pulsed Laser ◽  
Lattice Parameters ◽  
Laser Deposition ◽  
Strain Component ◽  
Biaxial Strain ◽  
Rocking Curve ◽  
Out Of Plane ◽  
Bst Films

AbstractWe grew BaxSr1−xTiO3 (BST) films on MgO single crystal substrates by pulsed laser deposition (PLD). We report the in-plane (a) and out-of-plane (c) lattice parameters of BST films deposited in a range of O2 deposition pressures [P(02)], as measured by asymmetric rocking curve diffraction. As P(O2) increases, the films' biaxial strain changes from compression (a < c), to cubic (a = c), and then to tension (a > c). Furthermore, both a and c are larger than the lattice constant for bulk BST of the same composition. This indicates the presence of a hydrostatic strain component in addition to the biaxial component. From the measured lattice parameters, we calculate the total residual strain in terms of biaxial and hydrostatic components. We also examine the effects of a post-deposition anneal. Characterizing residual strain and understanding its origin(s) are important since strain affects the dielectric properties of BST films and thereby the properties of devices which incorporate them.

A Tetragonal Phase in Cr(N,O) Thin Film Prepared by Pulsed Laser Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 1006-1009
Author(s):  
Jun Inoue ◽  
Tadachika Nakayama ◽  
Tsuneo Suzuki ◽  
Hisayuki Suematsu ◽  
Wei Hua Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Tetragonal Phase ◽  
Pulsed Laser ◽  
Axial Ratio ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Out Of Plane ◽  
O Phase

Chromium oxynitride (Cr(N,O)) thin film have been successfully prepared by using pulsed laser deposition. The composition of the thin film was determined to be Cr0.50N0.23O0.28 by Ruthreford backscattering spectroscopy (RBS). The structural analysis was carried out by using X-ray diffraction (XRD), and out-of-plane and in-plane measurements were used to clarify the axial ratio (c/a) of the Cr(N,O) phase. The lattice constants of a and c axes in the Cr(N,O) phase were found to be 0.414 and 0.419 nm, respectively. From these results, the cubic to tetragonal phase change by substitution of the oxygen atoms for nitrogen atoms was confirmed for the crystal Cr(N,O) compounds.

scholarly journals Structure property relationships in gallium oxide thin films grown by pulsed laser deposition

2016 ◽  
Vol 6 (04) ◽  
pp. 348-353 ◽  
Author(s):  
Lauren M. Garten ◽  
Andriy Zakutayev ◽  
John D. Perkins ◽  
Brian P. Gorman ◽  
Paul F. Ndione ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gallium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Structure Property Relationships ◽  
Image Position

Abstract

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Structural Analysis of CdO2(1-X) AlX Thin Films Prepared by Pulsed-Laser Deposition

2021 ◽  
Vol 19 (10) ◽  
pp. 34-40
Author(s):  
B.Y. Taher ◽  
A.S. Ahmed ◽  
Hassan J. Alatta
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Doping Concentration ◽  
Pulsed Laser ◽  
Interplanar Distance ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Diffraction Angle ◽  
Standard Value ◽  
Diffraction Patterns

In this study, CdO2 (1-X) AlX thin films were prepared by pulsed-laser deposition. The X-ray diffraction patterns reveal that the films were polycrystalline with a cubic structure, and the composition of the material changed from CdO at the target to CdO2 in the deposited thin films. The intensity of the diffraction peak (or the texture factor) decreases with increasing hkl and has a maximum value for the (111) plane, the interplanar distance and diffraction angle has a high deviation from the standard value for the (111) plane and. This deviation is affected by doping concentration and shows its highest deviation at a doping concentration of 0.1 wt.% for the (111) and (200), and the 0.3 and 0.5 wt.% for the (210) and (220) planes, respectively. The crystalline size take a less value at plane has a high texture factor that is (111) plane and decreases with increase the doping concentration.

Magnetite/Nickel andMagnetite/Cobalt Multilayer Nanostructures Obtained by Pulsed Laser Deposition

2003 ◽  
Vol 777 ◽  
Author(s):  
Monica Sorescu ◽  
Agnieszka Grabias ◽  
Lucian Diamandescu
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Multilayer Nanostructures ◽  
Mean Grain Size ◽  
Different Temperatures ◽  
The Mean ◽  
Metal Layers ◽  
Magnetite Phase

AbstractNanostructured magnetite/T multilayers, with T = Ni, Co, Cr, have been prepared by pulsed laser deposition. The thickness of individual magnetite and metal layers takes values in the range of 5 - 40 nm with a total multilayer thickness of 100 -120 nm. X-ray diffraction has been used to study the phase characteristics as a function of thermal treatment up to 550 °C. Small amounts of maghemite and hematite were identified together with prevailing magnetite phase after treatments at different temperatures. The mean grain size of magnetite phase increases with temperature from 12 nm at room temperature to 54 nm at 550 °C. The thermal behavior of magnetite in multilayers in comparison with powder magnetite is discussed.

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