New Magnetic Materials Produced By The Sol-Gel Process: A Possibility Of Producing Exotic Devices

1986 ◽  
Vol 73 ◽  
Author(s):  
G. Kordas
Keyword(s):  
Line Width ◽  
Sol Gel ◽  
Resonance Field ◽  
Relaxation Mechanism ◽  
Hydrogen Atmosphere ◽  
Film Plane ◽  
Local Fields ◽  
Oxide Thin Film ◽  
Sol Gel Process ◽  
Oriented Parallel

ABSTRACTFerromagnetic resonance (FMR) spectra of an iron-oxide thin film with a thickness of 70 A were recorded between 100 and 410 K at 9.5 GHz after heat treatment at about 500 °C in hydrogen atmosphere. The FMR-signal of this film consisted of two components (A and B) when the film plane was oriented parallel to the external fieTp The intensity of these components is not proportional toT3/2 in the range from 100 to 410 K. The line width of the A-component is determined by inhomogeneities in the magnetic structure. The line width of the B-component may be influenced by the spin-spin relaxation mechanism and skin effect. The temperature behavior of the resonance field of the A- and B-components was tentatively attributed to variation of the local fields with the temperature of measurements.

Investigation of Annealing Effect on the Electrical and Optical Properties of ITO Film Prepared by Sol-Gel Process

2011 ◽  
Vol 84-85 ◽  
pp. 431-435
Author(s):  
Jing Li ◽  
Xiao Dong Zhao
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Visible Spectrum ◽  
Annealing Effect ◽  
Oxide Thin Film ◽  
Electrical And Optical Properties ◽  
Ito Film ◽  
Rapid Annealing ◽  
Sol Gel Process ◽  
Ito Films

Indium tin oxide thin film (ITO film) has been deposited onto the quartz glass by a sol-gel process, followed by annealing in air. The temperature range from 200 to 800 °C and the annealing effect on the optical, electrical and structural properties of ITO films has been studied in detail. ITO Films with a thickness of 100nm had an optical transparency up to 90% in the wavelength range of visible spectrum. The ITO film showed minimum resistivity of 1.65×10-3Ω.cm-1 when annealing temperature was 600°C in air. the rapid annealing process may contribute to the electrical property of ITO film for the densification of the micro structure. but the process may lead to the decrease of transparency for the reflection caused by grain boundary.

On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process

2007 ◽  
Vol 280-283 ◽  
pp. 835-838
Author(s):  
Gang Du ◽  
Dao Li Zhang ◽  
Lan Zhao ◽  
Jian Mei Xu ◽  
Dong Xiang Zhou
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Tin Oxide ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Coated Glass Substrate ◽  
Sol Gel Process ◽  
Different Temperatures ◽  
Tin Oxide Films

Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Ω/□

scholarly journals Alcohol sensing of tin oxide thin film prepared by sol-gel process

2002 ◽  
Vol 25 (3) ◽  
pp. 231-234 ◽  
Author(s):  
Sunita Mishra ◽  
C. Ghanshyam ◽  
Nathai Ram ◽  
Satinder Singh ◽  
R. P. Bajpai ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Sol Gel Process

X-ray Absorption and NMR Studies of LiNiCoO2 Cathodes Prepared by a Participate Sol-Gel Process

1997 ◽  
Vol 496 ◽  
Author(s):  
S. Rostov ◽  
Y. Wang ◽  
M. L. denBoer ◽  
S. Greenbaum ◽  
C. C. Change ◽  
...  
Keyword(s):  
Line Width ◽  
Sol Gel ◽  
Transition Metal Ions ◽  
Spin Lattice Relaxation ◽  
Nmr Studies ◽  
Teller Distortion ◽  
X Ray ◽  
Sol Gel Process ◽  
X Ray Absorption ◽  
Absorption Measurements

AbstractWe have synthesized lithiated nickel oxide-based cathode materials containing stoichiometric and excess lithium using a new low temperature colloidal paniculate sol-gel process. The process yields a xerogel precursor that transforms to the crystalline oxide at 800 °C in 2h. We studied the Li environment with nuclear magnetic resonance (NMR) and that of the transition metal ions with x-ray absorption spectroscopy. We measured samples of LiNi1−xCoxO2, with x = 0 and 0.25. The effect on each composition of the incorporation of 5 mol % Li was also examined. The precursor material appears to have no Ni3+, as indicated x-ray absorption measurements, and is highly disordered, showing little sign of interatomic correlations beyond the nearest neighbor in extended x-ray absorption fine structure (EXAFS) spectra. The 7Li NMR line widths and spin-lattice relaxation (T1) behavior are dominated by strong interactions with the paramagnetic Ni3+. The presence of 5 % excess Li causes almost no change in NMR line width or T1 in the mixed (Ni/Co) cathode, but does produce an almost 30% reduction in line width for the pure LiNiO2, implying that Co stabilizes the structure. The near-edge x-ray absorption measurements show the local Ni environment is relatively unaffected by Co substitution, a result confirmed by EXAFS analysis. The heat-treated samples are highly ordered, and both the near-edge and extended analysis imply Co substitutes primarily for Ni2+, not Ni3+. The Jahn-Teller distortion is apparent in both the stoichiometric and Li-excess materials.

scholarly journals Preparation of Electrochromic Tungsten Oxide Thin Film by Sol-Gel Process.

1999 ◽  
Vol 107 (1243) ◽  
pp. 199-203 ◽  
Author(s):  
Keishi NISHIO ◽  
Tadanori SEI ◽  
Toshio TSUCHIYA
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Sol Gel Process
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