Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

ABSTRACTWe have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

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Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

Journal of the Korean Physical Society ◽

10.3938/jkps.55.24 ◽

2009 ◽

Vol 55 (1) ◽

pp. 24-27 ◽

Cited By ~ 1

Author(s):

SoonIl Jung ◽

Ilgu Yun ◽

JooIn Lee ◽

IlKi Han

Keyword(s):

Optical Properties ◽

Quantum Dot ◽

Superluminescent Diodes ◽

Self Assembled ◽

Inas Quantum Dot

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Polymorphic gallium for active resonance tuning in photonic nanostructures: from bulk gallium to two-dimensional (2D) gallenene

Nanophotonics ◽

10.1515/nanoph-2020-0314 ◽

2020 ◽

Vol 9 (14) ◽

pp. 4233-4252

Author(s):

Yael Gutiérrez ◽

Pablo García-Fernández ◽

Javier Junquera ◽

April S. Brown ◽

Fernando Moreno ◽

...

Keyword(s):

Optical Properties ◽

Room Temperature ◽

Phase Change Materials ◽

Two Dimensional ◽

Active Materials ◽

Promising Candidate ◽

Plasmonic Structures ◽

Resonance Tuning ◽

The Many ◽

Optical Behavior

AbstractReconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very promising candidate for adaptive plasmonics and reconfigurable photonics applications. The Ga sp-metal is widely known as a liquid metal at room temperature. In addition to the many other compelling attributes of nanostructured Ga, including minimal oxidation and biocompatibility, its six phases have varying degrees of metallic character, providing a wide gamut of electrical conductivity and optical behavior tunability. Here, the dielectric function of the several Ga phases is introduced and correlated with their respective electronic structures. The key conditions for optimal optical modulation and switching for each Ga phase are evaluated. Additionally, we provide a comparison of Ga with other more common phase-change materials, showing better performance of Ga at optical frequencies. Furthermore, we first report, to the best of our knowledge, the optical properties of liquid Ga in the terahertz (THz) range showing its broad plasmonic tunability from ultraviolet to visible-infrared and down to the THz regime. Finally, we provide both computational and experimental evidence of extension of Ga polymorphism to bidimensional two-dimensional (2D) gallenene, paving the way to new bidimensional reconfigurable plasmonic platforms.

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