The Microstructure of Co Nanoparticles Directly Deposited on Si (001) Substrates Using DC Magnetron Sputtering

2002 ◽  
Vol 737 ◽  
Author(s):  
Bing-Xian Chung ◽  
Chuan-Pu Liu ◽  
Jiun-Nan Chen
Keyword(s):  
Magnetron Sputtering ◽  
Cobalt Nanoparticles ◽  
Nanoparticle Array ◽  
Substrate Bias ◽  
Dc Magnetron Sputtering ◽  
Substrate Distance ◽  
Resolution Electron ◽  
Size Uniformity ◽  
Co Nanoparticles ◽  
Nanotube Growth

ABSTRACTDispersive cobalt nanoparticles are fabricated directly on Si (001) substrates by DC magnetron sputtering at room temperature. During deposition, the parameters chosen for the investigation are substrate bias (from +525 To –100 Volts), target-to-substrate distance (from 6 to 12 cm) and deposition time (from 10 to 30m sec), while the other parameters are kept the same, including the power of 50 watts. Atomic force microscope (AFM) is employed to determine the density and morphology of cobalt nanoparticles whereas high-resolution electron microscope (HRTEM) is used to visualize the resulting microstructure in the nanoparticles. It is found that Co nanoparticle array can be formed by combining the optimum substrate bias and target-to-substrate distance. The size uniformity of the nanoparticle array can be enhanced by positive bias due to charging effects. The nanoparticle of as small as a few nanometers can be successfully fabricated by DC-sputtering and can be applied to nanotube growth as catalysts.

scholarly journals Growth of Silver Nanoparticles by DC Magnetron Sputtering

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
P. Asanithi ◽  
S. Chaiyakun ◽  
P. Limsuwan
Keyword(s):  
Magnetron Sputtering ◽  
Ag Nanoparticles ◽  
Deposition Time ◽  
Transmission Electron Microscopy Image ◽  
Synthesis Methods ◽  
Morphology Evolution ◽  
Dc Magnetron Sputtering ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Size Uniformity

Silver (Ag) nanoparticles are of great interest for many applications. However, their fabrications have been limited by the synthesis methods in which size, shape, and aggregation are still difficult to control. Here, we reported on using direct current (DC) magnetron sputtering for growing Ag nanoparticles on unheated substrates. Effects of sputtering condition on grain size of Ag nanoparticle were discussed. At constant sputtering current and deposition time, the average sizes of Ag nanoparticles were 5.9 ± 1.8, 5.4 ± 1.3, and 3.8 ± 0.7 nm for the target-substrate distances of 10, 15, and 20 cm, respectively. The morphology evolution from nanoparticles to wormlike networks was also reported. High-resolution transmission electron microscopy image represented clear lattice fringes of Ag nanoparticles with a d-spacing of 0.203 nm, corresponding to the (200) plane. The technique could be applied for growth of nanoparticles that were previously difficult to control over size and size uniformity.

Comparative Study of the Properties between Transparent Conducting ZnO:Zr and ZnO:Al Films Deposited by DC Magnetron Sputtering

2011 ◽  
Vol 284-286 ◽  
pp. 2182-2186 ◽  
Author(s):  
Hua Fu Zhang ◽  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Transparent Conducting ◽  
Maximum Value ◽  
Better Than

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4Ω·cm and 5.7×10-4Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2Ω for ZnO:Zr films lower than 5×10-2Ω for ZnO:Al films.

Synthesis of Coatings With Hardness Exceeding 40 GPa by Magnetron Sputtering

1998 ◽  
Vol 120 (2) ◽  
pp. 179-183 ◽  
Author(s):  
Mei-Ling Wu ◽  
Zunde Yang ◽  
Yip-Wah Chung ◽  
Ming-Show Wong ◽  
William D. Sproul
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Volume Fraction ◽  
High Resolution Electron Microscopy ◽  
Substrate Bias ◽  
Cathode Sputtering ◽  
Lattice Match ◽  
Wetting Properties ◽  
Resolution Electron ◽  
Composition Structure

Single- and dual-cathode DC magnetron sputtering was used to produce TiB2 coatings and CNx/ZrN multilayers, respectively, with hardness exceeding 40 GPa. The composition, structure, topography, and mechanical properties were determined by various techniques, including Auger electron spectroscopy, X-ray diffraction, high-resolution electron microscopy, atomic force microscopy, and nanoindentation. An optimum combination of the sputtering pressure and substrate bias results in the production of ultrasmooth TiB2 coatings with hardness up to 50 GPa and excellent wetting properties. The rationale for studying the CNx/ZrN system is that ZrN(111) provides excellent lattice match to the hypothetical β-C3N4(0001) face (β-C3N4 was predicted to have mechanical properties comparable to diamond). Using a dual-cathode sputtering system, we produced crystalline multilayers of CNx/ZrN with bilayer thickness of 1–2 nm. Using various combinations of nitrogen partial pressure, target powers, and substrate bias, we found that the hardness of these coatings correlates very strongly with the occurrence of (111) texture of ZrN, consistent with the lattice-match strategy. Even with a ZrN volume fraction of 70 percent, such multilayer coatings have been synthesized with hardness in the 50 GPa regime.

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