Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy
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ABSTRACTOn the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.
2012 ◽
Vol 51
(1)
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pp. 01AF05
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1987 ◽
Vol 134
(2)
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pp. 470-474
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2014 ◽
Vol 407
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pp. 52-57
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2004 ◽
Vol 270
(3-4)
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pp. 384-395
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2008 ◽
Vol 5
(6)
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pp. 1719-1722
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