1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
K. Hyodo ◽  
Y. Ohno ◽  
H. Kanamori ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Room Temperature ◽  
Molecular Beam ◽  
Polarization Degree ◽  
Self Organized ◽  
Best Value ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Quantum Well Layer

ABSTRACTHigh quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

scholarly journals InP and InGaAs grown on InP substrate by molecular beam epitaxy

2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Strongly Correlated ◽  
Inp Substrate ◽  
Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

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