Improved Electrical Properties in Nanocrystalline Si Formed by Metal Induced Growth

2003 ◽  
Vol 762 ◽  
Author(s):  
Chunhai Ji ◽  
Wayne A. Anderson
Keyword(s):  
Electrical Properties ◽  
Doping Level ◽  
Short Circuit ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Working Pressure ◽  
Si Films ◽  
P Type

AbstractIn recent work, the electrical properties of metal-induced-grown (MIG) Si thin films were studied by using current-voltage (I-V) data from a metal/Si Schottky contact. It was found that controlling the doping level of the films and annealing in forming gas (15% H2 and 85% N2) can improve the quality of the nc-Si films. From SIMS analysis on the nc-Si film deposited from a highly doped target, the nc-Si can duplicate the doping level of the sputtering target. Study of p-type doped nc-Si films showed that the fabrication of Schottky diodes on nc-Si films made from an extremely high-doped target (∼1020 cm-3) or low-doped target (∼1015cm-3) was not successful. For highly doped p-type films, tunneling causes Ohmic conduction instead of rectifying conduction. For the nc-Si film deposited from a low-doped p-type target, the film shows conversion to n-type characteristics when measured by a hot probe. This might be due to defects or oxygen in the film. N-type films at the middle doping level (∼1017cm-3) gave good Schottky diodes after annealing the film in forming gas at 700°C. The Schottky diodes fabricated by high work-function metal (Au) gave the rectifying ratio of ~∼103. Several techniques, e.g. slow/fast two-step sputtering at low working pressure and surface polishing, were used to improve the photo response of Schottky photodiodes. The open-circuit voltage (Voc) of 0.164V and short-circuit current density (Jsc) of 2.5 mA/cm2 were achieved under 100mW/cm2 illumination.

The Influence of Nanoparticle Fillers on the Effectiveness of Phosphorus Diffusion Pastes

2015 ◽  
Vol 138 (1) ◽  
Author(s):  
Rudolf Nüssl ◽  
Josef Biba ◽  
David Britton
Keyword(s):  
Doping Level ◽  
Silicon Nanoparticles ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Functional Additives ◽  
Current Voltage ◽  
Current Densities ◽  
P Type

A phosphosilicate polymer spin-on glass dopant has been adapted to produce a screen printable N-type diffusion pastes using different types of nanoparticles as functional additives to quantitatively change the doping strength of the paste. Strong qualitative and quantitative differences in the resulting phosphorous concentration profiles after diffusion have been found between different compositions. Not only is an intermediate doping level obtainable if silicon nanoparticles are used instead of silica but also a shallower dopant depth is also achieved. The electrical quality of the layer formed by diffusing phosphorus into the surface of a P-type silicon wafer has been investigated by the fabrication and testing of P-N junction solar cells. The devices exhibit diodelike current–voltage (IV) characteristics with open-circuit voltages of 0.437 V and 0.523 V and short-circuit current densities of 1.88 mA/cm2 and 4.78 mA/cm2 indicating a low doping level of the cell emitter and a relatively high series resistance of the junction.

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

Solar Cell Contacts Using Nano-Sized Dispersions

1999 ◽  
Vol 581 ◽  
Author(s):  
Doug Schulz ◽  
R. Ribelin ◽  
X. Wu ◽  
K.M. Jones ◽  
R.J. Matson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spray Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Cdte Layer ◽  
Open Circuit ◽  
Alloy Formation ◽  
Current Densities ◽  
P Type ◽  
Open Circuit Voltages

ABSTRACTNano-sized dispersions have been employed as precursor inks for the spray deposition of contacts to both Si and CdTe materials. In the case of Si, nano-sized Al particles (nano-Al) were dispersed and spray deposited onto p-type Si. Annealing above the eutectic temperature causes alloy formation yielding a p+ layer with p ∼ 10−4 Ω•cm. For CdTe, nano-sized Te particles (nano-Te) were dispersed and sprayed onto CdTe/CdS/SnO2/glass heterostructures. Contact to the CdTe layer occurred during a 30 min anneal in He (T = 215 to 255 °C). These solar cells were finished by spin-coating the Te layer with Ag paint and subsequently annealing in air (100 °C / 1 h). This approach produces solar cells with open circuit voltages (Voc) from 720 to 800 mV, short circuit current densities (Jsc) from 18 to 20 mA/cm2 and efficiencies up to 10.3%. The performance of these cells was similar to those produced using the standard NREL contact.

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

2011 ◽  
Vol 399-401 ◽  
pp. 1477-1480
Author(s):  
Yan Li Xu ◽  
Jin Hua Li
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Textured Surface ◽  
Si Solar Cell ◽  
The One ◽  
P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

PHOTOELECTRICAL PROPERTIES OF p-TYPE AND n-TYPE ELECTRICAL CONDUCTIVITY AMORPHOUS CARBON THIN FILMS FOR APPLICATION IN ECONOMICAL CARBON-BASED SOLAR CELLS

2005 ◽  
Vol 12 (03) ◽  
pp. 343-350 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Energy Conversion ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Short Circuit ◽  
Wavelength Region ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Photon Absorption ◽  
P Type

The successful deposition of boron ( B )-doped p-type ( p-C:B ) and phosphorous ( P )-doped n-type ( n-C:P ) carbon ( C ) films, and fabrication of p-C:B on silicon ( Si ) substrate ( p-C:B/n-Si ) and n-C:P/p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (V oc ) and short circuit current density (J sc ) for p-C:B/n-Si are observed to vary from 230–250 mV and 1.5–2.2 mA/cm2, respectively, and to vary from 215–265 mV and 7.5–10.5 mA/cm2, respectively, for n-C:P/p-Si cells. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 Bwt% shows highest energy conversion efficiency, η = 0.20%, and fill factor, FF = 45%, while, the n-C:P/p-Si cell with the amount of P by 7 Pwt% shows highest energy conversion efficiency, η = 1.14%, and fill factor, FF = 41%. The quantum efficiencies (QE) of the p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with Bwt% and Pwt%, respectively. The contributions of QE are suggested to be due to photon absorption by carbon layer in the lower wavelength region (below 750 nm) and Si substrates in the higher wavelength region. The dependence of B and P content on the electrical and optical properties of the deposited films, and the photovoltaic characteristics of the respective p-C:B/n-Si and n-C:P/p-Si heterojunction photovoltaic cells, are discussed.

scholarly journals Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

2018 ◽  
Vol 9 ◽  
pp. 3 ◽  
Author(s):  
Xianghua Zhang ◽  
Ilia Korolkov ◽  
Bo Fan ◽  
Michel Cathelinaud ◽  
Hongli Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chalcogenide Glass ◽  
Glass Ceramic ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Iodine Doping ◽  
P Type ◽  
Photovoltaic Solar Cells

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3and n-type Sb2Se3. The conductivity of Sb2Se3has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3and the glass-ceramic thin films give a short-circuit current density JSCof 10 mA/cm2and an open-circuit voltage VOCof 255 mV, with a power conversion efficiency of about 0.9%.

Simulation of Symmetrically Doped Silicon Nanowire Solar Cells

2011 ◽  
Vol 1322 ◽  
Author(s):  
Felix Voigt ◽  
Thomas Stelzner ◽  
Silke H. Christiansen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Cylindrical Symmetry ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Back Surface ◽  
Cell Efficiency ◽  
P Type

ABSTRACTSilicon nanowire solar cells were simulated using the Silvaco TCAD software kit. For optimization of speed the simulations were performed in cylinder coordinates with cylindrical symmetry. Symmetric doping was assumed with a dopant density of 1018 cm-3 in the p-type core and inside the n-type shell. In the implementation a cathode contact was wrapped around the semiconductor nanorod and an anode was assumed at the bottom of the rod. Optimization of cell efficiency was performed with regard to the rod radius and the rod length. In both optimization processes clear maxima in efficiency were visible, resulting in an optimal radius of 66 nm with the pn junction at 43.5 nm and an optimal rod length of about 48 μm. The maximum of efficiency with respect to the rod radius is due to a decrease of short-circuit current density (Jsc) and an increase of open-circuit voltage (Uoc) with radius, while the maximum with respect to the rod length is explained by the combination of an increase of Jsc and a decrease of Uoc. Fill factors stay rather constant at values between 0.6 and 0.8. Further, the influence of a back surface field (BSF) layer was surveyed in simulations. Positioning the BSF next to the cathode contact considerably improved cell efficiency. In addition, simulations with a cathode contact on top of the nanowire structure were undertaken. No severe deterioration of cell performance with increasing radius was observed so far in this configuration. Hence, nanorods with much larger radii can be used for solar cells using this contact scheme. In comparison to simulations with wrapped cathode contacts, Jsc and Uoc and therefore efficiency is considerably improved.

scholarly journals Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso
Keyword(s):  
Solar Cell ◽  
Doping Level ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Performance ◽  
P Type

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

Extremely Thin Absorber Layers in Solid State Solar Cells

2004 ◽  
Vol 822 ◽  
Author(s):  
A. Bellaidi ◽  
K. Ernst ◽  
R. Könenkamp
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Optical And Electrical Properties ◽  
Transfer Rates ◽  
Ideal Tool ◽  
Extremely Thin Absorber

AbstractWe report on recent progress in fabricating an inorganic solid state solar cell based on a nano-structured substrate with an extremely thin absorber, the so-called eta-cell. The cell uses HgCdTe as an absorber layer and TiO2 as a substrate. By adjusting the Hg/Cd ratio the conduction band edges in these two materials can be brought into alignment. This tuning provides an ideal tool to optimize the optical and electrical properties of the cell. In qualitative agreement with earlier work we find a band offset of 0.25 eV to give maximum transfer rates across the interface. The optimized cell has a short circuit current of 15 mA/cm2 and an open-circuit voltage of 0.6 V. We discuss the optical and electrical properties of the cell, and outline ideas to further improve the performance.

Nanocoral PbS Films Schottky Solar Cell

2014 ◽  
Vol 925 ◽  
pp. 605-609 ◽  
Author(s):  
A.S. Obaid ◽  
Alaa Ahmed Dihe ◽  
B.M. Salih ◽  
Z. Hassan ◽  
Y. Al-Douri ◽  
...  
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
Thermal Evaporator ◽  
P Type

This study reports on the fabrication of a Schottky solar cell with a cross-sectional schematic: ITO/PbS/Al with a commercial transparent conductive ITO and a p-type PbS absorber layer deposited by using a thermal evaporator. The structural and optical properties of constituent films are presented. X-ray diffraction showed that the thin films are polycrystalline. By using scanning electron microscopy, this study showed that the films possessed a uniform surface morphology over the substrate, and the films exhibit a nanocoral structure. Open circuit voltage,short-circuit current density and characteristics were studied under 30 mW/cm2 solar radiation.

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