Nanocoral PbS Films Schottky Solar Cell

This study reports on the fabrication of a Schottky solar cell with a cross-sectional schematic: ITO/PbS/Al with a commercial transparent conductive ITO and a p-type PbS absorber layer deposited by using a thermal evaporator. The structural and optical properties of constituent films are presented. X-ray diffraction showed that the thin films are polycrystalline. By using scanning electron microscopy, this study showed that the films possessed a uniform surface morphology over the substrate, and the films exhibit a nanocoral structure. Open circuit voltage,short-circuit current density and characteristics were studied under 30 mW/cm2 solar radiation.

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Optimization of Electrical Performance of Defected n+-p-p+ Solar Cell with CdS/BaSi2/Cu2O Heterostructure Using SCAPs 1D

10.21203/rs.3.rs-1180128/v1 ◽

2022 ◽

Author(s):

Zohaib Ali ◽

Khuram Ali

Keyword(s):

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Electrical Performance ◽

Maximum Efficiency ◽

Photovoltaic Devices ◽

Layer Width ◽

P Type

Abstract Present study investigates the performance of BaSi2 based BSF structure solar cell. SCAPS 1D simulator has been employed to investigate the heterostructure solar cell. To decrease the recombination loss due to minority carrier, a new configuration is proposed by inclusion of the p-type cuprous oxide (Cu2O) as BSF layer. The Cu2O BSF layer width varying in range 0.1 to 0.4 µm to analyze the feasibility of device for optimum performance. The anticipated structure consists of ZnO/CdS/BaSi2/Cu2O layers and offers the maximum efficiency of above 24%. Parameters for example open circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), conversion efficiency (η) and quantum efficiency (QE) of the device have been analyzed graphically. The optimized structure may have significant impact on future development of advanced photovoltaic devices.

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CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200213 ◽

2020 ◽

Vol 92 (2) ◽

pp. 20901

Author(s):

Abdul Kuddus ◽

Md. Ferdous Rahman ◽

Jaker Hossain ◽

Abu Bakar Md. Ismail

Keyword(s):

Solar Cell ◽

Short Circuit ◽

Photovoltaic Performance ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Heterojunction Solar Cell ◽

Back Surface ◽

Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

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Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

IOP Conference Series Earth and Environmental Science ◽

10.1088/1755-1315/877/1/012001 ◽

2021 ◽

Vol 877 (1) ◽

pp. 012001

Author(s):

Marwah S Mahmood ◽

N K Hassan

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Current Density ◽

Short Circuit ◽

Perovskite Solar Cells ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Current Voltage ◽

Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

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Optimized Thin-Film Organic Solar Cell with Enhanced Efficiency

Sustainability ◽

10.3390/su132313087 ◽

2021 ◽

Vol 13 (23) ◽

pp. 13087

Author(s):

Waqas Farooq ◽

Muhammad Ali Musarat ◽

Javed Iqbal ◽

Syed Asfandyar Ali Kazmi ◽

Adnan Daud Khan ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Organic Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Bragg Reflector ◽

Performance Parameters ◽

Distributed Bragg Reflector

Modification of a cell’s architecture can enhance the performance parameters. This paper reports on the numerical modeling of a thin-film organic solar cell (OSC) featuring distributed Bragg reflector (DBR) pairs. The utilization of DBR pairs via the proposed method was found to be beneficial in terms of increasing the performance parameters. The extracted results showed that using DBR pairs helps capture the reflected light back into the active region by improving the photovoltaic parameters as compared to the structure without DBR pairs. Moreover, implementing three DBR pairs resulted in the best enhancement gain of 1.076% in power conversion efficiency. The measured results under a global AM of 1.5G were as follows: open circuit voltage (Voc) = 0.839 V; short circuit current density (Jsc) = 10.98 mA/cm2; fill factor (FF) = 78.39%; efficiency (η) = 11.02%. In addition, a thermal stability analysis of the proposed design was performed and we observed that high temperature resulted in a decrease in η from 11.02 to 10.70%. Our demonstrated design may provide a pathway for the practical application of OSCs.

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High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

Modern Physics Letters B ◽

10.1142/s0217984920500530 ◽

2019 ◽

Vol 34 (04) ◽

pp. 2050053

Author(s):

Fatemeh Ghavami ◽

Alireza Salehi

Keyword(s):

Solar Cell ◽

Band Gap ◽

High Efficiency ◽

Cell Structure ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Absorber Layer ◽

Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

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Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.601 ◽

2011 ◽

Vol 378-379 ◽

pp. 601-605 ◽

Cited By ~ 1

Author(s):

Saleh N. Alamri ◽

M. S. Benghanem ◽

A. A. Joraid

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Fused Silica ◽

Vacuum System ◽

Cdte Thin Film

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.

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Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

International Journal of Modern Physics B ◽

10.1142/s0217979218500145 ◽

2018 ◽

Vol 32 (02) ◽

pp. 1850014 ◽

Cited By ~ 5

Author(s):

G. S. Sahoo ◽

G. P. Mishra

Keyword(s):

Solar Cell ◽

Quantum Efficiency ◽

Conversion Efficiency ◽

Internal Quantum Efficiency ◽

Spectral Response ◽

Short Circuit ◽

Cost Effective ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

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Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.399-401.1477 ◽

2011 ◽

Vol 399-401 ◽

pp. 1477-1480

Author(s):

Yan Li Xu ◽

Jin Hua Li

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Ion Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Textured Surface ◽

Si Solar Cell ◽

The One ◽

P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

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Silicon nanowires solar cell

MRS Proceedings ◽

10.1557/opl.2011.330 ◽

2011 ◽

Vol 1305 ◽

Author(s):

Xiaobing Xie ◽

Xiangbo Zeng ◽

Wenjie Yao ◽

Ping Yang ◽

Shiyong Liu ◽

...

Keyword(s):

Solar Cell ◽

Silicon Nanowires ◽

Short Circuit ◽

Nanowire Array ◽

Chemical Vapor ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Type Layer ◽

Si Nanowire Array

ABSTRACTWe made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.

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