Suppression of Electrical Breakdown in Silicon Nitride Films Deposited by Catalytic Chemical Vapor Deposition at Temperatures Below 200 °C

2011 ◽  
Vol 11 (1) ◽  
pp. 815-819
Author(s):  
Kyoung-Min Lee ◽  
Wan-Shick Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electrical Breakdown ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

2007 ◽  
Vol 1036 ◽  
Author(s):  
Stephan Warnat ◽  
Markus Hoefer ◽  
Lothar Schaefer ◽  
Helmut Foell ◽  
Peter Lange
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electrical Breakdown ◽  
Morphological Structure ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Nitride Films ◽  
Deposition Processes ◽  
Silicon Vias

AbstractSilicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
K. Higashimine ◽  
H. Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition ◽  
Flat Interface ◽  
Silicon Nitride Films ◽  
Catalytic Cvd

AbstractThis paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

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