Theoretical Investigation of Twist Boundaries in Germanium
Keyword(s):
ABSTRACTResults of the first completely ab-initio investigation of the microscopic structure of a grain boundary in a semiconductor are presented. Using the molecular dynamics simulated annealing method for performing total energy calculations within the LDA and pseudopotential approximations, the σ=5(001) twist boundary in germanium is studied. A low energy structure is identified which exhibits a rigid body translation and a small contraction at the boundary.
Keyword(s):
2010 ◽
Vol 48
(4)
◽
pp. 773-782
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2018 ◽
Vol 03
(01n02)
◽
pp. 1850001
◽