Superconducting Mbtallic Supkrlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
Charles M. Falco ◽  
Ruggero Vaglio ◽  
Annamaria Cucolo
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
London Penetration Depth ◽  
X Ray Diffraction ◽  
Josephson Tunneling ◽  
X Ray ◽  
Analysis Techniques ◽  
Beam Analysis ◽  
Superlattice Layer

ABSTRACTSince the coherence length is of order 50 Å to 1 μm, it is possible to alternately layer thin films of a superconductor with another material to affect the physical properties of the resulting superlattice. A brief description of our sputtering technique used to prepare superlat t ices consisting of Nb/Cu and Ta/Mo is given. Optical interferometry, x-ray diffraction and ion beam analysis techniques independently confirm that control of ±0.3% is achieved over the amount of material deposited in each layer. Results of a study of Josephson tunneling to Nb/Cu metallic super lattices are reviewed. These measurements enable a determination of the London penetration depth to be made as a function of superlattice layer thickness.

Structure of MgO/V/MgO(001) thin films studied by the combination of X-ray photoemission and ion beam analysis techniques

2006 ◽  
Vol 600 (2) ◽  
pp. 497-506 ◽  
Author(s):  
E. Román ◽  
Y. Huttel ◽  
M.F. López ◽  
R. Gago ◽  
A. Climent-Font ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Analysis Techniques ◽  
Beam Analysis

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique

1995 ◽  
Vol 39 ◽  
pp. 637-643
Author(s):  
J. Chaudhuri ◽  
F. Hashmi
Keyword(s):  
Thin Films ◽  
Diffraction Theory ◽  
Scanning Electron Microscopy Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Multiple Layer ◽  
Crystal Model ◽  
Microscopy Data ◽  
Secondary Extinction

In this study, the equations based on x-ray diffraction theory were developed to determine the thickness of multiple layer thin films. The kinematical expression of the integrated reflected intensity from the substrate and films was corrected for the primary and secondary extinction effects assuming a mosaic crystal model. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AIGaAs/GaAs, were determined. Good agreement was obtained between the results from the x-ray measurement and scanning electron microscopy data demonstrating high precision of this technique.

scholarly journals Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

2008 ◽  
Vol 516 (23) ◽  
pp. 8447-8452 ◽  
Author(s):  
A. Redondo-Cubero ◽  
R. Gago ◽  
F. González-Posada ◽  
U. Kreissig ◽  
M.-A. di Forte Poisson ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis

Obtaining the structure factors for an epitaxial film using Cu X-ray radiation

2013 ◽  
Vol 46 (6) ◽  
pp. 1749-1754 ◽  
Author(s):  
P. Wadley ◽  
A. Crespi ◽  
J. Gázquez ◽  
M.A. Roldán ◽  
P. García ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Structure Factor ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Structure Factors ◽  
Scanning Transmission

Determining atomic positions in thin films by X-ray diffraction is, at present, a task reserved for synchrotron facilities. Here an experimental method is presented which enables the determination of the structure factor amplitudes of thin films using laboratory-based equipment (Cu Kα radiation). This method was tested using an epitaxial 130 nm film of CuMnAs grown on top of a GaAs substrate, which unlike the orthorhombic bulk phase forms a crystal structure with tetragonal symmetry. From the set of structure factor moduli obtained by applying this method, the solution and refinement of the crystal structure of the film has been possible. The results are supported by consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2−xFexO3

2016 ◽  
Vol 49 (4) ◽  
pp. 1308-1314 ◽  
Author(s):  
Christophe Lefevre ◽  
Alexandre Thomasson ◽  
Francois Roulland ◽  
Vincent Favre-Nicolin ◽  
Yves Joly ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Element Distribution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Site Distribution ◽  
X Ray Scattering ◽  
Cationic Distribution ◽  
Cationic Site

The cationic distribution is decisive for both the magnetic and electric properties of complex oxides. While it can be easily determined in bulk materials using classical methods such as X-ray or neutron diffraction, difficulties arise for thin films owing to the relatively small amount of material to probe. It is shown here that a full determination of the cationic site distribution in thin films is possible through an optimized processing of resonant elastic X-ray scattering experiments. The method is illustrated using gallium ferrite Ga2−xFexO3samples which have been the focus of an increasing number of studies this past decade. They indeed represent an alternative to the, to date, only room-temperature magnetoelectric compound BiFeO3. The methodology can be applied to determine the element distribution over the various crystallographic sites in any crystallized system.

In-situ X-ray diffraction investigations of thin films: Determination of thermoelastic constants

2008 ◽  
Vol 2008 (27) ◽  
pp. 253-260
Author(s):  
Y. Kuru ◽  
M. Wohlschlögel ◽  
U. Welzel ◽  
E. J. Mittemeijer
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray
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