Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

2003 ◽  
Vol 772 ◽  
Author(s):  
Emmanuel Valentin ◽  
Stephane Auvray ◽  
Arianna Filoramo ◽  
Aline Ribayrol ◽  
Marcelo Goffman ◽  
...  

AbstractWe describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

2015 ◽  
Vol 3 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Chien-Chung Shih ◽  
Wen-Chang Chen

Self-assembled conjugated rod-coil block copolymer and its nanocomposites with SWCNT could be used as the charge storage layer for high-performance OFET memory devices.


2018 ◽  
Vol 13 (7-8) ◽  
pp. 349-355 ◽  
Author(s):  
D. K. Shishkova ◽  
Yu. I. Khodyrevskaya ◽  
A. G. Kutikhin ◽  
M. S. Rybakov ◽  
R. A. Mukhamadiyarov ◽  
...  

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


2006 ◽  
Vol 501 (1-2) ◽  
pp. 299-302 ◽  
Author(s):  
L. Marty ◽  
A. Iaia ◽  
M. Faucher ◽  
V. Bouchiat ◽  
C. Naud ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Daisuke Ogawa ◽  
Ryo Kitaura ◽  
Takeshi Saito ◽  
Shinobu Aoyagi ◽  
Eiji Nishibori ◽  
...  

Thermally fragile tris(η5-cyclopentadienyl)erbium (ErCp3) molecules are encapsulated in single-wall carbon nanotubes (SWCNTs) with high yield. We realized the encapsulation of ErCp3with high filling ratio by using high quality SWCNTs at an optimized temperature under higher vacuum. Structure determination based on high-resolution transmission electron microscope observations together with the image simulations reveals the presence of almost free rotation of each ErCp3molecule in SWCNTs. The encapsulation is also confirmed by X-ray diffraction. Trivalent character of Er ions (i.e., Er3+) is confirmed by X-ray absorption spectrum.


2001 ◽  
Vol 121 (1-3) ◽  
pp. 1195-1196 ◽  
Author(s):  
H. Kataura ◽  
Y. Maniwa ◽  
T. Kodama ◽  
K. Kikuchi ◽  
K. Hirahara ◽  
...  

Author(s):  
Francisco Torrens ◽  
Gloria Castellano

This paper discusses the existence of single-wall carbon nanocones (SWNCs), especially nanohorns (SWNHs), in organic solvents in the form of clusters. A theory is developed based on a bundlet model describing their distribution function by size. Phenomena have a unified explanation in bundlet model in which free energy of an SWNC, involved in a cluster, is combined from two components: a volume one, proportional to number of molecules n in a cluster, and a surface one proportional to n1/2. Bundlet model enables describing distribution function of SWNC clusters by size. From purely geometrical differences, bundlet (SWNCs) and droplet (fullerene) models predict different behaviours. The SWNCs of various disclinations are investigated via energetic–structural analyses. Several SWNC’s terminations are studied, which are different among one another because of type of closing structure and arrangement. The packing efficiencies and interaction-energy parameters of SWNCs/SWNHs are intermediate between fullerene and single-wall carbon nanotube (SWNT) clusters; an in-between behaviour is expected. However, the properties of SWNCs, especially SWNHs, are calculated close to SWNTs. The structural asymmetry in the different SWNCs, entirely characterized by their cone angle, distinguishes the properties of some, such as P2.


2004 ◽  
Vol 855 ◽  
Author(s):  
S. Gupta ◽  
M. Hughes ◽  
J. Robertson

ABSTRACTElectrochemical tuning of single-wall carbon nanotubes has been investigated using in situ Raman spectroscopy. We built a linear actuator from single-wall carbon nanotube mat and studied in several alkali metal (Li, Na, and K) and alkaline earth (Ca) halide solutions. The variation of bonding with electrochemical biasing was monitored using in situ Raman. This is since Raman can detect changes in C-C bond length: the radial breathing mode (RBM) at ∼190 cm−1 varies inversely with the nanotube diameter and the G band at ∼1590 cm−1 varies with the axial bond length. In addition, the intensities of both the modes vary significantly in a nonmonotonic manner pointing at the emptying/depleting or filling of the bonding and anti-bonding states - electrochemical charge injection. We discuss the variation of spectroscopic observables (intensity/frequency) of these modes providing valuable information on the charge transfer dynamics on the single-wall carbon nanotubes mat surface. We found the in-plane compressive strain (∼ -0.25%) and the charge transfer per carbon atom (fc ∼ -0.005) as an upper bound for the electrolytes used i.e. CaCl2. These results can be quantitatively understood in terms of the changes in the energy gaps between the one-dimensional van Hove singularities in the electron density of states arising possibly due to the alterations in the overlap integral of π bonds between the p orbitals of the adjacent carbon atoms. Moreover, the extent of variation of the absolute potential of the Fermi level or alternatively modification of band gap is estimated from modeling Raman intensity to be around 0.1 eV as an upper bound for CaCl2.


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