Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 799 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Self Organized InAs Quantum Dots on Patterned GaAs Substrates

2005 ◽  
Vol 872 ◽  
Author(s):  
M. Schramboeck ◽  
W. Schrenk ◽  
A. M. Andrews ◽  
T. Roch ◽  
G. Fasching ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gaas Substrate ◽  
Cross Sectional ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Vertically Aligned ◽  
Substrate Patterning

AbstractWe investigate the growth of InAs quantum dots on patterned GaAs substrates. The GaAs substrate has been structured using holographic lithography. Quantum dot formation along the patterns has been observed as well as an increase in homogeneity of the quantum dots. Furthermore, the use of ion beams focused to nanometer diameters for substrate patterning has been studied and showed promising results. For the investigation of vertically aligned InAs quantum dots, cross-sectional atomic force microscopy has been successfully employed.

Mechanism of the Preferential Edge-Positioning of Self-Organized Ge Quantum Dots on Si Mesas

1999 ◽  
Vol 571 ◽  
Author(s):  
G. Jin ◽  
Y.S. Tang ◽  
J.L. Liu ◽  
S.G. Thomas ◽  
K.L. Wang
Keyword(s):  
Quantum Dots ◽  
Field Distribution ◽  
Strain Field ◽  
Compressive Strain ◽  
Raman Spectroscopic ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Ge Quantum Dots

ABSTRACTWe have investigated the preferential positioning of self-organized Ge quantum dots on Si (001) mesas fabricated in a selective epitaxial growth (SEG) mode of gas-source molecular beam epitaxy. The surface morphology was evaluated by atomic force microscopy, and for the Si SEG structures, showed mass accumulation at the periphery. Using micro-Raman spectroscopic imaging, the strain-field distribution of Si structures was studied before Ge deposition, and the results suggest a tensile strain at/near the periphery of the structure while a compressive strain at the center. These structures were subsequently used as a template for Ge dots, which tended to align along the mesa edge. The strain field distribution on Si mesas is speculated to be the driving force for preferential nucleation of Ge dots.

Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vicinal Surface ◽  
Gaas Crystal ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

2018 ◽  
Vol 52 (6) ◽  
pp. 581
Author(s):  
А.С. Пащенко ◽  
Л.С. Лунин ◽  
С.Н. Чеботарев ◽  
М.Л. Лунина
Keyword(s):  
Quantum Dots ◽  
Emission Peak ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Potential Barriers ◽  
Atomic Force ◽  
Gaas Barrier ◽  
Gaas Quantum Dot ◽  
Crystal Lattice Parameters

AbstractThe influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10^10 to 0.93 × 10^10 cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

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