Effects of clustering and dimensionality on the magnetic properties of diluted magnetic semiconductors

2003 ◽  
Vol 794 ◽  
Author(s):  
R. N. Bhatt ◽  
Malcolm. P. Kennett ◽  
Adel Kassaian

ABSTRACTThe magnetic properties of films of diluted magnetic semiconductors (DMS) such as (Ga,Mn)As, as well as bulk grown crystals of similar materials, have been found to be extremely sensitive to growth conditions, both in terms of the ferromagnetic transition temperature, and the details of their magnetization curves. We study an impurity band model for carriers in Mn-doped DMS applicable in the low carrier density regime, and discuss the effects of clustering on the magnetic properties of DMS, using both numerical mean field and Monte Carlo simulations. In addition, we study the effects of dimensionality on the transition temperature and other magnetic behaviour, and compare our results with experimental data.

2011 ◽  
Vol 21 (2) ◽  
pp. 125
Author(s):  
Vu Kim Thai ◽  
Hoang Anh Tuan

The ferromagnetic transition temperature (Tc) of a two band model for diluted magnetic semiconductors (DMS) is calculated by using the coherent potential approximation (CPA). It is shown that Tc is strongly parameter dependent on density of the carriers, magnetic coupling constants, and the hopping terms. The maximal Tc of the two band model is found when both impurity bands fully overlap and this value is approximately twice larger than the highest Tc obtained in the single band model.


2012 ◽  
Vol 2012 ◽  
pp. 1-18 ◽  
Author(s):  
Ying Jiang ◽  
Yong Wang

Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.


1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk

2020 ◽  
Vol 34 (05) ◽  
pp. 2050020
Author(s):  
Younes Ziat ◽  
Maryama Hammi ◽  
Zakaryaa Zarhri ◽  
Charaf Laghlimi ◽  
Rachid Bouachraoui ◽  
...  

The goal of this paper is to study the effect of the small amount of molybdenum-doped [Formula: see text] on the magnetism behavior of that system. We utilized the density functional theory (DFT): DFT framework within MACHIKANEYAMA2002V09 package based on Coherent Potential Approximation (CPA). Inducing the magnetism in the diluted magnetic semiconductors (DMS) with a low dopant concentration at adequate room-temperature is a challenge, so, we restricted the Mo impurity at 2%. In addition, the small amount of Mo-doped [Formula: see text] is found optimal in many studies related to other fields. The ferromagnetic stability is observed in [Formula: see text] system, since the [Formula: see text] state of Mo element is found around the Fermi level and is 100% spin polarized, the half-metallic characteristic is useful in magnetoelectronic applications. Within the mean-field approximation (MFA) we predict the Curie temperature, as an obtained value, the [Formula: see text] K, consequently, the present system showed potential promise for real applications.


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