Structural and Optical Properties of GaN Quantum Dots

2003 ◽  
Vol 798 ◽  
Author(s):  
B. Daudin ◽  
N. Gogneau ◽  
C. Adelmann ◽  
E. Sarigiannidou ◽  
T. Andreev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
Rare Earth Ion ◽  
Carrier Recombination ◽  
Vertical Correlation

ABSTRACTGrowth conditions, structural and optical properties of GaN quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value and on growth temperature, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow or of the Frank-Van der Merwe type. It will be shown that vertical correlation results in a red shift and in a narrowing of the photoluminescence spectra.Growth of Eu-doped GaN quantum dots embedded in AlN will be described. Intense photoluminescence associated with Eu has been measured, with no GaN band-edge emission, as an evidence that carrier recombination mostly occurs through rare earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of temperature has been put in evidence, as a further confirmation of the recombination of confined carriers through Eu ion excitation.

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Kuramata ◽  
S. Yasmazaki ◽  
K. Nakajima
Keyword(s):  
Optical Properties ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Movpe Growth ◽  
The Relationship

ABSTRACTTBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

2010 ◽  
Vol 108 (10) ◽  
pp. 103525 ◽  
Author(s):  
G. E. Dialynas ◽  
S. Kalliakos ◽  
C. Xenogianni ◽  
M. Androulidaki ◽  
T. Kehagias ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties

Binary and Ternary Mercury Chalcogenide Quantum Dots and Clusters

2002 ◽  
Vol 737 ◽  
Author(s):  
Masaru Kuno ◽  
Keith A. Higginson ◽  
Syed B. Qadri ◽  
Mohammad Yousuf ◽  
Benjamin L. Davis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Phase Separation ◽  
Near Infrared ◽  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
High Quality ◽  
Synthetic Strategy ◽  
Simultaneous Use

ABSTRACTThis paper describes the synthesis, characterization and optical properties of binary and ternary mercury chalcogenide quantum dots and clusters. Such materials were made by applying a synthetic strategy involving the simultaneous use of strong Hg(II) coordinating ligands and the explicit phase separation of both metal and chalcogen precursors. High quality QDs and clusters are obtained in this manner with sharply structured absorption and band edge emission covering the visible to near infrared.

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