High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Kuramata ◽  
S. Yasmazaki ◽  
K. Nakajima
Keyword(s):  
Optical Properties ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Movpe Growth ◽  
The Relationship

ABSTRACTTBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Binary and Ternary Mercury Chalcogenide Quantum Dots and Clusters

2002 ◽  
Vol 737 ◽  
Author(s):  
Masaru Kuno ◽  
Keith A. Higginson ◽  
Syed B. Qadri ◽  
Mohammad Yousuf ◽  
Benjamin L. Davis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Phase Separation ◽  
Near Infrared ◽  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
High Quality ◽  
Synthetic Strategy ◽  
Simultaneous Use

ABSTRACTThis paper describes the synthesis, characterization and optical properties of binary and ternary mercury chalcogenide quantum dots and clusters. Such materials were made by applying a synthetic strategy involving the simultaneous use of strong Hg(II) coordinating ligands and the explicit phase separation of both metal and chalcogen precursors. High quality QDs and clusters are obtained in this manner with sharply structured absorption and band edge emission covering the visible to near infrared.

Structural and Optical Properties of GaN Quantum Dots

2003 ◽  
Vol 798 ◽  
Author(s):  
B. Daudin ◽  
N. Gogneau ◽  
C. Adelmann ◽  
E. Sarigiannidou ◽  
T. Andreev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
Rare Earth Ion ◽  
Carrier Recombination ◽  
Vertical Correlation

ABSTRACTGrowth conditions, structural and optical properties of GaN quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value and on growth temperature, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow or of the Frank-Van der Merwe type. It will be shown that vertical correlation results in a red shift and in a narrowing of the photoluminescence spectra.Growth of Eu-doped GaN quantum dots embedded in AlN will be described. Intense photoluminescence associated with Eu has been measured, with no GaN band-edge emission, as an evidence that carrier recombination mostly occurs through rare earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of temperature has been put in evidence, as a further confirmation of the recombination of confined carriers through Eu ion excitation.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

scholarly journals Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

1996 ◽  
Vol 1 ◽  
Author(s):  
E. L. Piner ◽  
F. G. McIntosh ◽  
J. C. Roberts ◽  
M. E. Aumer ◽  
V. A. Joshkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Band Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Double Crystal ◽  
Lattice Constants ◽  
Mocvd Reactor ◽  
Vegard’S Law ◽  
Lattice Matched

High quality InGaN films have led to the development of LEDs and blue lasers. The quaternary AlInGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report on such films grown on (0001) sapphire substrates in an atmospheric pressure MOCVD reactor at 750-800°C. The ternary films have a composition of up to 40% InN and the quaternary films were grown in the composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary compositions studied by EDS and the lattice constants from double crystal XRD followed Vegard's law indicating solid solubility for the range studied. Room temperature PL is dominated by band edge emission for InGaN and AlInGaN, at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels. AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt interfaces. We emphasize the most important growth parameters for the growth of high quality ternary and quaternary thin films. The structural, electrical and optical properties of these In-based ternary and quaternary films and their lattice matched and strained heterostructures will also be presented.

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
Y Park ◽  
M Skowronski
Keyword(s):  
Vibrational Mode ◽  
Deep Level ◽  
Growth Conditions ◽  
Gaas Layer ◽  
Electrical And Optical Properties ◽  
Atomic Structures ◽  
Local Vibrational Mode ◽  
Transient Spectroscopy ◽  
Crystal Electron ◽  
The Relationship

AbstractGaAs epilayers doped with dimethylaluminum methoxide (DMA1MO), an alkoxide bearing a pre-formed Al-O molecule, have been investigated using local vibrational mode (LVM) absorption and deep level transient spectroscopy measurements. LVM measurements indicated that oxygen and aluminum atoms are incorporated into GaAs layer as a complex and remain bound in the volume of the crystal. Electron traps with activation energies of 0.74 and 0.93 eV below the conduction band are main deep level defects responsible for the electrical and optical properties of the layers. Interpretation of the relationship between trap concentration and growth conditions led to the conclusion that the 0.93 and 0.74 eV traps have the atomic structures in which oxygen atom is bonded to one (AlO) and two aluminum atoms (A12O), respectively.

Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

2011 ◽  
Vol 687 ◽  
pp. 585-590
Author(s):  
Feng Lu ◽  
Cheng Hai Xu ◽  
Li Shi Wen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Wurtzite Structure ◽  
Crystal Phase ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x×10-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Synthesis and optical characterization of a high-quality ZnS substrate for optoelectronics and UV solar-energy conversion

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81053-81059 ◽  
Author(s):  
Ching-Hwa Ho ◽  
Min-Han Lin
Keyword(s):  
Solar Energy ◽  
Energy Conversion ◽  
Optical Characterization ◽  
Band Edge ◽  
Band Edge Emission ◽  
High Grade ◽  
Edge Emission ◽  
High Quality ◽  
Strong Band

A high-grade cubic ZnS substrate crystal with longer range order and a strong band-edge emission was clearly demonstrated.

scholarly journals Electrical and optical properties of transition metal dichalcogenides on talc dielectrics

Nanoscale ◽  
2021 ◽  
Author(s):  
Darren Nutting ◽  
Gabriela Augusta Prando ◽  
Marion Severijnen ◽  
Ingrid Barcelos ◽  
Shi Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Defect Density ◽  
Transition Metal Dichalcogenides ◽  
Dielectric Materials ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Metal Dichalcogenides ◽  
Vdw Heterostructure ◽  
Heterostructure Devices

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth...

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