A Novel Organosiloxane Vapor Annealing Process for Improving Elastic Modulus of Porous Low-k Films

2004 ◽  
Vol 812 ◽  
Author(s):  
Kazuo Kohmura ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Hirofumi Tanaka ◽  
Syozo Takada ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Mechanical Strength ◽  
Porous Silica ◽  
Thermal Desorption Spectroscopy ◽  
Silica Film ◽  
Low Dielectric ◽  
Porous Silica Film ◽  
Vapor Annealing ◽  
Ft Ir ◽  
Low K

AbstractA novel organosiloxane-vapor-annealing method has been developed for improving the mechanical strength of porous silica films with a low dielectric constant. Treatment of a porous silica film with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) under atmospheric nitrogen above 350 °C significantly enhanced the mechanical strength (i.e., elastic modulus and hardness) of the film. Results of Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectroscopy (TDS) suggested the formation of cross-linked poly(TMCTS) network on the porous silica internal wall surfaces by the TMCTS treatment. Such TMCTS cross-linked network is thought to enhance the mechanical strength of the low-k film.

scholarly journals The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

2007 ◽  
Vol 515 (18) ◽  
pp. 7275-7280 ◽  
Author(s):  
Jen-Tsung Luo ◽  
Wen-Fa Wu ◽  
Hua-Chiang Wen ◽  
Ben-Zu Wan ◽  
Yu-Ming Chang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Thermal Treatment ◽  
Porous Silica ◽  
Silica Film ◽  
Low Dielectric Constant ◽  
Hydrophobic Group ◽  
Low Dielectric ◽  
Porous Silica Film

Effect of Plasma Treatment and TMCTS Vapor Annealing on the Reinforcement of Porous low-k Films

2005 ◽  
Vol 863 ◽  
Author(s):  
Kazuo Kohmura ◽  
Hirofumi Tanaka ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Tetsuo Ono ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Plasma Treatment ◽  
Polymer Network ◽  
Porous Silica ◽  
Argon Plasma ◽  
Silica Films ◽  
Oh Groups ◽  
Vapor Annealing ◽  
Silica Wall ◽  
Low K

AbstractA novel process of TMCTS vapor annealing combined with a plasma treatment has been developed for improving the mechanical strength of porous silica films having ultralow dielectric constant. When porous silica films annealed under 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor were treated with argon plasma and then re-treated with TMCTS vapor, the mechanical strength (i.e., elastic modulus, hardness) of the films increased significantly. Results of Fourier transform infrared spectroscopy (FT-IR) suggested an accelerative effect resulted from the plasma treatment on the conversion of Si-CH3 and Si-H groups to Si-OH groups. The latter group appears to react faster with TMCTS from the second annealing to form cross-linked polymer network on the porous silica wall surfaces. The resulting cross-linked network is thought to keep the low permittivity and enhance the mechanical strength of the low-k films.

Structure control of periodic porous silica film for low-k application

2002 ◽  
Author(s):  
Kazuhiro Yamada ◽  
Yoshiaki Oku ◽  
Nobuhiro Hata ◽  
Shozo Takada ◽  
Takamaro Kikkawa
Keyword(s):  
Porous Silica ◽  
Silica Film ◽  
Structure Control ◽  
Porous Silica Film ◽  
Low K

Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film

2019 ◽  
Vol 58 (2) ◽  
pp. 021003
Author(s):  
Tadashi Sato ◽  
Shin-Ichiro Kuroki ◽  
Yutaka Seino ◽  
Yasuhisa Kayaba ◽  
Takamaro Kikkawa
Keyword(s):  
Porous Silica ◽  
Crosslinking Density ◽  
Silica Film ◽  
Porous Silica Film ◽  
Low K

Comparative Studies of Ultra Low-κ Porous Silica Films with 2-D Hexagonal and Disordered Pore Structures

2004 ◽  
Vol 812 ◽  
Author(s):  
Nobutoshi Fujii ◽  
Kazuhiro Yamada ◽  
Yoshiaki Oku ◽  
Nobuhiro Hata ◽  
Yutaka Seino ◽  
...  
Keyword(s):  
Pore Structure ◽  
Nonionic Surfactants ◽  
Porous Silica ◽  
Silica Film ◽  
X Ray Diffraction ◽  
Silica Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Porous Silica Film ◽  
Diffraction Peaks

AbstractPeriodic 2-dimensional (2-D) hexagonal and the disordered pore structure silica films have been developed using nonionic surfactants as the templates. The pore structure was controlled by the static electrical interaction between the micelle of the surfactant and the silica oligomer. No X-ray diffraction peaks were observed for the disordered mesoporous silica films, while the pore diameters of 2.0-4.0 nm could be measured by small angle X-ray scattering spectroscopy. By comparing the properties of the 2-D hexagonal and the disordered porous silica films which have the same porosity, it is found that the disordered porous silica film has advantages in terms of the dielectric constant and Young's modulus as well as the hardness. The disordered porous silica film is more suitable for the interlayer dielectrics for ULSI.

Gas-Sensitive Optical Absorption of Ultrafine Silver Particles Dispersed in a Porous Silica Film

1988 ◽  
Vol 27 (Part 2, No. 2) ◽  
pp. L164-L166 ◽  
Author(s):  
Akihisa Yanase ◽  
Hiroshi Komiyama ◽  
Kazunobu Tanaka
Keyword(s):  
Optical Absorption ◽  
Porous Silica ◽  
Silica Film ◽  
Silver Particles ◽  
Porous Silica Film

A novel fabrication of meso-porous silica film by sol-gol of TEOS

2004 ◽  
Vol 5 (4) ◽  
pp. 422-427 ◽  
Author(s):  
Ming-zhi Yin ◽  
Xi Yao ◽  
Liang-ying Zhang
Keyword(s):  
Porous Silica ◽  
Silica Film ◽  
Porous Silica Film

Low-K Porous Spin-On-Glass

1999 ◽  
Vol 565 ◽  
Author(s):  
Paul A. Kohl ◽  
Agnes Padovani ◽  
Michael Wedlake ◽  
Dhananjay Bhusari ◽  
Sue Ann ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Elevated Temperatures ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Decomposition Products ◽  
Air Gaps ◽  
Low Dielectric ◽  
Polymer Decomposition ◽  
Low K ◽  
By Products

AbstractPreviously, the fabrication of air-gap structures for electrical interconnections was demonstrated using a sacrificial polymer encapsulated in conventional dielectric materials. The air-gaps were formed by thermally decomposing the sacrificial polymer and allowing the by-products to diffuse through the encapsulating dielectric. The diffusivity of the polymer decomposition products is adequate at elevated temperatures to allow the formation of air-gaps. This process was extended to form low dielectric constant, porous silica from commercially available methylsilsesquioxane (MSQ) by the addition of the sacrificial polymer to the MSQ. The porous MSQ film was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ appeared to exhibit a closed-pore structure.

Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film

2002 ◽  
Vol 716 ◽  
Author(s):  
Yoshiaki Oku ◽  
Norikazu Nishiyama ◽  
Shunsuke Tanaka ◽  
Korekazu Ueyama ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Structural Stability ◽  
Silicate Glass ◽  
Porous Silica ◽  
Silica Film ◽  
Peak Position ◽  
Nanoporous Silica ◽  
High Structural Stability ◽  
Low K

AbstractWe have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10>∼20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILeak (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILeak) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz.

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