Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film

2002 ◽  
Vol 716 ◽  
Author(s):  
Yoshiaki Oku ◽  
Norikazu Nishiyama ◽  
Shunsuke Tanaka ◽  
Korekazu Ueyama ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Structural Stability ◽  
Silicate Glass ◽  
Porous Silica ◽  
Silica Film ◽  
Peak Position ◽  
Nanoporous Silica ◽  
High Structural Stability ◽  
Low K

AbstractWe have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10>∼20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILeak (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILeak) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

scholarly journals The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

2007 ◽  
Vol 515 (18) ◽  
pp. 7275-7280 ◽  
Author(s):  
Jen-Tsung Luo ◽  
Wen-Fa Wu ◽  
Hua-Chiang Wen ◽  
Ben-Zu Wan ◽  
Yu-Ming Chang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Thermal Treatment ◽  
Porous Silica ◽  
Silica Film ◽  
Low Dielectric Constant ◽  
Hydrophobic Group ◽  
Low Dielectric ◽  
Porous Silica Film

Low-K Porous Spin-On-Glass

1999 ◽  
Vol 565 ◽  
Author(s):  
Paul A. Kohl ◽  
Agnes Padovani ◽  
Michael Wedlake ◽  
Dhananjay Bhusari ◽  
Sue Ann ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Elevated Temperatures ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Decomposition Products ◽  
Air Gaps ◽  
Low Dielectric ◽  
Polymer Decomposition ◽  
Low K ◽  
By Products

AbstractPreviously, the fabrication of air-gap structures for electrical interconnections was demonstrated using a sacrificial polymer encapsulated in conventional dielectric materials. The air-gaps were formed by thermally decomposing the sacrificial polymer and allowing the by-products to diffuse through the encapsulating dielectric. The diffusivity of the polymer decomposition products is adequate at elevated temperatures to allow the formation of air-gaps. This process was extended to form low dielectric constant, porous silica from commercially available methylsilsesquioxane (MSQ) by the addition of the sacrificial polymer to the MSQ. The porous MSQ film was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ appeared to exhibit a closed-pore structure.

scholarly journals The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4827
Author(s):  
Nianmin Hong ◽  
Yinong Zhang ◽  
Quan Sun ◽  
Wenjie Fan ◽  
Menglu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Data Storage ◽  
Integrated Circuit ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Interlayer Dielectric ◽  
Damascene Process ◽  
Key Issues ◽  
Deposition Processes ◽  
Low K

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

Nanoporous Silica Films Derived from Structural Controllable Poly(silsesquioxane) Oligomers by Templating

2003 ◽  
Vol 766 ◽  
Author(s):  
Wei-Chih Liu ◽  
Yang-Yen Yu ◽  
Wen-Chang Chen
Keyword(s):  
Molecular Weight ◽  
Dielectric Constant ◽  
Silica Film ◽  
Current Approach ◽  
Reduced Form ◽  
Nanoporous Silica ◽  
Hydrogen Silsesquioxane ◽  
Silica Films ◽  
Low Dielectric ◽  
Oh Content

AbstractIn this study, nanoporous silica films were prepared from the poly(hydrogen silsesquioxane)(HSSQ) and a templating agent. Three different kinds of the HSSQ with different molecular weight and Si-OH end group content were prepared through the variation of the water/triethoxysilane ratio or pH. The templaing agent for generating nanopore was triphenylsilanol (TPS). The experimental results of refractive index, dielectric constant, and FE-SEM supported the formation of the nano-size pores in the prepared silica films. The dielectric constant of the prepared nanoporous thin films could be reduced form 2.89 (porosity: 12%) to 1.85 (porosity: 58%) by increasing the added TPS. The surface roughness of the prepared nanoporous silica film in comparison with the film thickness was less than 1%. For successful generating small and uniform nanopore in the film, low molecular weight or high Si-OH content of the prepared HSSQ would be required. The current approach is useful for preparing new kinds of low dielectric constant materials.

Structure control of periodic porous silica film for low-k application

2002 ◽  
Author(s):  
Kazuhiro Yamada ◽  
Yoshiaki Oku ◽  
Nobuhiro Hata ◽  
Shozo Takada ◽  
Takamaro Kikkawa
Keyword(s):  
Porous Silica ◽  
Silica Film ◽  
Structure Control ◽  
Porous Silica Film ◽  
Low K

A Novel Organosiloxane Vapor Annealing Process for Improving Elastic Modulus of Porous Low-k Films

2004 ◽  
Vol 812 ◽  
Author(s):  
Kazuo Kohmura ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Hirofumi Tanaka ◽  
Syozo Takada ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Mechanical Strength ◽  
Porous Silica ◽  
Thermal Desorption Spectroscopy ◽  
Silica Film ◽  
Low Dielectric ◽  
Porous Silica Film ◽  
Vapor Annealing ◽  
Ft Ir ◽  
Low K

AbstractA novel organosiloxane-vapor-annealing method has been developed for improving the mechanical strength of porous silica films with a low dielectric constant. Treatment of a porous silica film with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) under atmospheric nitrogen above 350 °C significantly enhanced the mechanical strength (i.e., elastic modulus and hardness) of the film. Results of Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectroscopy (TDS) suggested the formation of cross-linked poly(TMCTS) network on the porous silica internal wall surfaces by the TMCTS treatment. Such TMCTS cross-linked network is thought to enhance the mechanical strength of the low-k film.

Nanoindentation Measurements on Low-k Porous Silica Thin Films Spin Coated on Silicon Substrates

2003 ◽  
Vol 125 (4) ◽  
pp. 361-367 ◽  
Author(s):  
Xiaoqin Huang ◽  
Assimina A. Pelegri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Young’S Modulus ◽  
Microelectromechanical Systems ◽  
Young's Modulus ◽  
Porous Silica ◽  
Silicon Substrates ◽  
Silica Thin Films ◽  
Low K

MEMS (MicroElectroMechanical Systems) are composed of thin films and composite nanomaterials. Although the mechanical properties of their constituent materials play an important role in controlling their quality, reliability, and lifetime, they are often found to be different from their bulk counterparts. In this paper, low-k porous silica thin films spin coated on silicon substrates are studied. The roughness of spin-on coated porous silica films is analyzed with in-situ imaging and their mechanical properties are determined using nanoindentation. A Berkovich type nanoindenter, of a 142.3 deg total included angle, is used and continuous measurements of force and displacements are acquired. It is shown, that the measured results of hardness and Young’s modulus of these films depend on penetration depth. Furthermore, the film’s mechanical properties are influenced by the properties of the substrate, and the reproduction of the force versus displacement curves depends on the quality of the thin film. The hardness of the studied low-k spin coated silica thin film is measured as 0.35∼0.41 GPa and the Young’s modulus is determined as 2.74∼2.94 GPa.

Synthesis of Ordered Nanoporous Silica Film With High Structural Stability

2002 ◽  
Vol 716 ◽  
Author(s):  
Norikazu Nishiyama ◽  
Shunsuke Tanaka ◽  
Yoshiyuki Egashira ◽  
Yoshiaki Oku ◽  
Akira Kamisawa ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Structural Stability ◽  
Silicon Substrate ◽  
Condensation Reaction ◽  
Silica Film ◽  
Silica Network ◽  
Sem Image ◽  
High Structural Stability ◽  
Mesoporous Silica Film ◽  
Silica Wall

AbstractA mesoporous silica film was prepared on a silicon substrate using a spin-coating process followed by a tetraethyl orthosilicate (TEOS) vapor treatment. The stability of a formed silica network before TEOS treatment is thought to be insufficient because the rate of the condensation reaction is not high at temperatures below 453 K. The density of silica wall surrounding surfactant assembly could be low, resulting in the structural contraction with the formation of a silica network. On the other hand, the TEOS-treated mesoporous silica film did not contract during calcination, showing high structural stability. In the TEOS treatment, TEOS molecules penetrate into an originally deposited silicate film and react with silanol groups. The densified silica wall has high structural stability and hardly contracts under a calcination process. A flat mesoporous silica film about 250 nm thick was grown from the silicon substrate. A periodic hexagonal porous structure was observed in the FE-SEM image of the cross section of the TEOS-treated film. This indicates that the channels run predominantly parallel to the surface of the silicon substrate. The developed film is a promising material such as chemical sensors, low-k films and other optoelectronic devices.

Photo-Induced Growth of Low Dielectric Constant Porous Silica Film at Room Temperature

2000 ◽  
Vol 612 ◽  
Author(s):  
Jun-Ying Zhang ◽  
Ian W. Boyd
Keyword(s):  
Dielectric Constant ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Porous Silica ◽  
Silica Film ◽  
Electrical Measurements ◽  
Processing Times ◽  
Low Dielectric ◽  
Stretching Vibration

AbstractWe report low temperature (25-200°C) photo-assisted sol-gel processing for the formation of porous silicon dioxide films on Si (100) substrates using 172 nm radiation from an excimer lamp. The effects of substrate temperature and irriadation time on the properties of the films formed have been studied using ellipsometry, Fourier transform infrared spectroscopy (FTIR), and electrical measurements. The FTIR spectra revealed the presence of a Si-O-Si stretching vibration peak at 1070 cm-1 after UV irradiation at 200°C. This is similar to that recorded for oxides grown by thermally oxidation of silicon at temperatures between 600-1000°C. Capacitance measurements indicated that the dielectric constant values of the films, found to be between 1.7-3.3, strongly depended on the substrate temperature during irradiation. Dielectric constant values as low as 1.7 were readily achievable at room temperature. These results show that the photochemical induced effects initiated by the UV radiation enable both reduced processing times and reduced processing temperatures to be used.

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