Fabrication and Initial Characterization of 600 V 4H-SiC RESURF-type JFETs

2004 ◽  
Vol 815 ◽  
Author(s):  
Satoshi Hatsukawa ◽  
Michitomo Iiyama ◽  
Kazuhiro Fujikawa ◽  
Atsushi Ito
Keyword(s):  
Breakdown Voltage ◽  
Gate Voltage ◽  
Drift Region ◽  
Saturation Current ◽  
Source Areas ◽  
Drift Length ◽  
Initial Characterization ◽  
Suitable Structure ◽  
Hybrid Automobile

AbstractA RESURF-type JFET is a suitable structure as a lateral switching device with a breakdown voltage of above 600 V for an inverter module which drives motors of an electric or hybrid automobile. In this study, 600 V RESURF-type JFETs were fabricated to investigate the operation and characteristics. The drift region between the drain and the source areas has a double RESURF structure to reduce the on-resistance. At first, small devices were fabricated. The width and length of the channel are 200 μm and 10 μm, respectively. The distance between the drain and the gate areas, which is the drift length, is 15 μm. The saturation current normally-off device is about 0.6 mA at a gate voltage of 3 V. The specific on-resistance is about 160mωcm2. The maximum breakdown voltage is 720 V. Next, large ones were fabricated. The width of the channel is 80 mm. The saturation current normally-on device is about 0.5 A at a gate voltage of 2 V. The specific on-resistance is about 200mωcm2. The maximum breakdown voltage is 250 V.

scholarly journals Identification and initial characterization of POLIII-driven transcripts by msRNA-sequencing.

RNA Biology ◽  
2021 ◽  
Author(s):  
Peter Zorn ◽  
Danny Misiak ◽  
Michael Gekle ◽  
Marcel Köhn
Keyword(s):  
Initial Characterization

scholarly journals Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5287
Author(s):  
Hiwa Mahmoudi ◽  
Michael Hofbauer ◽  
Bernhard Goll ◽  
Horst Zimmermann
Keyword(s):  
Breakdown Voltage ◽  
Single Photon ◽  
Photon Counting ◽  
Low Noise ◽  
Dark Count ◽  
Fully Integrated ◽  
Trade Offs ◽  
And Performance ◽  
Noise Models

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.

Isolation and initial characterization of a vasa homolog in Cynops cyanurus

2021 ◽  
Vol 40 ◽  
pp. 119180
Author(s):  
Yinjiao Zhao ◽  
Pingfan Wei ◽  
Dan Wang ◽  
Wenrui Han ◽  
Hanyu Mao ◽  
...  
Keyword(s):  
Initial Characterization

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

scholarly journals Purification and initial characterization of the proteasome from the higher plant Spinacia oleracea.

1992 ◽  
Vol 267 (30) ◽  
pp. 21678-21684 ◽  
Author(s):  
M Ozaki ◽  
K Fujinami ◽  
K Tanaka ◽  
Y Amemiya ◽  
T Sato ◽  
...  
Keyword(s):  
Spinacia Oleracea ◽  
Higher Plant ◽  
Initial Characterization
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