Silicon Nanoparticle Synthesis Using Constricted Mode Capacitive Silane Plasma

2004 ◽  
Vol 818 ◽  
Author(s):  
A. Bapat ◽  
Ying Dong ◽  
C. R. Perrey ◽  
C. B. Carter ◽  
S.A. Campbell ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Crystalline Silicon ◽  
Experimental Studies ◽  
Particle Diameter ◽  
Single Crystal Silicon ◽  
Geometric Standard Deviation ◽  
Rf Plasma ◽  
Particle Nucleation ◽  
Crystal Silicon

AbstractCrystalline semiconductor nanoparticles are of interest for a variety of electronic and opto-electronic applications. We report experimental studies of the synthesis and characterization of crystalline silicon nanoparticles using a constricted-mode capacitive RF plasma in continua- tion of results reported earlier from an RF inductively coupled plasma [1]. The constricted-mode discharge is based on a thermal plasma instability yielding a high-density plasma filament, which rotates at a high frequency. Silane is dissociated, leading to particle nucleation and growth. Particles are extracted by passing the particle-laden gas through an orifice to form a beam and col- lected by inertial impaction.We are able to reproducibly synthesize highly oriented freestanding single-crystal silicon nanoparticles. Monodisperse particle size distributions centered at a 35nm particle diameter with a geometric standard deviation of 1.3 are obtained. Transmission electron microscope (TEM) studies show uniformly shaped cubic particles. Selected-area electron diffraction patterns indi- cate the particles have the diamond-cubic silicon structure. To study the electrical properties of these particles, metal-semiconductor-metal structures were fabricated and analyzed.

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

Synthesis of Crystalline Silicon Nanoparticles in Low-Pressure Inductive Plasmas

2002 ◽  
Vol 737 ◽  
Author(s):  
Ameya Bapat ◽  
Uwe Kortshagen ◽  
Stephen A. Campbell ◽  
Christopher R. Perrey ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Nanoparticles ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Low Pressure Plasma ◽  
Energy Conversion Devices

ABSTRACTAmorphous silicon has been used for a wide variety of electronic applications including thin film transistors and energy conversion devices. However, these devices suffer greatly from defect scattering and recombination. A method for depositing crystalline silicon would be highly desirable, especially if it can be remotely created and deposited on any kind of substrate. Our work aims at synthesis and deposition of mono-disperse, single crystal silicon nanoparticles, several tens of nm in diameter on varied substrates. Synthesis of nanocrystals of 2–10 nm diameter has been previously reported but larger particles were amorphous or polycrystalline. This work reports the use of an inductively coupled low-pressure plasma to produce nanocrystals with diameters between 20–80 nm. Electron microscopy studies confirm that the nanocrystals are highly oriented diamond-cubic silicon.

scholarly journals Single-crystal silicon nanoparticles: An instability to check their synthesis

2006 ◽  
Vol 89 (1) ◽  
pp. 013107 ◽  
Author(s):  
M. Cavarroc ◽  
M. Mikikian ◽  
G. Perrier ◽  
L. Boufendi
Keyword(s):  
Single Crystal ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Investigation of Photoelectron Properties of Polymer Films with Silicon Nanoparticles

Surfaces ◽  
2019 ◽  
Vol 2 (2) ◽  
pp. 387-394 ◽  
Author(s):  
Elizaveta A. Konstantinova ◽  
Alexander S. Vorontsov ◽  
Pavel A. Forsh
Keyword(s):  
Single Crystal ◽  
Silicon Nanoparticles ◽  
Electrochemical Etching ◽  
Nonequilibrium Charge Carrier ◽  
Electric Energy ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Paramagnetic Resonance ◽  
Carrier Separation ◽  
Electron Paramagnetic

Hybrid samples consisting of polymer poly-3(hexylthiophene) (P3HT) and silicon nanoparticles were prepared. It was found that the obtained samples were polymer matrixes with conglomerates of silicon nanoparticles of different sizes (10–104 nm). It was found that, under illumination, the process of nonequilibrium charge carrier separation between the silicon nanoparticles and P3HT with subsequent localization of the hole in the polymer can be successfully detected using electron paramagnetic resonance (EPR) spectroscopy. It was established that the main type of paramagnetic centers in P3HT/silicon nanoparticles are positive polarons in P3HT. For comparison, samples consisting only of polymer and silicon nanoparticles were also investigated by the EPR technique. The polarons in the P3HT and Pb centers in the silicon nanoparticles were observed. The possibility of the conversion of solar energy into electric energy is shown using structures consisting of P3HT polymer and silicon nanoparticles prepared by different methods, including the electrochemical etching of a silicon single crystal in hydrofluoric acid solution and the laser ablation of single-crystal silicon in organic solvents. The results can be useful for solar cell development.

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

From the Casimir Limit to Phononic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-Insulator Technology

2013 ◽  
Vol 135 (6) ◽  
Author(s):  
Amy M. Marconnet ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Phonon Dispersion ◽  
Single Crystal Silicon ◽  
Phonon Transport ◽  
Silicon On Insulator ◽  
Boundary Scattering ◽  
Porous Films ◽  
Crystal Silicon ◽  
20 Nm

Silicon-on-insulator (SOI) technology has sparked advances in semiconductor and MEMs manufacturing and revolutionized our ability to study phonon transport phenomena by providing single-crystal silicon layers with thickness down to a few tens of nanometers. These nearly perfect crystalline silicon layers are an ideal platform for studying ballistic phonon transport and the coupling of boundary scattering with other mechanisms, including impurities and periodic pores. Early studies showed clear evidence of the size effect on thermal conduction due to phonon boundary scattering in films down to 20 nm thick and provided the first compelling room temperature evidence for the Casimir limit at room temperature. More recent studies on ultrathin films and periodically porous thin films are exploring the possibility of phonon dispersion modifications in confined geometries and porous films.

High surface area silicon materials: fundamentals and new technology

2005 ◽  
Vol 364 (1838) ◽  
pp. 217-225 ◽  
Author(s):  
Jillian M Buriak
Keyword(s):  
Porous Silicon ◽  
Molecular Electronics ◽  
Silicon Nanoparticles ◽  
Crystalline Silicon ◽  
High Surface ◽  
Visible Region ◽  
Nanocrystalline Silicon ◽  
Nanoelectromechanical Systems ◽  
Crystal Silicon ◽  
Silicon Based

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Generation of SI Nanoparticles Using Plasma Technology for Novel Device and Energy Storage Application

2007 ◽  
Author(s):  
Kwangsu Kim ◽  
Yonghyun Cho ◽  
Youngjin Kim ◽  
Taesung Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Film Formation ◽  
Spherical Shape ◽  
Plasma Technology ◽  
Energy Devices ◽  
Novel Device ◽  
Si Nanoparticles

Silicon nanoparticles are widely studied as a building block for various applications. M. L. Ostraat et al.[1] and S. Koliopoulou et al.[2] studied NFGM (nano floating gate memory), and S. Oda[3] studied electron characteristics of Si nanoparticles. H. Shirai et al.[4] studied optical characteristics of crystalline silicon nanoparticles. In addition, silicon nanoparticles can be applied for energy devices such as 2nd generation battery. In this paper, we investigated the generation of Si nanoparticles using pulse plasma technology. An inductively-coupled plasma chamber with RF power (13.56 MHz) was designed for this study. DC-bias was applied between the substrate and grounded grid installed above the substrate to increase the particle collection efficiency and to avoid film formation on the substrate. Moreover, in order to control the structure of silicon nanoparticle, we implemented heater inside the substrate. Experiments were performed with various pulse periods to generate nanoparticles with various sizes. Transmission electron microscopy (TEM) was used to measure the shape, structure and size of nanoparticles. TEM images showed that the generated nanoparticles have spherical shape with highly monodisperse size distribution. The structure is originally amorphous but we could change its structure to crystal by annealing. We employed a widely used plasma technology, so we except that it can be easily applied to industry with small modification.

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