X-Ray Double Crystal Topography of Processed Silicon Wafers
Keyword(s):
X Ray
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ABSTRACTDouble crystal topographs of a processed silicon device wafer, taken in highly asymmetric reflection conditions using synchrotron radiation are presented. By using a variety of wavelengths and reflections the depth and distribution of defects generated by the fabrication process are explored. Examples of several reflections are given, with a spatial resolution of better than 5 microns and extremely high device and defect visibility. Results suggest that a high mismatch of lattice parameter at device edges leads to the formation of dislocation loops penetrating junctions.
1995 ◽
Vol 66
(2)
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pp. 1754-1756
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2003 ◽
Vol 36
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pp. 1230-1235
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2018 ◽
Vol 74
(6)
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pp. 673-680
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1998 ◽
Vol 5
(3)
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pp. 239-245
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2005 ◽
Vol 61
(3)
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pp. 301-313
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Philosophical Transactions of the Royal Society of London Series A Physical and Engineering Sciences
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1991 ◽
Vol 337
(1648)
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pp. 497-520
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