δ-Nb-doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr, Ti)O3 by Metal Organic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Osamu Matsuura ◽  
Hideki Yamawaki ◽  
Masaki Nakabayashi ◽  
Yoshimasa Horii ◽  
Yoshihiro Sugiyama
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Doping Effect ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Positive Direction ◽  
Metal Organic ◽  
Nb Doping ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe studied the Nb doping effect on the electrical characteristics of MOCVD-PZT capacitors using uniformly Nb-doped Pb(Zr, Ti)O3 (UND-PZT) and δ-Nb-doped PZT (DND-PZT) prepared by MOCVD. The 2Pr for UND-PZT was small and the UND-PZT hysteresis shifted in a positive direction. However, the 2Pr for DND-PZT decreased by only 5.5% and the hysteresis of DND-PZT didn't shift. In addition, the leakage current of DND-PZT decreased by one order at low bias compared to non-doped PZT, because the δ-Nb-doping layer maintains the barrier height, higher than that of none-doped PZT due to defect compensation. As a result, Nb1% DND-PZT was well suited to use Nb doping which decreases leakage current at low voltage and maintains 2Pr.

Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

2009 ◽  
Vol 517 (6) ◽  
pp. 1868-1873 ◽  
Author(s):  
Y. Rozier ◽  
B. Gautier ◽  
G. Hyvert ◽  
A. Descamps ◽  
C. Plossu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Characteristics of SnOx-ZnO Composite Film on Poly Ethylene Terephalate (PET) Substrate Prepared by ECR-MOCVD

2007 ◽  
Vol 26-28 ◽  
pp. 515-518 ◽  
Author(s):  
Ji Hun Park ◽  
Dong Jin Byun ◽  
Joong Kee Lee
Keyword(s):  
Electron Cyclotron Resonance ◽  
High Mobility ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Metal Organic ◽  
Poly Ethylene ◽  
Polyethylene Terephthalate Substrate ◽  
Organic Chemical Vapor Deposition ◽  
Stability Effect

Zinc oxide and tin oxide (ZnSnOx) films on PET (Polyethylene Terephthalate) substrate were prepared by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) under an hydrogen, oxygen and argon atmosphere. The used tin and zinc precursor are TMT (tetramethyltin) and DEZn(diethylzinc), respectively. The metal (Zinc and Tin) oxidation content plays an important role to control the optical and electrical characteristics of the films. Therefore the optimum DEZn/TMT content can be determined by the counter stability effect between oxidation and zinc-tin deposition. The obtained ZnSnOx (or SnOx-ZnO) of high mobility films exhibited c.a. 7.0×10-3 ohm ·cm of electrical resistivity.

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