Morphology and Microstructure Evolution of Multilayer Au/Cr/Si Thin Films Subject to Annealing

2004 ◽  
Vol 854 ◽  
Author(s):  
David Miller ◽  
Cari Herrmann ◽  
Hans Maier ◽  
Steve George ◽  
Conrad Stoldt ◽  
...  

ABSTRACTAu/Cr/Si microcantilevers were studied in their as-deposited condition and annealed state, with emphasis on a thermal treatment of 225 °C for 24 hours. Change in beam curvature was monitored during isothermal hold as a function of time. Secondary grain growth was observed in the gold, which contained non-uniformly distributed twins and dislocation defects. Diffusional transport of the chromium layer was observed during annealing. Nodules arranged in the “rolling hill” topography were observed at the free surface, both before and after annealing. Nanometer thick coatings of alumina grown by atomic layer deposition improved the uniformity of both microstructure evolution and curvature evolution during high-temperature annealing.

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1795
Author(s):  
Wook Kim ◽  
Sumaira Yasmeen ◽  
Chi Thang Nguyen ◽  
Han-Bo-Ram Lee ◽  
Dukhyun Choi

Humid conditions can disrupt the triboelectric signal generation and reduce the accuracy of triboelectric mechanical sensors. This study demonstrates a novel design approach using atomic layer deposition (ALD) to enhance the humidity resistance of triboelectric mechanical sensors. Titanium oxide (TiOx) was deposited on polytetrafluoroethylene (PTFE) film as a moisture passivation layer. To determine the effective ALD process cycle, the TiOx layer was deposited with 100 to 2000 process cycles. The triboelectric behavior and surface chemical bonding states were analyzed before and after moisture exposure. The ALD-TiOx-deposited PTFE showed three times greater humidity stability than pristine PTFE film. Based on the characterization of TiOx on PTFE film, the passivation mechanism was proposed, and it was related to the role of the oxygen-deficient sites in the TiOx layer. This study could provide a novel way to design stable triboelectric mechanical sensors in highly humid environments.


2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer

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